188 GHz doped-channel In0.8Ga0.2P/In0.53Ga0.47As/InP HFETs

Z. Tang; H. Hsia; H. C. Kuo; D. Caruth; G. E. Stillman; M. Feng

doi:10.1049/el:20001170

188 GHz doped-channel In_0.8Ga_0.2P/In_0.53Ga_0.47As/InP HFETs

Z. Tang, H. Hsia, H. C. Kuo, D. Caruth, G. E. Stillman, M. Feng

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The authors have fabricated 0.14 μm T-gate, doped-channel In_0.8Ga_0.2P/In_0.53Ga_0.47As/InP HFETs. An extrinsic peak transconductance of 722 mS/mm and a maximum current density of 761 mA/mm were obtained. The doped-channel HFET exhibits excellent RF performance with f_T = 188 GHz and f_max = 225 GHz at V_ds = 1.5 V. These are state-of-the-art results for doped-channel HFETs, and are comparable to the best reported performance of InP p-HEMTs with similar gate length.

Original language	English (US)
Pages (from-to)	1657-1659
Number of pages	3
Journal	Electronics Letters
Volume	36
Issue number	19
DOIs	https://doi.org/10.1049/el:20001170
State	Published - 2000

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:20001170

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Cite this

@article{046fbdf106514ad9877e44cc29003cfa,

title = "188 GHz doped-channel In0.8Ga0.2P/In0.53Ga0.47As/InP HFETs",

abstract = "The authors have fabricated 0.14 μm T-gate, doped-channel In0.8Ga0.2P/In0.53Ga0.47As/InP HFETs. An extrinsic peak transconductance of 722 mS/mm and a maximum current density of 761 mA/mm were obtained. The doped-channel HFET exhibits excellent RF performance with fT = 188 GHz and fmax = 225 GHz at Vds = 1.5 V. These are state-of-the-art results for doped-channel HFETs, and are comparable to the best reported performance of InP p-HEMTs with similar gate length.",

author = "Z. Tang and H. Hsia and Kuo, {H. C.} and D. Caruth and Stillman, {G. E.} and M. Feng",

year = "2000",

doi = "10.1049/el:20001170",

language = "English (US)",

volume = "36",

pages = "1657--1659",

journal = "Electronics Letters",

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TY - JOUR

T1 - 188 GHz doped-channel In0.8Ga0.2P/In0.53Ga0.47As/InP HFETs

AU - Tang, Z.

AU - Hsia, H.

AU - Kuo, H. C.

AU - Caruth, D.

AU - Stillman, G. E.

AU - Feng, M.

PY - 2000

Y1 - 2000

N2 - The authors have fabricated 0.14 μm T-gate, doped-channel In0.8Ga0.2P/In0.53Ga0.47As/InP HFETs. An extrinsic peak transconductance of 722 mS/mm and a maximum current density of 761 mA/mm were obtained. The doped-channel HFET exhibits excellent RF performance with fT = 188 GHz and fmax = 225 GHz at Vds = 1.5 V. These are state-of-the-art results for doped-channel HFETs, and are comparable to the best reported performance of InP p-HEMTs with similar gate length.

AB - The authors have fabricated 0.14 μm T-gate, doped-channel In0.8Ga0.2P/In0.53Ga0.47As/InP HFETs. An extrinsic peak transconductance of 722 mS/mm and a maximum current density of 761 mA/mm were obtained. The doped-channel HFET exhibits excellent RF performance with fT = 188 GHz and fmax = 225 GHz at Vds = 1.5 V. These are state-of-the-art results for doped-channel HFETs, and are comparable to the best reported performance of InP p-HEMTs with similar gate length.

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