Abstract

This paper reports a method to fabricate a 100 nm scale heater-thermometer into a silicon microcantilever based on contact photolithography and a controlled annealing process. The heater is formed during a photolithography process that can achieve a minimum feature size of about 1 μm, while careful control of doping and annealing parameters allows the heater size to be further decreased, to a width of 100 nm. The heater is fabricated onto the free end of a silicon cantilever suitable for scanning probe microscopy, and can be integrated into cantilevers with or without sharp tips. The fabricated heater has a maximum temperature of over 700 °C, and a heating time of 56 μsec to reach 500 °C.

Original languageEnglish (US)
Article number4805439
Pages (from-to)543-546
Number of pages4
JournalProceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
DOIs
StatePublished - Jun 1 2009
Event22nd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2009 - Sorrento, Italy
Duration: Jan 25 2009Jan 29 2009

Fingerprint

Thermometers
thermometers
Photolithography
Silicon
heaters
Annealing
Scanning probe microscopy
silicon
photolithography
Doping (additives)
Heating
annealing
Temperature
microscopy
heating
scanning
probes
temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

100 nanometer scale resistive heater-thermometer on a silicon cantilever. / Dai, Zhenting; Park, Keunhan; King, William Paul.

In: Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS), 01.06.2009, p. 543-546.

Research output: Contribution to journalConference article

@article{bff29c03d7244b599ed086fe7912de10,
title = "100 nanometer scale resistive heater-thermometer on a silicon cantilever",
abstract = "This paper reports a method to fabricate a 100 nm scale heater-thermometer into a silicon microcantilever based on contact photolithography and a controlled annealing process. The heater is formed during a photolithography process that can achieve a minimum feature size of about 1 μm, while careful control of doping and annealing parameters allows the heater size to be further decreased, to a width of 100 nm. The heater is fabricated onto the free end of a silicon cantilever suitable for scanning probe microscopy, and can be integrated into cantilevers with or without sharp tips. The fabricated heater has a maximum temperature of over 700 °C, and a heating time of 56 μsec to reach 500 °C.",
author = "Zhenting Dai and Keunhan Park and King, {William Paul}",
year = "2009",
month = "6",
day = "1",
doi = "10.1109/MEMSYS.2009.4805439",
language = "English (US)",
pages = "543--546",
journal = "Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)",
issn = "1084-6999",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - 100 nanometer scale resistive heater-thermometer on a silicon cantilever

AU - Dai, Zhenting

AU - Park, Keunhan

AU - King, William Paul

PY - 2009/6/1

Y1 - 2009/6/1

N2 - This paper reports a method to fabricate a 100 nm scale heater-thermometer into a silicon microcantilever based on contact photolithography and a controlled annealing process. The heater is formed during a photolithography process that can achieve a minimum feature size of about 1 μm, while careful control of doping and annealing parameters allows the heater size to be further decreased, to a width of 100 nm. The heater is fabricated onto the free end of a silicon cantilever suitable for scanning probe microscopy, and can be integrated into cantilevers with or without sharp tips. The fabricated heater has a maximum temperature of over 700 °C, and a heating time of 56 μsec to reach 500 °C.

AB - This paper reports a method to fabricate a 100 nm scale heater-thermometer into a silicon microcantilever based on contact photolithography and a controlled annealing process. The heater is formed during a photolithography process that can achieve a minimum feature size of about 1 μm, while careful control of doping and annealing parameters allows the heater size to be further decreased, to a width of 100 nm. The heater is fabricated onto the free end of a silicon cantilever suitable for scanning probe microscopy, and can be integrated into cantilevers with or without sharp tips. The fabricated heater has a maximum temperature of over 700 °C, and a heating time of 56 μsec to reach 500 °C.

UR - http://www.scopus.com/inward/record.url?scp=65949102118&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=65949102118&partnerID=8YFLogxK

U2 - 10.1109/MEMSYS.2009.4805439

DO - 10.1109/MEMSYS.2009.4805439

M3 - Conference article

AN - SCOPUS:65949102118

SP - 543

EP - 546

JO - Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

JF - Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

SN - 1084-6999

M1 - 4805439

ER -