10-Gb/s operation of an In0.53 Ga0.47 As p-i-n photodiode on metamorphic InGaP buffered semi-insulating GaAs substrate

Yu Sheng Liao, Gong Ru Lin, Hao Chung Kuo, Kai Ming Feng, Milton Feng

Research output: Contribution to journalArticle

Abstract

The SONET OC-192 receiving performance of In0.53 Ga0.47As p-i-n photodiode grown on linearly graded metamorphic InxGa1-xP buffered GaAs substrate is reported. With a low-cost TO-46 package, such a device exhibits a frequency bandwidth up to 8 GHz, a bit-error rate (BER) of 10-9 at 10 Gb/s, a sensitivity of -17.8 dBm, and a noise equivalent power of 3.4 × 10-15 W/Hz1/2 owing to its ultralow dark current of 3.6 × 10-7 A/cm2. Eye diagram analysis at 10 Gb/s without transimpedance amplification reveals a statistically distributed Q-factor of 8.21, corresponding to a minimum BER of 1.1 × 10-16 at receiving power of -6 dBm.

Original languageEnglish (US)
Pages (from-to)1822-1824
Number of pages3
JournalIEEE Photonics Technology Letters
Volume18
Issue number17
DOIs
StatePublished - Sep 1 2006

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Keywords

  • Bit-error rate (BER)
  • GaAs
  • InGaAs
  • InGaP
  • Metamorphic
  • OC-192
  • P-i-n photodiode (PINPD)
  • Receiver

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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