0.25 μm self-aligned AlGaN/GaN high electron mobility transistors

Vipan Kumar; D. H. Kim; A. Basu; I. Adesida

doi:10.1109/LED.2007.911612

0.25 μm self-aligned AlGaN/GaN high electron mobility transistors

Vipan Kumar, D. H. Kim, A. Basu, I. Adesida

Research output: Contribution to journal › Article › peer-review

Abstract

Self-aligned AlGaN/GaN high electron mobility transistors grown on semiinsulating SiC substrates with a 0.25 μm gate-length were fabricated using a single-step ohmic process. Our recently developed Mo/ Al/Mo/Au-based ohmic contact requiring annealing temperatures between 500 °C and 600 °C was utilized. Ohmic contact resistances between 0.35-0.6 Ω · mm were achieved. These 0.25 μm gate-length devices exhibited drain current density as high as 1.05 A/mm at a gate bias of 0 V and a drain bias of 10 V. A knee voltage of less than 2 V and a peak extrinsic transconductance (g_m) of 321 mS/ mm were measured. For their microwave characteristics, a unity gain cutoff frequency (f_m) of 82 GHz and maximum frequency of oscillation (f_max) of 103 GHz were measured.

Original language	English (US)
Pages (from-to)	18-20
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	29
Issue number	1
DOIs	https://doi.org/10.1109/LED.2007.911612
State	Published - Jan 2008
Externally published	Yes

Keywords

GaN
High electron mobility transistors (HEMTs)
Self-aligned
SiC

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Online availability

10.1109/LED.2007.911612

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abstract = "Self-aligned AlGaN/GaN high electron mobility transistors grown on semiinsulating SiC substrates with a 0.25 μm gate-length were fabricated using a single-step ohmic process. Our recently developed Mo/ Al/Mo/Au-based ohmic contact requiring annealing temperatures between 500 °C and 600 °C was utilized. Ohmic contact resistances between 0.35-0.6 Ω · mm were achieved. These 0.25 μm gate-length devices exhibited drain current density as high as 1.05 A/mm at a gate bias of 0 V and a drain bias of 10 V. A knee voltage of less than 2 V and a peak extrinsic transconductance (gm) of 321 mS/ mm were measured. For their microwave characteristics, a unity gain cutoff frequency (fm) of 82 GHz and maximum frequency of oscillation (fmax) of 103 GHz were measured.",

keywords = "GaN, High electron mobility transistors (HEMTs), Self-aligned, SiC",

author = "Vipan Kumar and Kim, {D. H.} and A. Basu and I. Adesida",

note = "Funding Information: Manuscript received August 22, 2007; revised October 16, 2007. This work was supported by ONR under Contract N000140610449 (monitor: Dr. P. Maki). The review of this letter was arranged by Editor G. Meneghesso. The authors are with the Micro and Nanotechnology Laboratory, Department of Electrical and Computer Engineering, University of Illinois at Urbana– Champaign, Urbana, IL 61801 USA (e-mail: [email protected]). Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LED.2007.911612",

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AU - Basu, A.

AU - Adesida, I.

N1 - Funding Information: Manuscript received August 22, 2007; revised October 16, 2007. This work was supported by ONR under Contract N000140610449 (monitor: Dr. P. Maki). The review of this letter was arranged by Editor G. Meneghesso. The authors are with the Micro and Nanotechnology Laboratory, Department of Electrical and Computer Engineering, University of Illinois at Urbana– Champaign, Urbana, IL 61801 USA (e-mail: [email protected]). Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LED.2007.911612

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0.25 μm self-aligned AlGaN/GaN high electron mobility transistors

Abstract

Keywords

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