16.8%-Efficient n + /p GaAs Solar Cells on Si with High Short-Circuit Current Density

Shizhao Fan, Daehwan Jung, Yukun Sun, Brian D. Li, Diego Martin-Martin, Minjoo Lawrence Lee

Research output: Contribution to journalArticle

Abstract

The highest efficiency heteroepitaxial GaAs solar cells on Si have historically been grown in the p + /n polarity, which was preferred due to the decreased sensitivity of open-circuit voltage in such cells to threading dislocations. The n + /p polarity also has potential advantages due to the higher mobility of electrons than holes in GaAs, and most multi-junction solar cells in the literature are grown in this polarity. Here, we demonstrate n + /p GaAs solar cells on Si with a certified AM1.5G efficiency of 16.8%, approaching the best certified efficiency of 18.1% for p + /n cells in the literature. The high efficiency of our n + /p cells is primarily due to the short-circuit current density of 26.5 mA/cm 2 , which is significantly higher than prior p + /n record cells. The strong carrier collection results from the use of a highly transparent AlInP window layer, thin n + emitter, and a relatively high minority electron diffusion length in the p-type base. The high quantum efficiency of these n + /p cells at wavelengths of 700-880 nm makes them promising for future triple-junction devices on Si, where the GaAs will serve as a middle sub-cell.

Original languageEnglish (US)
Article number8638510
Pages (from-to)660-665
Number of pages6
JournalIEEE Journal of Photovoltaics
Volume9
Issue number3
DOIs
StatePublished - May 2019

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short circuit currents
Short circuit currents
Solar cells
Current density
solar cells
current density
Electrons
Open circuit voltage
cells
Quantum efficiency
polarity
Wavelength
electron diffusion
minorities
diffusion length
open circuit voltage
gallium arsenide
quantum efficiency
emitters
sensitivity

Keywords

  • GaAs on Si
  • III-V on silicon
  • molecular beam epitaxy (MBE)
  • n+/p cells

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

16.8%-Efficient n + /p GaAs Solar Cells on Si with High Short-Circuit Current Density . / Fan, Shizhao; Jung, Daehwan; Sun, Yukun; Li, Brian D.; Martin-Martin, Diego; Lee, Minjoo Lawrence.

In: IEEE Journal of Photovoltaics, Vol. 9, No. 3, 8638510, 05.2019, p. 660-665.

Research output: Contribution to journalArticle

Fan, Shizhao ; Jung, Daehwan ; Sun, Yukun ; Li, Brian D. ; Martin-Martin, Diego ; Lee, Minjoo Lawrence. / 16.8%-Efficient n + /p GaAs Solar Cells on Si with High Short-Circuit Current Density In: IEEE Journal of Photovoltaics. 2019 ; Vol. 9, No. 3. pp. 660-665.
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