10Gbps operation of a metamorphic InGaP buffered in_0.53Ga _0.47As p-i-n photodetector grown on GaAs substrate

Keyphrases

• GaAs Substrate 100%
• InGaP 100%
• P-i-n Photodetector 100%
• 10Gbps 100%
• InGaAs 33%
• Gallium Arsenide 33%
• Buffer Layer 33%
• Optical Power 33%
• Dark Current 33%
• Frequency Response 33%
• Epitaxially Grown 33%
• InGaAlAs 33%
• Linearly Graded 33%
• Ps Pulse 33%
• Aperture Size 33%
• Pulse Train 33%
• Eye Pattern 33%
• PIN Photodiode 33%
• InP Substrate 33%
• Noise Equivalent Power 33%
• Power Bandwidth 33%
• Synchronous Optical NETwork (SONET) 33%
• Receiving Performance 33%
• Top-illuminated 33%
• Optical Responsivity 33%
• Operational Bandwidth 33%

Engineering

• Photodetector 100%
• Gaas Substrate 100%
• Gallium Arsenide 33%
• Indium Gallium Arsenide 33%
• Buffer Layer 33%
• Optical Power 33%
• Photodiode 33%
• Frequency Response 33%
• Data Rate 33%
• Responsivity 33%
• Pulse Train 33%

Material Science

• Gallium Arsenide 100%
• Indium Gallium Arsenide 25%
• Buffer Layer 25%
• Optical Power 25%