@inproceedings{91dca1313784443389e52e7f2891d11f,
title = "1.55 μm GaInNAsSb lasers on GaAs",
abstract = "We present a 1.55 μm laser grown on GaAs by molecular beam epitaxy. The active layer was a single GaInNAsSb quantum well surrounded by strain-compensating GaNAs barriers. The room temperature threshold current density was 2.4 kA/cm 2, lasing at 1.553 μm.",
author = "Bank, {S. R.} and Wistey, {M. A.} and Goddard, {L. L.} and Yuen, {H. B.} and Bae, {H. P.} and Harris, {J. S.}",
year = "2005",
language = "English (US)",
isbn = "1557527954",
series = "2005 Conference on Lasers and Electro-Optics, CLEO",
pages = "89--91",
booktitle = "2005 Conference on Lasers and Electro-Optics, CLEO",
note = "2005 Conference on Lasers and Electro-Optics, CLEO ; Conference date: 22-05-2005 Through 27-05-2005",
}