We report the fabrication of the first 0.33-μm gate-length AlInAs/InP high electron mobility transistors (HEMT’s). These InP-channel devices have ft values as high as 76 GHz, fmax values of 146 GHz, and maximum stable gains of 16.8, 14, and 12 dB at 10, 18, and 30 GHz, respectively. The extrinsic dc transconductances are as high as 610 mS/mm, with drain-source breakdown voltages exceeding 10 V. The effective electron velocity in the InP channel is estimated to be at least 1.8 x 107 cm/s, while the ftLg product is 29 GHz·μm. These results are the best that we are aware of for InP-channel devices and are comparable to the best reported results for similar InGaAs-channel devices.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering