1.5 μm GaInNAs(Sb) lasers grown on GaAs by MBE

Seth Bank; Wonill Ha; Vincent Gambin; Mark Wistey; Homan Yuen; Lynford Goddard; Seongsin Kim; James S. Harris

doi:10.1016/S0022-0248(02)02446-6

1.5 μm GaInNAs(Sb) lasers grown on GaAs by MBE

Seth Bank, Wonill Ha, Vincent Gambin, Mark Wistey, Homan Yuen, Lynford Goddard, Seongsin Kim, James S. Harris

Research output: Contribution to journal › Conference article › peer-review

Abstract

We demonstrate the first 1.5 μm GaInNAsSb laser grown on GaAs. It exhibits much improved threshold current density as compared with previously reported GaInNAs lasers at 1.52 μm. A 1.465 μm laser with far superior performance is also demonstrated. This device exhibits a pulsed threshold current density of 930 A/cm² per quantum well, a differential quantum efficiency of 0.30 W/A (both facets), an external quantum efficiency of 35%, and peak power above 70 mW. Additionally, the use of antimony allows for a decrease in the bandgap out to 1.6 μm, while still preserving luminescence efficiency as compared to 1.3 μm GaInNAs material.

Original language	English (US)
Pages (from-to)	367-371
Number of pages	5
Journal	Journal of Crystal Growth
Volume	251
Issue number	1-4
DOIs	https://doi.org/10.1016/S0022-0248(02)02446-6
State	Published - Apr 2003
Externally published	Yes
Event	Proceedings of the Molecular Beam Epitaxy 2002 - San Francisco, CA, United States Duration: Sep 15 2002 → Sep 20 2002

Keywords

A1. Photoluminescence
A3. Molecular beam epitaxy
A3. Quantum wells
B1. Nitride-arsenides
B2. Semiconducting quaternary alloys
B3. Laser diodes

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Online availability

10.1016/S0022-0248(02)02446-6

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title = "1.5 μm GaInNAs(Sb) lasers grown on GaAs by MBE",

abstract = "We demonstrate the first 1.5 μm GaInNAsSb laser grown on GaAs. It exhibits much improved threshold current density as compared with previously reported GaInNAs lasers at 1.52 μm. A 1.465 μm laser with far superior performance is also demonstrated. This device exhibits a pulsed threshold current density of 930 A/cm2 per quantum well, a differential quantum efficiency of 0.30 W/A (both facets), an external quantum efficiency of 35%, and peak power above 70 mW. Additionally, the use of antimony allows for a decrease in the bandgap out to 1.6 μm, while still preserving luminescence efficiency as compared to 1.3 μm GaInNAs material.",

keywords = "A1. Photoluminescence, A3. Molecular beam epitaxy, A3. Quantum wells, B1. Nitride-arsenides, B2. Semiconducting quaternary alloys, B3. Laser diodes",

author = "Seth Bank and Wonill Ha and Vincent Gambin and Mark Wistey and Homan Yuen and Lynford Goddard and Seongsin Kim and Harris, {James S.}",

year = "2003",

month = apr,

doi = "10.1016/S0022-0248(02)02446-6",

language = "English (US)",

volume = "251",

pages = "367--371",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1-4",

note = "Proceedings of the Molecular Beam Epitaxy 2002 ; Conference date: 15-09-2002 Through 20-09-2002",

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TY - JOUR

T1 - 1.5 μm GaInNAs(Sb) lasers grown on GaAs by MBE

AU - Bank, Seth

AU - Ha, Wonill

AU - Gambin, Vincent

AU - Wistey, Mark

AU - Yuen, Homan

AU - Goddard, Lynford

AU - Kim, Seongsin

AU - Harris, James S.

PY - 2003/4

Y1 - 2003/4

N2 - We demonstrate the first 1.5 μm GaInNAsSb laser grown on GaAs. It exhibits much improved threshold current density as compared with previously reported GaInNAs lasers at 1.52 μm. A 1.465 μm laser with far superior performance is also demonstrated. This device exhibits a pulsed threshold current density of 930 A/cm2 per quantum well, a differential quantum efficiency of 0.30 W/A (both facets), an external quantum efficiency of 35%, and peak power above 70 mW. Additionally, the use of antimony allows for a decrease in the bandgap out to 1.6 μm, while still preserving luminescence efficiency as compared to 1.3 μm GaInNAs material.

AB - We demonstrate the first 1.5 μm GaInNAsSb laser grown on GaAs. It exhibits much improved threshold current density as compared with previously reported GaInNAs lasers at 1.52 μm. A 1.465 μm laser with far superior performance is also demonstrated. This device exhibits a pulsed threshold current density of 930 A/cm2 per quantum well, a differential quantum efficiency of 0.30 W/A (both facets), an external quantum efficiency of 35%, and peak power above 70 mW. Additionally, the use of antimony allows for a decrease in the bandgap out to 1.6 μm, while still preserving luminescence efficiency as compared to 1.3 μm GaInNAs material.

KW - A1. Photoluminescence

KW - A3. Molecular beam epitaxy

KW - A3. Quantum wells

KW - B1. Nitride-arsenides

KW - B2. Semiconducting quaternary alloys

KW - B3. Laser diodes

UR - http://www.scopus.com/inward/record.url?scp=0037380529&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037380529&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(02)02446-6

DO - 10.1016/S0022-0248(02)02446-6

M3 - Conference article

AN - SCOPUS:0037380529

SN - 0022-0248

VL - 251

SP - 367

EP - 371

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

T2 - Proceedings of the Molecular Beam Epitaxy 2002

Y2 - 15 September 2002 through 20 September 2002

ER -

1.5 μm GaInNAs(Sb) lasers grown on GaAs by MBE

Abstract

Keywords

ASJC Scopus subject areas

Online availability

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