Abstract
This paper reports an advance in receiver performance achieved by utilizing very high-performance quarter-micron lattice-matched high-electron mobility transistors and metal-semiconductor-metal photodetectors in the design of a 1.55 μm sensitive high-speed, monolithically integrated lightwave receiver. The lattice-matched vertically integrated layer structure is grown in a single growth run with the FET grown first, followed by the MSM photodetector.
| Original language | English (US) |
|---|---|
| Pages | 70-71 |
| Number of pages | 2 |
| State | Published - 1995 |
| Event | Proceedings of the 1995 53rd Annual Device Research Conference Digest - Charlottesville, VA, USA Duration: Jun 19 1995 → Jun 21 1995 |
Other
| Other | Proceedings of the 1995 53rd Annual Device Research Conference Digest |
|---|---|
| City | Charlottesville, VA, USA |
| Period | 6/19/95 → 6/21/95 |
ASJC Scopus subject areas
- General Engineering