Type-II InP/GaAsSb double heterojunction bipolar transistors (DBTs) were fabricated and microwave power performance was measured. For an InP collector thickness of 150 nm, the DHBTs show a current gain of 24, low offset voltages, and a BVCEO > 6V. The 1.2 × 16 μm2 devices show fT = 205 GHz and fMAX = 106 GHz at JC = 304 kA/cm2. These devices delivered 12.6 dBm to the load at PAvs = 3.3 dBm operating at 10 GHz yielding a power-added efficiency of 41% and GT = 9.3 dB.
- Heterojunction bipolar transistors (HBTs)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering