150 nm InP HBT process with two-level airbridge interconnects and MIM capacitors for sub-millimeter wave research

William Snodgrass, Mark Stuenkel, Milton Feng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A 150 nm emitter width HBT fabrication process for devicelevel research is described. Simple passive elements are integrated after device planarization for future demonstration of sub-millimeter wave MMICs.

Original languageEnglish (US)
Title of host publication2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009
StatePublished - Dec 1 2009
Event2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009 - Tampa, FL, United States
Duration: May 18 2009May 21 2009

Publication series

Name2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009

Other

Other2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009
CountryUnited States
CityTampa, FL
Period5/18/095/21/09

Keywords

  • Heterojunction bipolar transistor
  • Indium phosphide
  • MMIC

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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