0.3-μm gate-length enhancement-mode InAlAs/InGaAs/InP high-electron mobility transistor

A. Mahajan; M. Arafa; P. Fay; C. Caneau; I. Adesida

doi:10.1109/55.585360

0.3-μm gate-length enhancement-mode InAlAs/InGaAs/InP high-electron mobility transistor

A. Mahajan, M. Arafa, P. Fay, C. Caneau, I. Adesida

Research output: Contribution to journal › Article › peer-review

Abstract

The fabrication and performance of ultra-high-speed 0.3-μm gate-length enhancement-mode high-electron-mobility transistors (E-HEMT's) are reported. By using a buried platinum-gate technology and incorporating an etch-stop layer in the heterostructure design, submicron E-HEMT devices exhibiting both high-threshold voltages and excellent threshold-voltage uniformity have been achieved. The devices demonstrate a threshold voltage of+171 mV with a standard deviation of only 9 mV. In addition, a maximum DC extrinsic transconductance of 697 mS/mm is measured at room temperature. The output conductance is 22 mS/mm, which results in a maximum voltage gain (9_m/9_o) of 32. The devices show excellent RF performance, with a unity current-gain cutoff frequency (f_t) of 116 GHz and a maximum frequency of oscillation (f_max) of 229 GHz. To the best of the authors' knowledge, these are the highest reported frequencies for lattice-matched E-HEMT's on InP.

Original language	English (US)
Pages (from-to)	284-286
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	18
Issue number	6
DOIs	https://doi.org/10.1109/55.585360
State	Published - Jun 1997
Externally published	Yes

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Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/55.585360

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title = "0.3-μm gate-length enhancement-mode InAlAs/InGaAs/InP high-electron mobility transistor",

abstract = "The fabrication and performance of ultra-high-speed 0.3-μm gate-length enhancement-mode high-electron-mobility transistors (E-HEMT's) are reported. By using a buried platinum-gate technology and incorporating an etch-stop layer in the heterostructure design, submicron E-HEMT devices exhibiting both high-threshold voltages and excellent threshold-voltage uniformity have been achieved. The devices demonstrate a threshold voltage of+171 mV with a standard deviation of only 9 mV. In addition, a maximum DC extrinsic transconductance of 697 mS/mm is measured at room temperature. The output conductance is 22 mS/mm, which results in a maximum voltage gain (9m/9o) of 32. The devices show excellent RF performance, with a unity current-gain cutoff frequency (ft) of 116 GHz and a maximum frequency of oscillation (fmax) of 229 GHz. To the best of the authors' knowledge, these are the highest reported frequencies for lattice-matched E-HEMT's on InP.",

author = "A. Mahajan and M. Arafa and P. Fay and C. Caneau and I. Adesida",

note = "Funding Information: Manuscript received December 26, 1996; revised February 18, 1997. This work was supported by the University of Illinois, the National Science Foundation under Grant 89-43166, and by the Joint Services Electronic Program under Grant N00014-90-J-1270.",

year = "1997",

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doi = "10.1109/55.585360",

language = "English (US)",

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T1 - 0.3-μm gate-length enhancement-mode InAlAs/InGaAs/InP high-electron mobility transistor

AU - Mahajan, A.

AU - Arafa, M.

AU - Fay, P.

AU - Caneau, C.

AU - Adesida, I.

N1 - Funding Information: Manuscript received December 26, 1996; revised February 18, 1997. This work was supported by the University of Illinois, the National Science Foundation under Grant 89-43166, and by the Joint Services Electronic Program under Grant N00014-90-J-1270.

PY - 1997/6

Y1 - 1997/6

N2 - The fabrication and performance of ultra-high-speed 0.3-μm gate-length enhancement-mode high-electron-mobility transistors (E-HEMT's) are reported. By using a buried platinum-gate technology and incorporating an etch-stop layer in the heterostructure design, submicron E-HEMT devices exhibiting both high-threshold voltages and excellent threshold-voltage uniformity have been achieved. The devices demonstrate a threshold voltage of+171 mV with a standard deviation of only 9 mV. In addition, a maximum DC extrinsic transconductance of 697 mS/mm is measured at room temperature. The output conductance is 22 mS/mm, which results in a maximum voltage gain (9m/9o) of 32. The devices show excellent RF performance, with a unity current-gain cutoff frequency (ft) of 116 GHz and a maximum frequency of oscillation (fmax) of 229 GHz. To the best of the authors' knowledge, these are the highest reported frequencies for lattice-matched E-HEMT's on InP.

AB - The fabrication and performance of ultra-high-speed 0.3-μm gate-length enhancement-mode high-electron-mobility transistors (E-HEMT's) are reported. By using a buried platinum-gate technology and incorporating an etch-stop layer in the heterostructure design, submicron E-HEMT devices exhibiting both high-threshold voltages and excellent threshold-voltage uniformity have been achieved. The devices demonstrate a threshold voltage of+171 mV with a standard deviation of only 9 mV. In addition, a maximum DC extrinsic transconductance of 697 mS/mm is measured at room temperature. The output conductance is 22 mS/mm, which results in a maximum voltage gain (9m/9o) of 32. The devices show excellent RF performance, with a unity current-gain cutoff frequency (ft) of 116 GHz and a maximum frequency of oscillation (fmax) of 229 GHz. To the best of the authors' knowledge, these are the highest reported frequencies for lattice-matched E-HEMT's on InP.

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0.3-μm gate-length enhancement-mode InAlAs/InGaAs/InP high-electron mobility transistor

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