1.3 μm InGaAsN quantum well vertical cavity surface emitting lasers on GaAs substrates

J. F. Klem, K. D. Choquette, A. J. Fischer, O. Blum, K. M. Geib, R. L. Naone, D. Galt

Research output: Contribution to journalConference article

Abstract

The strong interest in developing vertical cavity surface emitting lasers (VCSELs) operating at 1.3 μm has driven investigations into a number of materials which emit at that wavelength and can be grown pseudomorphically on GaAs substrate. This article reports characteristics of 1.3 μm electrically pumped InGaAsN quantum well VCSELs grown on GaAs.

Original languageEnglish (US)
Pages (from-to)127-128
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume1
StatePublished - Dec 1 2000
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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