The strong interest in developing vertical cavity surface emitting lasers (VCSELs) operating at 1.3 μm has driven investigations into a number of materials which emit at that wavelength and can be grown pseudomorphically on GaAs substrate. This article reports characteristics of 1.3 μm electrically pumped InGaAsN quantum well VCSELs grown on GaAs.
|Original language||English (US)|
|Number of pages||2|
|Journal||Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS|
|State||Published - Dec 1 2000|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering