1.5 μm GaInNAs(Sb) lasers grown on GaAs by MBE

Seth Bank, Wonill Ha, Vincent Gambin, Mark Wistey, Homan Yuen, Lynford Goddard, Seongsin Kim, James S. Harris

Research output: Contribution to journalConference articlepeer-review

Abstract

We demonstrate the first 1.5 μm GaInNAsSb laser grown on GaAs. It exhibits much improved threshold current density as compared with previously reported GaInNAs lasers at 1.52 μm. A 1.465 μm laser with far superior performance is also demonstrated. This device exhibits a pulsed threshold current density of 930 A/cm2 per quantum well, a differential quantum efficiency of 0.30 W/A (both facets), an external quantum efficiency of 35%, and peak power above 70 mW. Additionally, the use of antimony allows for a decrease in the bandgap out to 1.6 μm, while still preserving luminescence efficiency as compared to 1.3 μm GaInNAs material.

Original languageEnglish (US)
Pages (from-to)367-371
Number of pages5
JournalJournal of Crystal Growth
Volume251
Issue number1-4
DOIs
StatePublished - Apr 2003
Externally publishedYes
EventProceedings of the Molecular Beam Epitaxy 2002 - San Francisco, CA, United States
Duration: Sep 15 2002Sep 20 2002

Keywords

  • A1. Photoluminescence
  • A3. Molecular beam epitaxy
  • A3. Quantum wells
  • B1. Nitride-arsenides
  • B2. Semiconducting quaternary alloys
  • B3. Laser diodes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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