@inproceedings{5ae1f1da59904a78bfa71147726037d0,
title = "11 GHz bandwidth GaAs MESFET/MSM OEIC receivers",
abstract = "We report state-of-the-art performance of direct ion implanted GaAs-MESFET with a 0.6 μm gate length and MSM based OEIC receiver achieving a-3 dB bandwidth as high as 11 GHz for optical signals at the wavelength of 850 nm. The feedback resistance of the receiver is 1000 Ω and the effective transimpedance is 565 Ω into a 50 Ω load. The effective transimpedance-bandwidth (TZBW) product is 6.1 THz-Ω for this receiver.",
author = "Wang, {J. S.} and Shih, {C. G.} and Chang, {W. H.} and J. Middleton and Apostolakis, {P. J.} and M. Feng",
year = "1993",
language = "English (US)",
isbn = "0780312090",
series = "IEEE MTT-S International Microwave Symposium Digest",
publisher = "Publ by IEEE",
pages = "1047--1050",
booktitle = "Digest IEEE MTT-S International Symposium Digest",
note = "Proceedings of the 1993 IEEE MTT-S International Symposium on Circuits and Systems, Part 4 (of 4) ; Conference date: 14-06-1993 Through 18-06-1993",
}