1.55 mm GaInNAsSb lasers on GaAs

S. R. Bank, M. A. Wistey, L. L. Goddard, H. B. Yuen, H. P. Bae, J. S. Harris

Research output: Chapter in Book/Report/Conference proceedingConference contribution


We present a 1.55 mm laser grown on GaAs by molecular beam epitaxy. The active layer was a single GaInNAsSb quantum well surrounded by strain-compensating GaNAs barriers. The room temperature threshold current density was 2.4 kA/cm2, lasing at 1.553 mm.

Original languageEnglish (US)
Title of host publicationConference on Lasers and Electro-Optics, CLEO 2005
PublisherOptical Society of America
ISBN (Print)1557527709, 9781557527707
StatePublished - 2005
Externally publishedYes
EventConference on Lasers and Electro-Optics, CLEO 2005 - Baltimore, MD, United States
Duration: May 22 2005May 22 2005

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701


OtherConference on Lasers and Electro-Optics, CLEO 2005
Country/TerritoryUnited States
CityBaltimore, MD

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics


Dive into the research topics of '1.55 mm GaInNAsSb lasers on GaAs'. Together they form a unique fingerprint.

Cite this