188 GHz doped-channel In0.8Ga0.2P/In0.53Ga0.47As/InP HFETs

Z. Tang, H. Hsia, H. C. Kuo, D. Caruth, G. E. Stillman, M. Feng

Research output: Contribution to journalArticle


The authors have fabricated 0.14 μm T-gate, doped-channel In0.8Ga0.2P/In0.53Ga0.47As/InP HFETs. An extrinsic peak transconductance of 722 mS/mm and a maximum current density of 761 mA/mm were obtained. The doped-channel HFET exhibits excellent RF performance with fT = 188 GHz and fmax = 225 GHz at Vds = 1.5 V. These are state-of-the-art results for doped-channel HFETs, and are comparable to the best reported performance of InP p-HEMTs with similar gate length.

Original languageEnglish (US)
Pages (from-to)1657-1659
Number of pages3
JournalElectronics Letters
Issue number19
StatePublished - Jan 1 2000

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Tang, Z., Hsia, H., Kuo, H. C., Caruth, D., Stillman, G. E., & Feng, M. (2000). 188 GHz doped-channel In0.8Ga0.2P/In0.53Ga0.47As/InP HFETs. Electronics Letters, 36(19), 1657-1659. https://doi.org/10.1049/el:20001170