1.55 μm GaInNAsSb lasers on GaAs

S. R. Bank, M. A. Wistey, L. L. Goddard, H. B. Yuen, H. P. Bae, J. S. Harris

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present a 1.55 μm laser grown on GaAs by molecular beam epitaxy. The active layer was a single GaInNAsSb quantum well surrounded by strain-compensating GaNAs barriers. The room temperature threshold current density was 2.4 kA/cm 2, lasing at 1.553 μm.

Original languageEnglish (US)
Title of host publication2005 Conference on Lasers and Electro-Optics, CLEO
Pages89-91
Number of pages3
StatePublished - Dec 1 2005
Externally publishedYes
Event2005 Conference on Lasers and Electro-Optics, CLEO - Baltimore, MD, United States
Duration: May 22 2005May 27 2005

Publication series

Name2005 Conference on Lasers and Electro-Optics, CLEO
Volume1

Other

Other2005 Conference on Lasers and Electro-Optics, CLEO
CountryUnited States
CityBaltimore, MD
Period5/22/055/27/05

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Bank, S. R., Wistey, M. A., Goddard, L. L., Yuen, H. B., Bae, H. P., & Harris, J. S. (2005). 1.55 μm GaInNAsSb lasers on GaAs. In 2005 Conference on Lasers and Electro-Optics, CLEO (pp. 89-91). [CMF2] (2005 Conference on Lasers and Electro-Optics, CLEO; Vol. 1).