Quarter-micrometer gated ion-implanted GaAs MESFETs which demonstrate device performance comparable to AlGaAs/InGaAs pseudomorphic HEMTs (high-electron mobility transistors) have been successfully fabricated on 3-in-diameter GaAs substrates. The MESFETs show a peak extrinsic transconductance of 480 mS/mm with a high channel current of 720 mA/nm. From S-parameter measurements, the MESFETs show a peak current-gain cutoff frequency ft of 68 GHz with an average ft of 62 GHz across the wafer. The 0.25-μm gate MESFETs also exhibit a maximum-available-gain cutoff frequency ft greater than 100 GHz. These results are the first demonstration of potential volume production of high-performance ion-implanted MESFETs for millimeter-wave application.
|Original language||English (US)|
|Number of pages||3|
|Journal||Electron device letters|
|State||Published - 1992|
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