We report state-of-the-art performance of GaAs-FET based monolithic optoelectronic integrated circuit (OEIC) receivers. The OEIC receiver achieves -3 dB bandwidth as high as 11 GHz for optical signals at a wavelength of 850 nm. The feedback resistance of the receiver is 1000 Ω, and the effective transimpedance into a 50 Ω load is 565 Ω. The effective transimpedance-bandwidth (TZBW) product is 6.1 THz-Ω. The TZBW and the bandwidth values are the highest reported results for both GaAs FET and HEMT based OEIC receiver. The significant accomplishment of this work is the demonstration of an ultra-high performance receiver, exceeding 10 GHz operation, implemented via a high-yield, low-cost direct ion implanted GaAs MESFET technology with a 0.6 μm gate length and a metal-semiconductor-metal (MSM) detector with 2 μm lines X 3 μm spacings.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering