0.33-μm Gate-Length Millimeter-Wave InP-Channel HEMT’s with High ft and fmax

L. Aina; M. Burgess; M. Mattingly; James M. O’Connor; A. Meerschaert; M. Tong; A. Ketterson; Ilesanmi Adesida

doi:10.1109/55.116925

0.33-μm Gate-Length Millimeter-Wave InP-Channel HEMT’s with High ft and fmax

L. Aina, M. Burgess, M. Mattingly, James M. O’Connor, A. Meerschaert, M. Tong, A. Ketterson, Ilesanmi Adesida

Research output: Contribution to journal › Article › peer-review

Abstract

We report the fabrication of the first 0.33-μm gate-length AlInAs/InP high electron mobility transistors (HEMT’s). These InP-channel devices have ft values as high as 76 GHz, fmax values of 146 GHz, and maximum stable gains of 16.8, 14, and 12 dB at 10, 18, and 30 GHz, respectively. The extrinsic dc transconductances are as high as 610 mS/mm, with drain-source breakdown voltages exceeding 10 V. The effective electron velocity in the InP channel is estimated to be at least 1.8 x 107 cm/s, while the ftLg product is 29 GHz·μm. These results are the best that we are aware of for InP-channel devices and are comparable to the best reported results for similar InGaAs-channel devices.

Original language	English (US)
Pages (from-to)	483-485
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	12
Issue number	9
DOIs	https://doi.org/10.1109/55.116925
State	Published - Sep 1991
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/55.116925

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@article{26507f98ac814a63a7dd3d75e86b612c,

title = "0.33-μm Gate-Length Millimeter-Wave InP-Channel HEMT{\textquoteright}s with High ft and fmax",

abstract = "We report the fabrication of the first 0.33-μm gate-length AlInAs/InP high electron mobility transistors (HEMT{\textquoteright}s). These InP-channel devices have ft values as high as 76 GHz, fmax values of 146 GHz, and maximum stable gains of 16.8, 14, and 12 dB at 10, 18, and 30 GHz, respectively. The extrinsic dc transconductances are as high as 610 mS/mm, with drain-source breakdown voltages exceeding 10 V. The effective electron velocity in the InP channel is estimated to be at least 1.8 x 107 cm/s, while the ftLg product is 29 GHz·μm. These results are the best that we are aware of for InP-channel devices and are comparable to the best reported results for similar InGaAs-channel devices.",

author = "L. Aina and M. Burgess and M. Mattingly and O{\textquoteright}Connor, {James M.} and A. Meerschaert and M. Tong and A. Ketterson and Ilesanmi Adesida",

note = "Funding Information: Manuscript received April 19, 1991; revised June 20, 1991. This work was supported by the Naval Research Laboratory under Contract {"}14-89-C-2440 at Allied-Signal and by NSF Grant ECD89-43166 at the University of Illinois. L. Aina, M. Burgess, M. Mattingly, J. M. O'Connor, and A. Meer-schaert are with the Aerospace Technology Center, Allied-Signal Aerospace Company, Columbia, MD 21045. M. Tong, A. Ketterson, and I. Adesida are with the Center for Compound Semiconductor Microelectronics and the Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61801. IEEE Log Number 9102464.",

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T1 - 0.33-μm Gate-Length Millimeter-Wave InP-Channel HEMT’s with High ft and fmax

AU - Aina, L.

AU - Burgess, M.

AU - Mattingly, M.

AU - O’Connor, James M.

AU - Meerschaert, A.

AU - Tong, M.

AU - Ketterson, A.

AU - Adesida, Ilesanmi

N1 - Funding Information: Manuscript received April 19, 1991; revised June 20, 1991. This work was supported by the Naval Research Laboratory under Contract "14-89-C-2440 at Allied-Signal and by NSF Grant ECD89-43166 at the University of Illinois. L. Aina, M. Burgess, M. Mattingly, J. M. O'Connor, and A. Meer-schaert are with the Aerospace Technology Center, Allied-Signal Aerospace Company, Columbia, MD 21045. M. Tong, A. Ketterson, and I. Adesida are with the Center for Compound Semiconductor Microelectronics and the Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61801. IEEE Log Number 9102464.

PY - 1991/9

Y1 - 1991/9

N2 - We report the fabrication of the first 0.33-μm gate-length AlInAs/InP high electron mobility transistors (HEMT’s). These InP-channel devices have ft values as high as 76 GHz, fmax values of 146 GHz, and maximum stable gains of 16.8, 14, and 12 dB at 10, 18, and 30 GHz, respectively. The extrinsic dc transconductances are as high as 610 mS/mm, with drain-source breakdown voltages exceeding 10 V. The effective electron velocity in the InP channel is estimated to be at least 1.8 x 107 cm/s, while the ftLg product is 29 GHz·μm. These results are the best that we are aware of for InP-channel devices and are comparable to the best reported results for similar InGaAs-channel devices.

AB - We report the fabrication of the first 0.33-μm gate-length AlInAs/InP high electron mobility transistors (HEMT’s). These InP-channel devices have ft values as high as 76 GHz, fmax values of 146 GHz, and maximum stable gains of 16.8, 14, and 12 dB at 10, 18, and 30 GHz, respectively. The extrinsic dc transconductances are as high as 610 mS/mm, with drain-source breakdown voltages exceeding 10 V. The effective electron velocity in the InP channel is estimated to be at least 1.8 x 107 cm/s, while the ftLg product is 29 GHz·μm. These results are the best that we are aware of for InP-channel devices and are comparable to the best reported results for similar InGaAs-channel devices.

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0.33-μm Gate-Length Millimeter-Wave InP-Channel HEMT’s with High ft and fmax

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