1.5 μm GaInNAs(Sb) lasers grown on GaAs by MBE

Seth Bank, Wonill Ha, Vincent Gambin, Mark Wistey, Homan Yuen, Lynford Goddard, Seongsin Kim, James S. Harris

Research output: Contribution to journalConference article

Abstract

We demonstrate the first 1.5 μm GaInNAsSb laser grown on GaAs. It exhibits much improved threshold current density as compared with previously reported GaInNAs lasers at 1.52 μm. A 1.465 μm laser with far superior performance is also demonstrated. This device exhibits a pulsed threshold current density of 930 A/cm2 per quantum well, a differential quantum efficiency of 0.30 W/A (both facets), an external quantum efficiency of 35%, and peak power above 70 mW. Additionally, the use of antimony allows for a decrease in the bandgap out to 1.6 μm, while still preserving luminescence efficiency as compared to 1.3 μm GaInNAs material.

Original languageEnglish (US)
Pages (from-to)367-371
Number of pages5
JournalJournal of Crystal Growth
Volume251
Issue number1-4
DOIs
StatePublished - Apr 1 2003
Externally publishedYes
EventProceedings of the Molecular Beam Epitaxy 2002 - San Francisco, CA, United States
Duration: Sep 15 2002Sep 20 2002

Keywords

  • A1. Photoluminescence
  • A3. Molecular beam epitaxy
  • A3. Quantum wells
  • B1. Nitride-arsenides
  • B2. Semiconducting quaternary alloys
  • B3. Laser diodes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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  • Cite this

    Bank, S., Ha, W., Gambin, V., Wistey, M., Yuen, H., Goddard, L., Kim, S., & Harris, J. S. (2003). 1.5 μm GaInNAs(Sb) lasers grown on GaAs by MBE. Journal of Crystal Growth, 251(1-4), 367-371. https://doi.org/10.1016/S0022-0248(02)02446-6