10-GHz power performance of a type II InP/GaAsSb DHBT

David C. Caruth, Benjamin F. Chu-Kung, Milton Feng

Research output: Contribution to journalArticlepeer-review

Abstract

Type-II InP/GaAsSb double heterojunction bipolar transistors (DBTs) were fabricated and microwave power performance was measured. For an InP collector thickness of 150 nm, the DHBTs show a current gain of 24, low offset voltages, and a BVCEO > 6V. The 1.2 × 16 μm2 devices show fT = 205 GHz and fMAX = 106 GHz at JC = 304 kA/cm2. These devices delivered 12.6 dBm to the load at PAvs = 3.3 dBm operating at 10 GHz yielding a power-added efficiency of 41% and GT = 9.3 dB.

Original languageEnglish (US)
Pages (from-to)604-606
Number of pages3
JournalIEEE Electron Device Letters
Volume26
Issue number9
DOIs
StatePublished - Sep 1 2005

Keywords

  • Heterojunction bipolar transistors (HBTs)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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