10-GHz power performance of a type II InP/GaAsSb DHBT

David C. Caruth; Benjamin F. Chu-Kung; Milton Feng

doi:10.1109/LED.2005.854355

10-GHz power performance of a type II InP/GaAsSb DHBT

David C. Caruth, Benjamin F. Chu-Kung, Milton Feng

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Type-II InP/GaAsSb double heterojunction bipolar transistors (DBTs) were fabricated and microwave power performance was measured. For an InP collector thickness of 150 nm, the DHBTs show a current gain of 24, low offset voltages, and a BV_CEO > 6V. The 1.2 × 16 μm² devices show f_T = 205 GHz and f_MAX = 106 GHz at J_C = 304 kA/cm². These devices delivered 12.6 dBm to the load at PAvs = 3.3 dBm operating at 10 GHz yielding a power-added efficiency of 41% and G_T = 9.3 dB.

Original language	English (US)
Pages (from-to)	604-606
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	26
Issue number	9
DOIs	https://doi.org/10.1109/LED.2005.854355
State	Published - Sep 2005

Keywords

Heterojunction bipolar transistors (HBTs)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Online availability

10.1109/LED.2005.854355

Library availability

Discover UIUC Full Text

Cite this

@article{554b77ccb5274bd2b5b5e1457bc01aa4,

title = "10-GHz power performance of a type II InP/GaAsSb DHBT",

abstract = "Type-II InP/GaAsSb double heterojunction bipolar transistors (DBTs) were fabricated and microwave power performance was measured. For an InP collector thickness of 150 nm, the DHBTs show a current gain of 24, low offset voltages, and a BVCEO > 6V. The 1.2 × 16 μm2 devices show fT = 205 GHz and fMAX = 106 GHz at JC = 304 kA/cm2. These devices delivered 12.6 dBm to the load at PAvs = 3.3 dBm operating at 10 GHz yielding a power-added efficiency of 41% and GT = 9.3 dB.",

keywords = "Heterojunction bipolar transistors (HBTs)",

author = "Caruth, {David C.} and Chu-Kung, {Benjamin F.} and Milton Feng",

year = "2005",

month = sep,

doi = "10.1109/LED.2005.854355",

language = "English (US)",

volume = "26",

pages = "604--606",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

TY - JOUR

T1 - 10-GHz power performance of a type II InP/GaAsSb DHBT

AU - Caruth, David C.

AU - Chu-Kung, Benjamin F.

AU - Feng, Milton

PY - 2005/9

Y1 - 2005/9

N2 - Type-II InP/GaAsSb double heterojunction bipolar transistors (DBTs) were fabricated and microwave power performance was measured. For an InP collector thickness of 150 nm, the DHBTs show a current gain of 24, low offset voltages, and a BVCEO > 6V. The 1.2 × 16 μm2 devices show fT = 205 GHz and fMAX = 106 GHz at JC = 304 kA/cm2. These devices delivered 12.6 dBm to the load at PAvs = 3.3 dBm operating at 10 GHz yielding a power-added efficiency of 41% and GT = 9.3 dB.

AB - Type-II InP/GaAsSb double heterojunction bipolar transistors (DBTs) were fabricated and microwave power performance was measured. For an InP collector thickness of 150 nm, the DHBTs show a current gain of 24, low offset voltages, and a BVCEO > 6V. The 1.2 × 16 μm2 devices show fT = 205 GHz and fMAX = 106 GHz at JC = 304 kA/cm2. These devices delivered 12.6 dBm to the load at PAvs = 3.3 dBm operating at 10 GHz yielding a power-added efficiency of 41% and GT = 9.3 dB.

KW - Heterojunction bipolar transistors (HBTs)

UR - http://www.scopus.com/inward/record.url?scp=26444538922&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=26444538922&partnerID=8YFLogxK

U2 - 10.1109/LED.2005.854355

DO - 10.1109/LED.2005.854355

M3 - Article

AN - SCOPUS:26444538922

SN - 0741-3106

VL - 26

SP - 604

EP - 606

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 9

ER -

10-GHz power performance of a type II InP/GaAsSb DHBT

Abstract

Keywords

ASJC Scopus subject areas

Online availability

Library availability

Related links

Fingerprint

Cite this