0.25 μm gate-length, MBE-grown AlGaN/GaN HEMTs with high current and high fT

V. Kumar, W. Lu, R. Schwindt, J. Van Hove, P. Chow, I. Adesida

Research output: Contribution to journalArticlepeer-review

Fingerprint

Dive into the research topics of '0.25 μm gate-length, MBE-grown AlGaN/GaN HEMTs with high current and high fT'. Together they form a unique fingerprint.

Engineering & Materials Science