0.25 μm gate-length, MBE-grown AlGaN/GaN HEMTs with high current and high fT

V. Kumar; W. Lu; R. Schwindt; J. Van Hove; P. Chow; I. Adesida

doi:10.1049/el:20010582

0.25 μm gate-length, MBE-grown AlGaN/GaN HEMTs with high current and high f_T

V. Kumar, W. Lu, R. Schwindt, J. Van Hove, P. Chow, I. Adesida

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Abstract

MBE-grown AlGaN/GaN high electron mobility transistors (HEMTs) on sapphire substrates have been fabricated. These 0.25 μm gate-length devices exhibited a maximum drain current density as high as 1.39 A/mm, a unity gain cutoff frequency (f_T) of 67 GHz, and a maximum frequency of oscillation (f_max) of 136 GHz. The f_T of 67 GHz and f_max of 136 GHz are the highest reported values for 0.25 μm gate-length GaN-based HEMTs.

Original language	English (US)
Pages (from-to)	858-859
Number of pages	2
Journal	Electronics Letters
Volume	37
Issue number	13
DOIs	https://doi.org/10.1049/el:20010582
State	Published - Jun 21 2001

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:20010582

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Cite this

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title = "0.25 μm gate-length, MBE-grown AlGaN/GaN HEMTs with high current and high fT",

abstract = "MBE-grown AlGaN/GaN high electron mobility transistors (HEMTs) on sapphire substrates have been fabricated. These 0.25 μm gate-length devices exhibited a maximum drain current density as high as 1.39 A/mm, a unity gain cutoff frequency (fT) of 67 GHz, and a maximum frequency of oscillation (fmax) of 136 GHz. The fT of 67 GHz and fmax of 136 GHz are the highest reported values for 0.25 μm gate-length GaN-based HEMTs.",

author = "V. Kumar and W. Lu and R. Schwindt and {Van Hove}, J. and P. Chow and I. Adesida",

year = "2001",

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volume = "37",

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T1 - 0.25 μm gate-length, MBE-grown AlGaN/GaN HEMTs with high current and high fT

AU - Kumar, V.

AU - Lu, W.

AU - Schwindt, R.

AU - Van Hove, J.

AU - Chow, P.

AU - Adesida, I.

PY - 2001/6/21

Y1 - 2001/6/21

N2 - MBE-grown AlGaN/GaN high electron mobility transistors (HEMTs) on sapphire substrates have been fabricated. These 0.25 μm gate-length devices exhibited a maximum drain current density as high as 1.39 A/mm, a unity gain cutoff frequency (fT) of 67 GHz, and a maximum frequency of oscillation (fmax) of 136 GHz. The fT of 67 GHz and fmax of 136 GHz are the highest reported values for 0.25 μm gate-length GaN-based HEMTs.

AB - MBE-grown AlGaN/GaN high electron mobility transistors (HEMTs) on sapphire substrates have been fabricated. These 0.25 μm gate-length devices exhibited a maximum drain current density as high as 1.39 A/mm, a unity gain cutoff frequency (fT) of 67 GHz, and a maximum frequency of oscillation (fmax) of 136 GHz. The fT of 67 GHz and fmax of 136 GHz are the highest reported values for 0.25 μm gate-length GaN-based HEMTs.

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