1.3 μm Optical Interconnect on Silicon: A Monolithic III-Nitride Nanowire Photonic Integrated Circuit

Arnab Hazari, Fu Chen Hsiao, Lifan Yan, Junseok Heo, Joanna Mirecki Millunchick, John M. Dallesasse, Pallab Bhattacharya

Research output: Research - peer-reviewArticle

Abstract

A feasible optical interconnect on a silicon complementary metal-oxide-semiconductor chip demands epitaxial growth and monolithic integration of diode lasers and optical detectors with guided wave components on a (001) Si wafer, with all the components preferably operating in the wavelength range of 1.3-1.55 μm at room temperature. It is also desirable for the fabrication technique to be relatively simple and reproducible. Techniques demonstrated in the past for having optically and electrically pumped GaAs- and InP-based lasers on silicon include wafer bonding, selective area epitaxy, epitaxy on tilted substrates, and use of quantum dot or planar buffer layers. Here, we present a novel monolithic optical interconnect on a (001) Si substrate consisting of a III-nitride dot-in-nanowire array edge emitting diode laser and guided wave photodiode, with a planar SiO2/Si3N4 dielectric waveguide in between. The active devices are realized with the same nanowire heterostructure by one-step epitaxy. The electronic properties of the InN dot-like nanostructures and mode confinement and propagation in the nanowire waveguides have been modeled. The laser, emitting at the desired wavelength of 1.3 μm, with threshold current ∼350 mA for a device of dimension 50 μm × 2 mm, has been characterized in detail. The detector exhibits a responsivity ∼0.1 A/W at 1.3 μm. Operation of the entire optical interconnect via the dielectric waveguide is demonstrated.

LanguageEnglish (US)
Article number7933939
JournalIEEE Journal of Quantum Electronics
Volume53
Issue number4
DOIs
StatePublished - Aug 1 2017

Fingerprint

optical interconnects
epitaxy
nitrides
integrated circuits
nanowires
photonics
silicon
Optical interconnects
Epitaxial growth
Nitrides
Nanowires
Silicon
dielectric waveguides
semiconductor lasers
wafers
detectors
wavelengths
lasers
Dielectric waveguides
Guided electromagnetic wave propagation

Keywords

  • Indium gallium nitride
  • molecular beam epitaxy
  • monolithic photodiodes
  • nanowires
  • near-infrared lasers
  • silicon photonics

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

1.3 μm Optical Interconnect on Silicon : A Monolithic III-Nitride Nanowire Photonic Integrated Circuit. / Hazari, Arnab; Hsiao, Fu Chen; Yan, Lifan; Heo, Junseok; Millunchick, Joanna Mirecki; Dallesasse, John M.; Bhattacharya, Pallab.

In: IEEE Journal of Quantum Electronics, Vol. 53, No. 4, 7933939, 01.08.2017.

Research output: Research - peer-reviewArticle

Hazari, Arnab ; Hsiao, Fu Chen ; Yan, Lifan ; Heo, Junseok ; Millunchick, Joanna Mirecki ; Dallesasse, John M. ; Bhattacharya, Pallab. / 1.3 μm Optical Interconnect on Silicon : A Monolithic III-Nitride Nanowire Photonic Integrated Circuit. In: IEEE Journal of Quantum Electronics. 2017 ; Vol. 53, No. 4.
@article{c92e364b8f4c4c7ea4b85e37adb886c0,
title = "1.3 μm Optical Interconnect on Silicon: A Monolithic III-Nitride Nanowire Photonic Integrated Circuit",
abstract = "A feasible optical interconnect on a silicon complementary metal-oxide-semiconductor chip demands epitaxial growth and monolithic integration of diode lasers and optical detectors with guided wave components on a (001) Si wafer, with all the components preferably operating in the wavelength range of 1.3-1.55 μm at room temperature. It is also desirable for the fabrication technique to be relatively simple and reproducible. Techniques demonstrated in the past for having optically and electrically pumped GaAs- and InP-based lasers on silicon include wafer bonding, selective area epitaxy, epitaxy on tilted substrates, and use of quantum dot or planar buffer layers. Here, we present a novel monolithic optical interconnect on a (001) Si substrate consisting of a III-nitride dot-in-nanowire array edge emitting diode laser and guided wave photodiode, with a planar SiO2/Si3N4 dielectric waveguide in between. The active devices are realized with the same nanowire heterostructure by one-step epitaxy. The electronic properties of the InN dot-like nanostructures and mode confinement and propagation in the nanowire waveguides have been modeled. The laser, emitting at the desired wavelength of 1.3 μm, with threshold current ∼350 mA for a device of dimension 50 μm × 2 mm, has been characterized in detail. The detector exhibits a responsivity ∼0.1 A/W at 1.3 μm. Operation of the entire optical interconnect via the dielectric waveguide is demonstrated.",
keywords = "Indium gallium nitride, molecular beam epitaxy, monolithic photodiodes, nanowires, near-infrared lasers, silicon photonics",
author = "Arnab Hazari and Hsiao, {Fu Chen} and Lifan Yan and Junseok Heo and Millunchick, {Joanna Mirecki} and Dallesasse, {John M.} and Pallab Bhattacharya",
year = "2017",
month = "8",
doi = "10.1109/JQE.2017.2708526",
volume = "53",
journal = "IEEE Journal of Quantum Electronics",
issn = "0018-9197",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "4",

