170 Volt polysilicon-emitter complementary bipolar IC technology with full dielectric isolation

Joel M. McGregor, Wipawan Yindeepol, Joe DeSantis, Kevin C. Brown, Rashid Bashir, William McKeown

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A high-speed, high-voltage polysilicon-emitter complementary bipolar IC process is described. Process features include >170 V NPN and PNP BVceo, dielectric isolation using a bonded wafer substrate and deep trenches, polysilicon resistors, polysilicon to metal capacitors, and a two-level metal back end.

Original languageEnglish (US)
Title of host publicationProceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
Editors Anon
PublisherIEEE
Pages183-186
Number of pages4
StatePublished - 1997
Externally publishedYes
EventProceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting - Minneapolis, MN, USA
Duration: Sep 28 1997Sep 30 1997

Other

OtherProceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting
CityMinneapolis, MN, USA
Period9/28/979/30/97

Fingerprint

Polysilicon
Metals
Resistors
Capacitors
Electric potential
Substrates

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

McGregor, J. M., Yindeepol, W., DeSantis, J., Brown, K. C., Bashir, R., & McKeown, W. (1997). 170 Volt polysilicon-emitter complementary bipolar IC technology with full dielectric isolation. In Anon (Ed.), Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting (pp. 183-186). IEEE.

170 Volt polysilicon-emitter complementary bipolar IC technology with full dielectric isolation. / McGregor, Joel M.; Yindeepol, Wipawan; DeSantis, Joe; Brown, Kevin C.; Bashir, Rashid; McKeown, William.

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting. ed. / Anon. IEEE, 1997. p. 183-186.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

McGregor, JM, Yindeepol, W, DeSantis, J, Brown, KC, Bashir, R & McKeown, W 1997, 170 Volt polysilicon-emitter complementary bipolar IC technology with full dielectric isolation. in Anon (ed.), Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting. IEEE, pp. 183-186, Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting, Minneapolis, MN, USA, 9/28/97.
McGregor JM, Yindeepol W, DeSantis J, Brown KC, Bashir R, McKeown W. 170 Volt polysilicon-emitter complementary bipolar IC technology with full dielectric isolation. In Anon, editor, Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting. IEEE. 1997. p. 183-186
McGregor, Joel M. ; Yindeepol, Wipawan ; DeSantis, Joe ; Brown, Kevin C. ; Bashir, Rashid ; McKeown, William. / 170 Volt polysilicon-emitter complementary bipolar IC technology with full dielectric isolation. Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting. editor / Anon. IEEE, 1997. pp. 183-186
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