@inproceedings{95c48ac1c87d41d2989bbffabe6d1b8a,
title = "1.55 mm GaInNAsSb lasers on GaAs",
abstract = "We present a 1.55 mm laser grown on GaAs by molecular beam epitaxy. The active layer was a single GaInNAsSb quantum well surrounded by strain-compensating GaNAs barriers. The room temperature threshold current density was 2.4 kA/cm2, lasing at 1.553 mm.",
author = "Bank, {S. R.} and Wistey, {M. A.} and Goddard, {L. L.} and Yuen, {H. B.} and Bae, {H. P.} and Harris, {J. S.}",
year = "2005",
language = "English (US)",
isbn = "1557527709",
series = "Optics InfoBase Conference Papers",
publisher = "Optical Society of America",
booktitle = "Conference on Lasers and Electro-Optics, CLEO 2005",
note = "Conference on Lasers and Electro-Optics, CLEO 2005 ; Conference date: 22-05-2005 Through 22-05-2005",
}