The fabrication and characterisation of high performance InAlAs/InP modulation-doped field-effect transistors (MODFETs) with 0.32µm gate lengths are reported. Devices have been fabricated on two different delta-doped heterostructures with one having an extra delta-doping plane just below the cap layer. The extra doping resulted in devices with lower source and drain parasitic resistances. Extrinsic DC transconductances gm as high as 805mS/mm and unity current-gain cut-off frequency ft, as high as 92GHz obtained for these devices at a drain-to-source voltage Vds of 2 V are attributed to the low parasitics. Also, these devices exhibited an ft, of at least 75 GHz up to a Vds of 4 V.
|Original language||English (US)|
|Number of pages||3|
|State||Published - Jul 1993|
ASJC Scopus subject areas
- Electrical and Electronic Engineering