0.25 μm gate-length, MBE-grown AlGaN/GaN HEMTs with high current and high fT

V. Kumar, W. Lu, R. Schwindt, J. Van Hove, P. Chow, I. Adesida

Research output: Contribution to journalArticlepeer-review

Abstract

MBE-grown AlGaN/GaN high electron mobility transistors (HEMTs) on sapphire substrates have been fabricated. These 0.25 μm gate-length devices exhibited a maximum drain current density as high as 1.39 A/mm, a unity gain cutoff frequency (fT) of 67 GHz, and a maximum frequency of oscillation (fmax) of 136 GHz. The fT of 67 GHz and fmax of 136 GHz are the highest reported values for 0.25 μm gate-length GaN-based HEMTs.

Original languageEnglish (US)
Pages (from-to)858-859
Number of pages2
JournalElectronics Letters
Volume37
Issue number13
DOIs
StatePublished - Jun 21 2001

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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