11 GHz Bandwidth Optical Integrated Receivers Using GaAs MESFET and MSM Technology

J. S. Wang; C. G. Shih; W. H. Chang; J. R. Middleton; P. J. Apostolakis; M. Feng

doi:10.1109/68.205623

11 GHz Bandwidth Optical Integrated Receivers Using GaAs MESFET and MSM Technology

J. S. Wang, C. G. Shih, W. H. Chang, J. R. Middleton, P. J. Apostolakis, M. Feng

Electrical and Computer Engineering

Research output: Contribution to journal › Article

Abstract

We report state-of-the-art performance of GaAs-FET based monolithic optoelectronic integrated circuit (OEIC) receivers. The OEIC receiver achieves -3 dB bandwidth as high as 11 GHz for optical signals at a wavelength of 850 nm. The feedback resistance of the receiver is 1000 Ω, and the effective transimpedance into a 50 Ω load is 565 Ω. The effective transimpedance-bandwidth (TZBW) product is 6.1 THz-Ω. The TZBW and the bandwidth values are the highest reported results for both GaAs FET and HEMT based OEIC receiver. The significant accomplishment of this work is the demonstration of an ultra-high performance receiver, exceeding 10 GHz operation, implemented via a high-yield, low-cost direct ion implanted GaAs MESFET technology with a 0.6 μm gate length and a metal-semiconductor-metal (MSM) detector with 2 μm lines X 3 μm spacings.

Original language	English (US)
Pages (from-to)	316-318
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	5
Issue number	3
DOIs	https://doi.org/10.1109/68.205623
State	Published - Mar 1993

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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Wang, J. S., Shih, C. G., Chang, W. H., Middleton, J. R., Apostolakis, P. J., & Feng, M. (1993). 11 GHz Bandwidth Optical Integrated Receivers Using GaAs MESFET and MSM Technology. IEEE Photonics Technology Letters, 5(3), 316-318. https://doi.org/10.1109/68.205623

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title = "11 GHz Bandwidth Optical Integrated Receivers Using GaAs MESFET and MSM Technology",

abstract = "We report state-of-the-art performance of GaAs-FET based monolithic optoelectronic integrated circuit (OEIC) receivers. The OEIC receiver achieves -3 dB bandwidth as high as 11 GHz for optical signals at a wavelength of 850 nm. The feedback resistance of the receiver is 1000 Ω, and the effective transimpedance into a 50 Ω load is 565 Ω. The effective transimpedance-bandwidth (TZBW) product is 6.1 THz-Ω. The TZBW and the bandwidth values are the highest reported results for both GaAs FET and HEMT based OEIC receiver. The significant accomplishment of this work is the demonstration of an ultra-high performance receiver, exceeding 10 GHz operation, implemented via a high-yield, low-cost direct ion implanted GaAs MESFET technology with a 0.6 μm gate length and a metal-semiconductor-metal (MSM) detector with 2 μm lines X 3 μm spacings.",

author = "Wang, {J. S.} and Shih, {C. G.} and Chang, {W. H.} and Middleton, {J. R.} and Apostolakis, {P. J.} and M. Feng",

year = "1993",

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AU - Wang, J. S.

AU - Shih, C. G.

AU - Chang, W. H.

AU - Middleton, J. R.

AU - Apostolakis, P. J.

AU - Feng, M.

PY - 1993/3

Y1 - 1993/3

N2 - We report state-of-the-art performance of GaAs-FET based monolithic optoelectronic integrated circuit (OEIC) receivers. The OEIC receiver achieves -3 dB bandwidth as high as 11 GHz for optical signals at a wavelength of 850 nm. The feedback resistance of the receiver is 1000 Ω, and the effective transimpedance into a 50 Ω load is 565 Ω. The effective transimpedance-bandwidth (TZBW) product is 6.1 THz-Ω. The TZBW and the bandwidth values are the highest reported results for both GaAs FET and HEMT based OEIC receiver. The significant accomplishment of this work is the demonstration of an ultra-high performance receiver, exceeding 10 GHz operation, implemented via a high-yield, low-cost direct ion implanted GaAs MESFET technology with a 0.6 μm gate length and a metal-semiconductor-metal (MSM) detector with 2 μm lines X 3 μm spacings.

AB - We report state-of-the-art performance of GaAs-FET based monolithic optoelectronic integrated circuit (OEIC) receivers. The OEIC receiver achieves -3 dB bandwidth as high as 11 GHz for optical signals at a wavelength of 850 nm. The feedback resistance of the receiver is 1000 Ω, and the effective transimpedance into a 50 Ω load is 565 Ω. The effective transimpedance-bandwidth (TZBW) product is 6.1 THz-Ω. The TZBW and the bandwidth values are the highest reported results for both GaAs FET and HEMT based OEIC receiver. The significant accomplishment of this work is the demonstration of an ultra-high performance receiver, exceeding 10 GHz operation, implemented via a high-yield, low-cost direct ion implanted GaAs MESFET technology with a 0.6 μm gate length and a metal-semiconductor-metal (MSM) detector with 2 μm lines X 3 μm spacings.

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