0.5 THz performance of a type-II DHBT with a doping-graded and constant-composition GaAsSb base

Huiming Xu, Barry Wu, Eric W. Iverson, Thomas S. Low, Milton Feng

Research output: Contribution to journalArticle

Abstract

A type-II GaAsSb Double Heterojunction Bipolar Transistor (DHBT) with an AlInP emitter, doping-graded GaAsSb base, and InP collector has been grown by molecular beam epitaxy. The 0.38 μm emitter devices have been fabricated by a triple-mesa wet etch process and demonstrated fT / fMAX = 470/540 GHz at JC = 5.1 mA/μm2 and VCB = 0.65 V. This performance is comparable with compositiongraded base devices with similar emitter width.

Original languageEnglish (US)
Article number6678780
Pages (from-to)24-26
Number of pages3
JournalIEEE Electron Device Letters
Volume35
Issue number1
DOIs
StatePublished - Jan 1 2014

Keywords

  • DHBT
  • GaAsSb
  • InP
  • doping graded
  • millimeter-wave

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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