Abstract
This paper reports a method to fabricate a 100 nm scale heater-thermometer into a silicon microcantilever based on contact photolithography and a controlled annealing process. The heater is formed during a photolithography process that can achieve a minimum feature size of about 1 μm, while careful control of doping and annealing parameters allows the heater size to be further decreased, to a width of 100 nm. The heater is fabricated onto the free end of a silicon cantilever suitable for scanning probe microscopy, and can be integrated into cantilevers with or without sharp tips. The fabricated heater has a maximum temperature of over 700 °C, and a heating time of 56 μsec to reach 500 °C.
| Original language | English (US) |
|---|---|
| Article number | 4805439 |
| Pages (from-to) | 543-546 |
| Number of pages | 4 |
| Journal | Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS) |
| DOIs | |
| State | Published - 2009 |
| Event | 22nd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2009 - Sorrento, Italy Duration: Jan 25 2009 → Jan 29 2009 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Mechanical Engineering
- Electrical and Electronic Engineering