Abstract
We are developing two-dimensional 16×25 pixel detector arrays of both unstressed and stressed Ge:Ga photoconductive detectors for far-infrared astronomy from SOFIA. The arrays, based on earlier 5×5 detector arrays used on the KAO, will be for our new instrument, the Far Infrared Field Imaging Line Spectrometer (FIFI LS). The unstressed Ge:Ga detector array will cover the wavelength range from 40 to 120 μm, and the stressed Ge:Ga detector array from 120 to 210 μm. The detector arrays will be operated with multiplexed integrating amplifiers with cryogenic readout electronics located close to the detector arrays. The design of the stressed detector array and results of current measurements on several prototype 16 pixel linear arrays will be reported. They demonstrate the feasibility of the current concept.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 156-163 |
| Number of pages | 8 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 4014 |
| State | Published - 2000 |
| Externally published | Yes |
| Event | Airborne Telescope Systems - Munich, Ger Duration: Mar 27 2000 → Mar 28 2000 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering