We report DC and RF characteristics of InP single heterojunction bipolar transistors (SHBTs) exhibiting ultrahigh cut-off frequencies of f T = 550 GHz and f MAX = 255 GHz, with BV CEO = 2.1 V. The devices exhibit record f T performance of bipolar transistors at operating current densities in excess of 19 mA/μm 2, achieved through the use of a vertically scaled epitaxial structure featuring a 20 nm base and a lightly-doped 65 nm InGaAs collector. Thermal resistance calculations for a 0.25×8 μm 2 device yield an R TH = 5.1 °C/mW, corresponding to a ΔT j = 173 °C at 34 m W of power dissipation at peak operating conditions.
|Original language||English (US)|
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting, IEDM|
|State||Published - 2004|
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