0.32µm gate length InP-channel MODFETS with f_t above 90 GHz

Keyphrases

• Gate Length 100%
• Delta Doping 100%
• High Performance 50%
• Field-effect Transistors 50%
• Capping Layer 50%
• Modulation-doped 50%
• Current Gain Cutoff Frequency 50%
• Parasitic Resistance 50%
• InAlAs 50%
• Transconductance 50%
• Doped Heterostructure 50%
• Low Parasitics 50%

Engineering

• Gate Length 100%
• Field-Effect Transistor 50%
• Heterostructures 50%
• Current Gain 50%
• Cutoff Frequency 50%
• Parasitic Resistance 50%
• Source Voltage 50%
• Cap Layer 50%