0.25 μm emitter InP SHBTs with f T = 550 GHz and BV CEO > 2V

Walid Hafez, Milton Feng

Research output: Contribution to journalArticle

Abstract

We report DC and RF characteristics of InP single heterojunction bipolar transistors (SHBTs) exhibiting ultrahigh cut-off frequencies of f T = 550 GHz and f MAX = 255 GHz, with BV CEO = 2.1 V. The devices exhibit record f T performance of bipolar transistors at operating current densities in excess of 19 mA/μm 2, achieved through the use of a vertically scaled epitaxial structure featuring a 20 nm base and a lightly-doped 65 nm InGaAs collector. Thermal resistance calculations for a 0.25×8 μm 2 device yield an R TH = 5.1 °C/mW, corresponding to a ΔT j = 173 °C at 34 m W of power dissipation at peak operating conditions.

Original languageEnglish (US)
Pages (from-to)549-552
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
StatePublished - 2004

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ASJC Scopus subject areas

  • Engineering(all)

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