1.3 μm Optical Interconnect on Silicon: A Monolithic III-Nitride Nanowire Photonic Integrated Circuit

Keyphrases

• Optical Interconnects 100%
• Photonic Integrated Circuits 100%
• Nanowire Photonics 100%
• III-nitride Nanowires 100%
• Diode Laser 50%
• Epitaxy 50%
• Dielectric Waveguide 50%
• Guided Waves 50%
• Si Wafer 25%
• Wavelength Range 25%
• Nanostructures 25%
• Silica 25%
• Gallium Arsenide 25%
• Fabrication Methods 25%
• Room Temperature 25%
• Electronic Properties 25%
• Emitting Diode 25%
• Edge Emitting 25%
• Silicon Nitride 25%
• Buffer Layer 25%
• Nanowire Arrays 25%
• Epitaxial Growth 25%
• Active Devices 25%
• Quantum Dots 25%
• Optically Pumped 25%
• Si Substrate 25%
• Wafer Bonding 25%
• Photodiode 25%
• Complementary Metal Oxide Semiconductor 25%
• Responsivity 25%
• Electrically Pumped 25%
• Monolithic Integration 25%
• Mode Propagation 25%
• Interconnect via 25%
• Threshold Current 25%
• Selective Area Epitaxy 25%
• Nanowire Heterostructures 25%
• InP-based 25%
• Wave Component 25%
• III-nitrides 25%
• Optical Detectors 25%
• Laser Detector 25%
• Semiconductor chips 25%
• Mode Confinement 25%
• Laser on Silicon 25%
• Nanowire Waveguide 25%
• Dot-like 25%
• Laser Wave 25%

Material Science

• Electronic Circuit 100%
• Silicon 100%
• Nanowire 100%
• Epitaxy 100%
• Nitride Compound 100%
• Waveguide 75%
• Dielectric Material 50%
• Laser Diode 50%
• Nanocrystalline Material 25%
• Gallium Arsenide 25%
• Electronic Property 25%
• Heterojunction 25%
• Buffer Layer 25%
• Quantum Dot 25%
• Silicon Nitride 25%
• Complementary Metal-Oxide-Semiconductor Device 25%

Physics

• Nanowires 100%
• Nitride 100%
• Photonic Integrated Circuits 100%
• Optical Interconnect 100%
• Epitaxy 75%
• Semiconductor Laser 50%
• Dielectric Waveguides 50%
• Waveguide 25%
• Room Temperature 25%
• Quantum Dot 25%
• Heterojunctions 25%
• Photodiode 25%
• Metal Oxide Semiconductor 25%