}

TY - JOUR

T1 - 1.3 μm Optical Interconnect on Silicon

T2 - IEEE Journal of Quantum Electronics

AU - Hazari,Arnab

AU - Hsiao,Fu Chen

AU - Yan,Lifan

AU - Heo,Junseok

AU - Millunchick,Joanna Mirecki

AU - Dallesasse,John M.

AU - Bhattacharya,Pallab

PY - 2017/8/1

Y1 - 2017/8/1

N2 - A feasible optical interconnect on a silicon complementary metal-oxide-semiconductor chip demands epitaxial growth and monolithic integration of diode lasers and optical detectors with guided wave components on a (001) Si wafer, with all the components preferably operating in the wavelength range of 1.3-1.55 μm at room temperature. It is also desirable for the fabrication technique to be relatively simple and reproducible. Techniques demonstrated in the past for having optically and electrically pumped GaAs- and InP-based lasers on silicon include wafer bonding, selective area epitaxy, epitaxy on tilted substrates, and use of quantum dot or planar buffer layers. Here, we present a novel monolithic optical interconnect on a (001) Si substrate consisting of a III-nitride dot-in-nanowire array edge emitting diode laser and guided wave photodiode, with a planar SiO2/Si3N4 dielectric waveguide in between. The active devices are realized with the same nanowire heterostructure by one-step epitaxy. The electronic properties of the InN dot-like nanostructures and mode confinement and propagation in the nanowire waveguides have been modeled. The laser, emitting at the desired wavelength of 1.3 μm, with threshold current ∼350 mA for a device of dimension 50 μm × 2 mm, has been characterized in detail. The detector exhibits a responsivity ∼0.1 A/W at 1.3 μm. Operation of the entire optical interconnect via the dielectric waveguide is demonstrated.

AB - A feasible optical interconnect on a silicon complementary metal-oxide-semiconductor chip demands epitaxial growth and monolithic integration of diode lasers and optical detectors with guided wave components on a (001) Si wafer, with all the components preferably operating in the wavelength range of 1.3-1.55 μm at room temperature. It is also desirable for the fabrication technique to be relatively simple and reproducible. Techniques demonstrated in the past for having optically and electrically pumped GaAs- and InP-based lasers on silicon include wafer bonding, selective area epitaxy, epitaxy on tilted substrates, and use of quantum dot or planar buffer layers. Here, we present a novel monolithic optical interconnect on a (001) Si substrate consisting of a III-nitride dot-in-nanowire array edge emitting diode laser and guided wave photodiode, with a planar SiO2/Si3N4 dielectric waveguide in between. The active devices are realized with the same nanowire heterostructure by one-step epitaxy. The electronic properties of the InN dot-like nanostructures and mode confinement and propagation in the nanowire waveguides have been modeled. The laser, emitting at the desired wavelength of 1.3 μm, with threshold current ∼350 mA for a device of dimension 50 μm × 2 mm, has been characterized in detail. The detector exhibits a responsivity ∼0.1 A/W at 1.3 μm. Operation of the entire optical interconnect via the dielectric waveguide is demonstrated.

KW - Indium gallium nitride

KW - molecular beam epitaxy

KW - monolithic photodiodes

KW - nanowires

KW - near-infrared lasers

KW - silicon photonics

UR - http://www.scopus.com/inward/record.url?scp=85028757487&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85028757487&partnerID=8YFLogxK

U2 - 10.1109/JQE.2017.2708526

DO - 10.1109/JQE.2017.2708526

M3 - Article

VL - 53

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

SN - 0018-9197

IS - 4

M1 - 7933939

ER -