A type-II GaAsSb Double Heterojunction Bipolar Transistor (DHBT) with an AlInP emitter, doping-graded GaAsSb base, and InP collector has been grown by molecular beam epitaxy. The 0.38 μm emitter devices have been fabricated by a triple-mesa wet etch process and demonstrated fT / fMAX = 470/540 GHz at JC = 5.1 mA/μm2 and VCB = 0.65 V. This performance is comparable with compositiongraded base devices with similar emitter width.
- doping graded
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering