188 GHz doped-channel In0.8Ga0.2P/In0.53Ga0.47As/InP HFETs

Z. Tang, H. Hsia, H. C. Kuo, D. Caruth, G. E. Stillman, M. Feng

Research output: Contribution to journalArticle

Abstract

The authors have fabricated 0.14 μm T-gate, doped-channel In0.8Ga0.2P/In0.53Ga0.47As/InP HFETs. An extrinsic peak transconductance of 722 mS/mm and a maximum current density of 761 mA/mm were obtained. The doped-channel HFET exhibits excellent RF performance with fT = 188 GHz and fmax = 225 GHz at Vds = 1.5 V. These are state-of-the-art results for doped-channel HFETs, and are comparable to the best reported performance of InP p-HEMTs with similar gate length.

Original languageEnglish (US)
Pages (from-to)1657-1659
Number of pages3
JournalElectronics Letters
Volume36
Issue number19
DOIs
StatePublished - Jan 1 2000

Fingerprint

Transconductance
High electron mobility transistors
Current density

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Tang, Z., Hsia, H., Kuo, H. C., Caruth, D., Stillman, G. E., & Feng, M. (2000). 188 GHz doped-channel In0.8Ga0.2P/In0.53Ga0.47As/InP HFETs. Electronics Letters, 36(19), 1657-1659. https://doi.org/10.1049/el:20001170

188 GHz doped-channel In0.8Ga0.2P/In0.53Ga0.47As/InP HFETs. / Tang, Z.; Hsia, H.; Kuo, H. C.; Caruth, D.; Stillman, G. E.; Feng, M.

In: Electronics Letters, Vol. 36, No. 19, 01.01.2000, p. 1657-1659.

Research output: Contribution to journalArticle

Tang, Z, Hsia, H, Kuo, HC, Caruth, D, Stillman, GE & Feng, M 2000, '188 GHz doped-channel In0.8Ga0.2P/In0.53Ga0.47As/InP HFETs', Electronics Letters, vol. 36, no. 19, pp. 1657-1659. https://doi.org/10.1049/el:20001170
Tang Z, Hsia H, Kuo HC, Caruth D, Stillman GE, Feng M. 188 GHz doped-channel In0.8Ga0.2P/In0.53Ga0.47As/InP HFETs. Electronics Letters. 2000 Jan 1;36(19):1657-1659. https://doi.org/10.1049/el:20001170
Tang, Z. ; Hsia, H. ; Kuo, H. C. ; Caruth, D. ; Stillman, G. E. ; Feng, M. / 188 GHz doped-channel In0.8Ga0.2P/In0.53Ga0.47As/InP HFETs. In: Electronics Letters. 2000 ; Vol. 36, No. 19. pp. 1657-1659.
@article{046fbdf106514ad9877e44cc29003cfa,
title = "188 GHz doped-channel In0.8Ga0.2P/In0.53Ga0.47As/InP HFETs",
abstract = "The authors have fabricated 0.14 μm T-gate, doped-channel In0.8Ga0.2P/In0.53Ga0.47As/InP HFETs. An extrinsic peak transconductance of 722 mS/mm and a maximum current density of 761 mA/mm were obtained. The doped-channel HFET exhibits excellent RF performance with fT = 188 GHz and fmax = 225 GHz at Vds = 1.5 V. These are state-of-the-art results for doped-channel HFETs, and are comparable to the best reported performance of InP p-HEMTs with similar gate length.",
author = "Z. Tang and H. Hsia and Kuo, {H. C.} and D. Caruth and Stillman, {G. E.} and M. Feng",
year = "2000",
month = "1",
day = "1",
doi = "10.1049/el:20001170",
language = "English (US)",
volume = "36",
pages = "1657--1659",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology",
number = "19",

}

TY - JOUR

T1 - 188 GHz doped-channel In0.8Ga0.2P/In0.53Ga0.47As/InP HFETs

AU - Tang, Z.

AU - Hsia, H.

AU - Kuo, H. C.

AU - Caruth, D.

AU - Stillman, G. E.

AU - Feng, M.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - The authors have fabricated 0.14 μm T-gate, doped-channel In0.8Ga0.2P/In0.53Ga0.47As/InP HFETs. An extrinsic peak transconductance of 722 mS/mm and a maximum current density of 761 mA/mm were obtained. The doped-channel HFET exhibits excellent RF performance with fT = 188 GHz and fmax = 225 GHz at Vds = 1.5 V. These are state-of-the-art results for doped-channel HFETs, and are comparable to the best reported performance of InP p-HEMTs with similar gate length.

AB - The authors have fabricated 0.14 μm T-gate, doped-channel In0.8Ga0.2P/In0.53Ga0.47As/InP HFETs. An extrinsic peak transconductance of 722 mS/mm and a maximum current density of 761 mA/mm were obtained. The doped-channel HFET exhibits excellent RF performance with fT = 188 GHz and fmax = 225 GHz at Vds = 1.5 V. These are state-of-the-art results for doped-channel HFETs, and are comparable to the best reported performance of InP p-HEMTs with similar gate length.

UR - http://www.scopus.com/inward/record.url?scp=0034648559&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034648559&partnerID=8YFLogxK

U2 - 10.1049/el:20001170

DO - 10.1049/el:20001170

M3 - Article

AN - SCOPUS:0034648559

VL - 36

SP - 1657

EP - 1659

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 19

ER -