0.25-μm gate millimeter-wave ion-implanted GaAs MESFET's

G. W. Wang; Milton Feng; C. L. Lau; C. Ito; Thomas R. Lepkowski

0.25-μm gate millimeter-wave ion-implanted GaAs MESFET's

G. W. Wang, Milton Feng, C. L. Lau, C. Ito, Thomas R. Lepkowski

Research output: Contribution to journal › Article › peer-review

Abstract

Quarter-micrometer gated ion-implanted GaAs MESFETs which demonstrate device performance comparable to AlGaAs/InGaAs pseudomorphic HEMTs (high-electron mobility transistors) have been successfully fabricated on 3-in-diameter GaAs substrates. The MESFETs show a peak extrinsic transconductance of 480 mS/mm with a high channel current of 720 mA/nm. From S-parameter measurements, the MESFETs show a peak current-gain cutoff frequency f_t of 68 GHz with an average f_t of 62 GHz across the wafer. The 0.25-μm gate MESFETs also exhibit a maximum-available-gain cutoff frequency f_t greater than 100 GHz. These results are the first demonstration of potential volume production of high-performance ion-implanted MESFETs for millimeter-wave application.

Original language	English (US)
Pages (from-to)	186-188
Number of pages	3
Journal	Electron device letters
Volume	v
Issue number	n
State	Published - 1992
Externally published	Yes

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General Engineering

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@article{6719de2734024356bbbcb8b342ebc29c,

title = "0.25-μm gate millimeter-wave ion-implanted GaAs MESFET's",

abstract = "Quarter-micrometer gated ion-implanted GaAs MESFETs which demonstrate device performance comparable to AlGaAs/InGaAs pseudomorphic HEMTs (high-electron mobility transistors) have been successfully fabricated on 3-in-diameter GaAs substrates. The MESFETs show a peak extrinsic transconductance of 480 mS/mm with a high channel current of 720 mA/nm. From S-parameter measurements, the MESFETs show a peak current-gain cutoff frequency ft of 68 GHz with an average ft of 62 GHz across the wafer. The 0.25-μm gate MESFETs also exhibit a maximum-available-gain cutoff frequency ft greater than 100 GHz. These results are the first demonstration of potential volume production of high-performance ion-implanted MESFETs for millimeter-wave application.",

author = "Wang, {G. W.} and Milton Feng and Lau, {C. L.} and C. Ito and Lepkowski, {Thomas R.}",

year = "1992",

language = "English (US)",

volume = "v",

pages = "186--188",

journal = "Electron device letters",

issn = "0193-8576",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "n",

}

TY - JOUR

T1 - 0.25-μm gate millimeter-wave ion-implanted GaAs MESFET's

AU - Wang, G. W.

AU - Feng, Milton

AU - Lau, C. L.

AU - Ito, C.

AU - Lepkowski, Thomas R.

PY - 1992

Y1 - 1992

N2 - Quarter-micrometer gated ion-implanted GaAs MESFETs which demonstrate device performance comparable to AlGaAs/InGaAs pseudomorphic HEMTs (high-electron mobility transistors) have been successfully fabricated on 3-in-diameter GaAs substrates. The MESFETs show a peak extrinsic transconductance of 480 mS/mm with a high channel current of 720 mA/nm. From S-parameter measurements, the MESFETs show a peak current-gain cutoff frequency ft of 68 GHz with an average ft of 62 GHz across the wafer. The 0.25-μm gate MESFETs also exhibit a maximum-available-gain cutoff frequency ft greater than 100 GHz. These results are the first demonstration of potential volume production of high-performance ion-implanted MESFETs for millimeter-wave application.

AB - Quarter-micrometer gated ion-implanted GaAs MESFETs which demonstrate device performance comparable to AlGaAs/InGaAs pseudomorphic HEMTs (high-electron mobility transistors) have been successfully fabricated on 3-in-diameter GaAs substrates. The MESFETs show a peak extrinsic transconductance of 480 mS/mm with a high channel current of 720 mA/nm. From S-parameter measurements, the MESFETs show a peak current-gain cutoff frequency ft of 68 GHz with an average ft of 62 GHz across the wafer. The 0.25-μm gate MESFETs also exhibit a maximum-available-gain cutoff frequency ft greater than 100 GHz. These results are the first demonstration of potential volume production of high-performance ion-implanted MESFETs for millimeter-wave application.

UR - http://www.scopus.com/inward/record.url?scp=34250860208&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34250860208&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:34250860208

SN - 0193-8576

VL - v

SP - 186

EP - 188

JO - Electron device letters

JF - Electron device letters

IS - n

ER -

0.25-μm gate millimeter-wave ion-implanted GaAs MESFET's

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