0.5 THz performance of a type-II DHBT with a doping-graded and constant-composition GaAsSb base

Huiming Xu; Barry Wu; Eric W. Iverson; Thomas S. Low; Milton Feng

doi:10.1109/LED.2013.2290299

0.5 THz performance of a type-II DHBT with a doping-graded and constant-composition GaAsSb base

Huiming Xu, Barry Wu, Eric W. Iverson, Thomas S. Low, Milton Feng

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A type-II GaAsSb Double Heterojunction Bipolar Transistor (DHBT) with an AlInP emitter, doping-graded GaAsSb base, and InP collector has been grown by molecular beam epitaxy. The 0.38 μm emitter devices have been fabricated by a triple-mesa wet etch process and demonstrated f_T / f_MAX = 470/540 GHz at J_C = 5.1 mA/μm² and V_CB = 0.65 V. This performance is comparable with compositiongraded base devices with similar emitter width.

Original language	English (US)
Article number	6678780
Pages (from-to)	24-26
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	35
Issue number	1
DOIs	https://doi.org/10.1109/LED.2013.2290299
State	Published - Jan 2014

Keywords

DHBT
GaAsSb
InP
doping graded
millimeter-wave

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2013.2290299

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abstract = "A type-II GaAsSb Double Heterojunction Bipolar Transistor (DHBT) with an AlInP emitter, doping-graded GaAsSb base, and InP collector has been grown by molecular beam epitaxy. The 0.38 μm emitter devices have been fabricated by a triple-mesa wet etch process and demonstrated fT / fMAX = 470/540 GHz at JC = 5.1 mA/μm2 and VCB = 0.65 V. This performance is comparable with compositiongraded base devices with similar emitter width.",

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AU - Iverson, Eric W.

AU - Low, Thomas S.

AU - Feng, Milton

PY - 2014/1

Y1 - 2014/1

N2 - A type-II GaAsSb Double Heterojunction Bipolar Transistor (DHBT) with an AlInP emitter, doping-graded GaAsSb base, and InP collector has been grown by molecular beam epitaxy. The 0.38 μm emitter devices have been fabricated by a triple-mesa wet etch process and demonstrated fT / fMAX = 470/540 GHz at JC = 5.1 mA/μm2 and VCB = 0.65 V. This performance is comparable with compositiongraded base devices with similar emitter width.

AB - A type-II GaAsSb Double Heterojunction Bipolar Transistor (DHBT) with an AlInP emitter, doping-graded GaAsSb base, and InP collector has been grown by molecular beam epitaxy. The 0.38 μm emitter devices have been fabricated by a triple-mesa wet etch process and demonstrated fT / fMAX = 470/540 GHz at JC = 5.1 mA/μm2 and VCB = 0.65 V. This performance is comparable with compositiongraded base devices with similar emitter width.

KW - DHBT

KW - GaAsSb

KW - InP

KW - doping graded

KW - millimeter-wave

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0.5 THz performance of a type-II DHBT with a doping-graded and constant-composition GaAsSb base

Abstract

Keywords

ASJC Scopus subject areas

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