1.55-μm asymmetric fabry-pérot modulator (AFPM) for high-speed applications

Jian Jang Huang, Theodore Chung, Maytee Lerttamrab, Shun Lien Chuang, Milton Feng

Research output: Contribution to journalArticlepeer-review

Abstract

We explored the possibility of using an aysmmetric Fabry-Pérot modulator (AFPM) for the application of high-speed external optical modulation at 1.55 μm. Using ten pairs of AlGaInAs-AlInAs as the bottom distributed Bragg mirror (DBR) and semiconductor-air interface as the top mirror, we demonstrated an AFPM with a 3-dB frequency response around 20 GHz and a dc extinction ratio of 4 dB at a reverse bias voltage of 0-5 V (and sharp extinction ratio drop from 0 to 2 V) at operating wavelength 1.55 μm. With a multiple quantum-well intrinsic region of 900 nm, which consists of 50 pairs of InGaAs-InAlAs (8-10 nm), the modulator has the potential for high-frequency applications.

Original languageEnglish (US)
Pages (from-to)1689-1691
Number of pages3
JournalIEEE Photonics Technology Letters
Volume14
Issue number12
DOIs
StatePublished - Dec 1 2002

Keywords

  • Asymmetric Fabry-Pérot modulator (AFPM)
  • Electroabsorption (EA) modulator
  • Extinction ratio
  • Frequency response
  • Multiple quantum well (MQW)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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