10-Gb/s operation of an In0.53 Ga0.47 As p-i-n photodiode on metamorphic InGaP buffered semi-insulating GaAs substrate

Yu Sheng Liao; Gong Ru Lin; Hao Chung Kuo; Kai Ming Feng; Milton Feng

doi:10.1109/LPT.2006.877623

10-Gb/s operation of an In_0.53 Ga_0.47 As p-i-n photodiode on metamorphic InGaP buffered semi-insulating GaAs substrate

Yu Sheng Liao, Gong Ru Lin, Hao Chung Kuo, Kai Ming Feng, Milton Feng

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The SONET OC-192 receiving performance of In_0.53 Ga_0.47As p-i-n photodiode grown on linearly graded metamorphic In_xGa_1-xP buffered GaAs substrate is reported. With a low-cost TO-46 package, such a device exhibits a frequency bandwidth up to 8 GHz, a bit-error rate (BER) of 10^-9 at 10 Gb/s, a sensitivity of -17.8 dBm, and a noise equivalent power of 3.4 × 10^-15 W/Hz^1/2 owing to its ultralow dark current of 3.6 × 10^-7 A/cm². Eye diagram analysis at 10 Gb/s without transimpedance amplification reveals a statistically distributed Q-factor of 8.21, corresponding to a minimum BER of 1.1 × 10^-16 at receiving power of -6 dBm.

Original language	English (US)
Pages (from-to)	1822-1824
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	18
Issue number	17
DOIs	https://doi.org/10.1109/LPT.2006.877623
State	Published - Sep 1 2006

Keywords

Bit-error rate (BER)
GaAs
InGaAs
InGaP
Metamorphic
OC-192
P-i-n photodiode (PINPD)
Receiver

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Online availability

10.1109/LPT.2006.877623

Library availability

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Cite this

@article{80b147e71d0344c083ce274c8043135d,

title = "10-Gb/s operation of an In0.53 Ga0.47 As p-i-n photodiode on metamorphic InGaP buffered semi-insulating GaAs substrate",

abstract = "The SONET OC-192 receiving performance of In0.53 Ga0.47As p-i-n photodiode grown on linearly graded metamorphic InxGa1-xP buffered GaAs substrate is reported. With a low-cost TO-46 package, such a device exhibits a frequency bandwidth up to 8 GHz, a bit-error rate (BER) of 10-9 at 10 Gb/s, a sensitivity of -17.8 dBm, and a noise equivalent power of 3.4 × 10-15 W/Hz1/2 owing to its ultralow dark current of 3.6 × 10-7 A/cm2. Eye diagram analysis at 10 Gb/s without transimpedance amplification reveals a statistically distributed Q-factor of 8.21, corresponding to a minimum BER of 1.1 × 10-16 at receiving power of -6 dBm.",

keywords = "Bit-error rate (BER), GaAs, InGaAs, InGaP, Metamorphic, OC-192, P-i-n photodiode (PINPD), Receiver",

author = "Liao, {Yu Sheng} and Lin, {Gong Ru} and Kuo, {Hao Chung} and Feng, {Kai Ming} and Milton Feng",

note = "Funding Information: Manuscript received October 11, 2005; revised March 20, 2006. This work was supported in part by the National Science Council under Grant NSC94-2215-E-009-040.",

year = "2006",

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doi = "10.1109/LPT.2006.877623",

language = "English (US)",

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T1 - 10-Gb/s operation of an In0.53 Ga0.47 As p-i-n photodiode on metamorphic InGaP buffered semi-insulating GaAs substrate

AU - Liao, Yu Sheng

AU - Lin, Gong Ru

AU - Kuo, Hao Chung

AU - Feng, Kai Ming

AU - Feng, Milton

N1 - Funding Information: Manuscript received October 11, 2005; revised March 20, 2006. This work was supported in part by the National Science Council under Grant NSC94-2215-E-009-040.

PY - 2006/9/1

Y1 - 2006/9/1

N2 - The SONET OC-192 receiving performance of In0.53 Ga0.47As p-i-n photodiode grown on linearly graded metamorphic InxGa1-xP buffered GaAs substrate is reported. With a low-cost TO-46 package, such a device exhibits a frequency bandwidth up to 8 GHz, a bit-error rate (BER) of 10-9 at 10 Gb/s, a sensitivity of -17.8 dBm, and a noise equivalent power of 3.4 × 10-15 W/Hz1/2 owing to its ultralow dark current of 3.6 × 10-7 A/cm2. Eye diagram analysis at 10 Gb/s without transimpedance amplification reveals a statistically distributed Q-factor of 8.21, corresponding to a minimum BER of 1.1 × 10-16 at receiving power of -6 dBm.

AB - The SONET OC-192 receiving performance of In0.53 Ga0.47As p-i-n photodiode grown on linearly graded metamorphic InxGa1-xP buffered GaAs substrate is reported. With a low-cost TO-46 package, such a device exhibits a frequency bandwidth up to 8 GHz, a bit-error rate (BER) of 10-9 at 10 Gb/s, a sensitivity of -17.8 dBm, and a noise equivalent power of 3.4 × 10-15 W/Hz1/2 owing to its ultralow dark current of 3.6 × 10-7 A/cm2. Eye diagram analysis at 10 Gb/s without transimpedance amplification reveals a statistically distributed Q-factor of 8.21, corresponding to a minimum BER of 1.1 × 10-16 at receiving power of -6 dBm.

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KW - Receiver

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