15 GHz bandwidth lattice-matched InAlAs/InGaAs/InP HEMT-based OEIC photoreceiver

P. Fay, W. Wohlmuth, C. Caneau, I. Adesida

Research output: Contribution to conferencePaper

Abstract

This paper reports an advance in receiver performance achieved by utilizing very high-performance quarter-micron lattice-matched high-electron mobility transistors and metal-semiconductor-metal photodetectors in the design of a 1.55 μm sensitive high-speed, monolithically integrated lightwave receiver. The lattice-matched vertically integrated layer structure is grown in a single growth run with the FET grown first, followed by the MSM photodetector.

Original languageEnglish (US)
Pages70-71
Number of pages2
StatePublished - Dec 1 1995
EventProceedings of the 1995 53rd Annual Device Research Conference Digest - Charlottesville, VA, USA
Duration: Jun 19 1995Jun 21 1995

Other

OtherProceedings of the 1995 53rd Annual Device Research Conference Digest
CityCharlottesville, VA, USA
Period6/19/956/21/95

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Fay, P., Wohlmuth, W., Caneau, C., & Adesida, I. (1995). 15 GHz bandwidth lattice-matched InAlAs/InGaAs/InP HEMT-based OEIC photoreceiver. 70-71. Paper presented at Proceedings of the 1995 53rd Annual Device Research Conference Digest, Charlottesville, VA, USA, .