0.32µm gate length InP-channel MODFETS with ft above 90 GHz

D. G. Ballegeer, K. Nummila, I. Adesida, C. Caneau, R. Bhat

Research output: Contribution to journalArticle

Abstract

The fabrication and characterisation of high performance InAlAs/InP modulation-doped field-effect transistors (MODFETs) with 0.32µm gate lengths are reported. Devices have been fabricated on two different delta-doped heterostructures with one having an extra delta-doping plane just below the cap layer. The extra doping resulted in devices with lower source and drain parasitic resistances. Extrinsic DC transconductances gm as high as 805mS/mm and unity current-gain cut-off frequency ft, as high as 92GHz obtained for these devices at a drain-to-source voltage Vds of 2 V are attributed to the low parasitics. Also, these devices exhibited an ft, of at least 75 GHz up to a Vds of 4 V.

Original languageEnglish (US)
Pages (from-to)1375-1377
Number of pages3
JournalElectronics Letters
Volume29
Issue number15
DOIs
StatePublished - Jul 1993

Keywords

  • MODFETs

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Ballegeer, D. G., Nummila, K., Adesida, I., Caneau, C., & Bhat, R. (1993). 0.32µm gate length InP-channel MODFETS with ft above 90 GHz. Electronics Letters, 29(15), 1375-1377. https://doi.org/10.1049/el:19930921