11 GHz bandwidth GaAs MESFET/MSM OEIC receivers

J. S. Wang, C. G. Shih, W. H. Chang, J. Middleton, P. J. Apostolakis, M. Feng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report state-of-the-art performance of direct ion implanted GaAs-MESFET with a 0.6 μm gate length and MSM based OEIC receiver achieving a-3 dB bandwidth as high as 11 GHz for optical signals at the wavelength of 850 nm. The feedback resistance of the receiver is 1000 Ω and the effective transimpedance is 565 Ω into a 50 Ω load. The effective transimpedance-bandwidth (TZBW) product is 6.1 THz-Ω for this receiver.

Original languageEnglish (US)
Title of host publicationDigest IEEE MTT-S International Symposium Digest
PublisherPubl by IEEE
Pages1047-1050
Number of pages4
ISBN (Print)0780312090
StatePublished - Jan 1 1993
EventProceedings of the 1993 IEEE MTT-S International Symposium on Circuits and Systems, Part 4 (of 4) - Atlanta, GA, USA
Duration: Jun 14 1993Jun 18 1993

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
Volume2
ISSN (Print)0149-645X

Other

OtherProceedings of the 1993 IEEE MTT-S International Symposium on Circuits and Systems, Part 4 (of 4)
CityAtlanta, GA, USA
Period6/14/936/18/93

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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  • Cite this

    Wang, J. S., Shih, C. G., Chang, W. H., Middleton, J., Apostolakis, P. J., & Feng, M. (1993). 11 GHz bandwidth GaAs MESFET/MSM OEIC receivers. In Digest IEEE MTT-S International Symposium Digest (pp. 1047-1050). (IEEE MTT-S International Microwave Symposium Digest; Vol. 2). Publ by IEEE.