@inproceedings{b3a5b91f5ac249daa4d0dd4fbe4d0a81,
title = "150 nm InP HBT process with two-level airbridge interconnects and MIM capacitors for sub-millimeter wave research",
abstract = "A 150 nm emitter width HBT fabrication process for devicelevel research is described. Simple passive elements are integrated after device planarization for future demonstration of sub-millimeter wave MMICs.",
keywords = "Heterojunction bipolar transistor, Indium phosphide, MMIC",
author = "William Snodgrass and Mark Stuenkel and Milton Feng",
year = "2009",
language = "English (US)",
isbn = "189358013X",
series = "2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009",
booktitle = "2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009",
note = "2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009 ; Conference date: 18-05-2009 Through 21-05-2009",
}