(110) InAs quantum dots: Growth, single-dot luminescence and cleaved edge alignment

Daniel M Wasserman, E. A. Shaner, S. A. Lyon, M. Hadjipanayi, A. C. Maciel, J. F. Ryan

Research output: Contribution to journalConference article

Abstract

The formation of InAs self-assembled quantum dots on (110) GaAs substrates is demonstrated. These dots form with significantly lower densities than InAs dots grown on (100) GaAs. The low density growth mode of these InAs nanostructures allows for the fabrication of devices capable of electroluminescence from individual quantum dots. Such a device has been fabricated with conventional photolithography and its emission spectra characterized. Additionally, because GaAs cleaves naturally along the (110) crystal plane, the ability to grow InAs quantum dots on (110) GaAs substrates allows for the growth of these dots on the cleaved edges of GaAs first growth samples containing InGaAs strain layers of varying thickness and In fraction. 100% linear alignment of InAs quantum dots over these InGaAs strain layers is demonstrated.

Original languageEnglish (US)
Article numberB1.5
Pages (from-to)21-32
Number of pages12
JournalMaterials Research Society Symposium Proceedings
Volume829
StatePublished - Jun 20 2005
EventProgress in Compound Semiconductor Materials IV - Electronic and Optoelectronic Applications - Boston, MA, United States
Duration: Nov 29 2004Dec 3 2004

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Wasserman, D. M., Shaner, E. A., Lyon, S. A., Hadjipanayi, M., Maciel, A. C., & Ryan, J. F. (2005). (110) InAs quantum dots: Growth, single-dot luminescence and cleaved edge alignment. Materials Research Society Symposium Proceedings, 829, 21-32. [B1.5].