1.55-μm asymmetric fabry-pérot modulator (AFPM) for high-speed applications

Jian Jang Huang; Theodore Chung; Maytee Lerttamrab; Shun Lien Chuang; Milton Feng

doi:10.1109/LPT.2002.804673

1.55-μm asymmetric fabry-pérot modulator (AFPM) for high-speed applications

Jian Jang Huang, Theodore Chung, Maytee Lerttamrab, Shun Lien Chuang, Milton Feng

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We explored the possibility of using an aysmmetric Fabry-Pérot modulator (AFPM) for the application of high-speed external optical modulation at 1.55 μm. Using ten pairs of AlGaInAs-AlInAs as the bottom distributed Bragg mirror (DBR) and semiconductor-air interface as the top mirror, we demonstrated an AFPM with a 3-dB frequency response around 20 GHz and a dc extinction ratio of 4 dB at a reverse bias voltage of 0-5 V (and sharp extinction ratio drop from 0 to 2 V) at operating wavelength 1.55 μm. With a multiple quantum-well intrinsic region of 900 nm, which consists of 50 pairs of InGaAs-InAlAs (8-10 nm), the modulator has the potential for high-frequency applications.

Original language	English (US)
Pages (from-to)	1689-1691
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	14
Issue number	12
DOIs	https://doi.org/10.1109/LPT.2002.804673
State	Published - Dec 2002

Keywords

Asymmetric Fabry-Pérot modulator (AFPM)
Electroabsorption (EA) modulator
Extinction ratio
Frequency response
Multiple quantum well (MQW)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Online availability

10.1109/LPT.2002.804673

Library availability

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title = "1.55-μm asymmetric fabry-p{\'e}rot modulator (AFPM) for high-speed applications",

abstract = "We explored the possibility of using an aysmmetric Fabry-P{\'e}rot modulator (AFPM) for the application of high-speed external optical modulation at 1.55 μm. Using ten pairs of AlGaInAs-AlInAs as the bottom distributed Bragg mirror (DBR) and semiconductor-air interface as the top mirror, we demonstrated an AFPM with a 3-dB frequency response around 20 GHz and a dc extinction ratio of 4 dB at a reverse bias voltage of 0-5 V (and sharp extinction ratio drop from 0 to 2 V) at operating wavelength 1.55 μm. With a multiple quantum-well intrinsic region of 900 nm, which consists of 50 pairs of InGaAs-InAlAs (8-10 nm), the modulator has the potential for high-frequency applications.",

keywords = "Asymmetric Fabry-P{\'e}rot modulator (AFPM), Electroabsorption (EA) modulator, Extinction ratio, Frequency response, Multiple quantum well (MQW)",

author = "Huang, {Jian Jang} and Theodore Chung and Maytee Lerttamrab and Chuang, {Shun Lien} and Milton Feng",

note = "Funding Information: Manuscript received May 14, 2002; revised September 4, 2002. This work was supported under DARPA BOSS Program MDA 972-00-1-0020 and DARPA-VLSI Photonic Program, DAAG55-98-1-0303. The authors are with the Department of Electrical and Computer Engineering, The University of Illinois at Urbana-Champaign, Urbana, IL 61801 USA (e-mail: jianjang.huang@wj.com). Digital Object Identifier 10.1109/LPT.2002.804673 Fig. 1. Layer structure of an asymmetric Fabry–P{\'e}rot MQW modulator on top of a DBR reflector.",

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AU - Feng, Milton

N1 - Funding Information: Manuscript received May 14, 2002; revised September 4, 2002. This work was supported under DARPA BOSS Program MDA 972-00-1-0020 and DARPA-VLSI Photonic Program, DAAG55-98-1-0303. The authors are with the Department of Electrical and Computer Engineering, The University of Illinois at Urbana-Champaign, Urbana, IL 61801 USA (e-mail: jianjang.huang@wj.com). Digital Object Identifier 10.1109/LPT.2002.804673 Fig. 1. Layer structure of an asymmetric Fabry–Pérot MQW modulator on top of a DBR reflector.

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N2 - We explored the possibility of using an aysmmetric Fabry-Pérot modulator (AFPM) for the application of high-speed external optical modulation at 1.55 μm. Using ten pairs of AlGaInAs-AlInAs as the bottom distributed Bragg mirror (DBR) and semiconductor-air interface as the top mirror, we demonstrated an AFPM with a 3-dB frequency response around 20 GHz and a dc extinction ratio of 4 dB at a reverse bias voltage of 0-5 V (and sharp extinction ratio drop from 0 to 2 V) at operating wavelength 1.55 μm. With a multiple quantum-well intrinsic region of 900 nm, which consists of 50 pairs of InGaAs-InAlAs (8-10 nm), the modulator has the potential for high-frequency applications.

AB - We explored the possibility of using an aysmmetric Fabry-Pérot modulator (AFPM) for the application of high-speed external optical modulation at 1.55 μm. Using ten pairs of AlGaInAs-AlInAs as the bottom distributed Bragg mirror (DBR) and semiconductor-air interface as the top mirror, we demonstrated an AFPM with a 3-dB frequency response around 20 GHz and a dc extinction ratio of 4 dB at a reverse bias voltage of 0-5 V (and sharp extinction ratio drop from 0 to 2 V) at operating wavelength 1.55 μm. With a multiple quantum-well intrinsic region of 900 nm, which consists of 50 pairs of InGaAs-InAlAs (8-10 nm), the modulator has the potential for high-frequency applications.

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KW - Multiple quantum well (MQW)

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1.55-μm asymmetric fabry-pérot modulator (AFPM) for high-speed applications

Abstract

Keywords

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