The fabrication and performance of ultra-high-speed 0.3-μm gate-length enhancement-mode high-electron-mobility transistors (E-HEMT's) are reported. By using a buried platinum-gate technology and incorporating an etch-stop layer in the heterostructure design, submicron E-HEMT devices exhibiting both high-threshold voltages and excellent threshold-voltage uniformity have been achieved. The devices demonstrate a threshold voltage of+171 mV with a standard deviation of only 9 mV. In addition, a maximum DC extrinsic transconductance of 697 mS/mm is measured at room temperature. The output conductance is 22 mS/mm, which results in a maximum voltage gain (9m/9o) of 32. The devices show excellent RF performance, with a unity current-gain cutoff frequency (ft) of 116 GHz and a maximum frequency of oscillation (fmax) of 229 GHz. To the best of the authors' knowledge, these are the highest reported frequencies for lattice-matched E-HEMT's on InP.
|Original language||English (US)|
|Number of pages||3|
|Journal||IEEE Electron Device Letters|
|State||Published - Jun 1997|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering