TY - JOUR
T1 - 0.25 μm emitter InP SHBTs with f T = 550 GHz and BV CEO > 2V
AU - Hafez, Walid
AU - Feng, Milton
N1 - Funding Information:
The authors would like to thank Mr. Frank Stroili from BAE Systems for the DARPA-TFAST program management support, DARPA-TFAST program manager Dr. John C. Zolper, and ARL contract manager Dr. Alfred Hung for program support. Thanks also to Dr. David Caruth and Dr. S-C. Shen for technical advice and helpful discussions.
PY - 2004
Y1 - 2004
N2 - We report DC and RF characteristics of InP single heterojunction bipolar transistors (SHBTs) exhibiting ultrahigh cut-off frequencies of f T = 550 GHz and f MAX = 255 GHz, with BV CEO = 2.1 V. The devices exhibit record f T performance of bipolar transistors at operating current densities in excess of 19 mA/μm 2, achieved through the use of a vertically scaled epitaxial structure featuring a 20 nm base and a lightly-doped 65 nm InGaAs collector. Thermal resistance calculations for a 0.25×8 μm 2 device yield an R TH = 5.1 °C/mW, corresponding to a ΔT j = 173 °C at 34 m W of power dissipation at peak operating conditions.
AB - We report DC and RF characteristics of InP single heterojunction bipolar transistors (SHBTs) exhibiting ultrahigh cut-off frequencies of f T = 550 GHz and f MAX = 255 GHz, with BV CEO = 2.1 V. The devices exhibit record f T performance of bipolar transistors at operating current densities in excess of 19 mA/μm 2, achieved through the use of a vertically scaled epitaxial structure featuring a 20 nm base and a lightly-doped 65 nm InGaAs collector. Thermal resistance calculations for a 0.25×8 μm 2 device yield an R TH = 5.1 °C/mW, corresponding to a ΔT j = 173 °C at 34 m W of power dissipation at peak operating conditions.
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M3 - Conference article
AN - SCOPUS:21644453885
SN - 0163-1918
SP - 549
EP - 552
JO - Technical Digest - International Electron Devices Meeting, IEDM
JF - Technical Digest - International Electron Devices Meeting, IEDM
T2 - IEEE International Electron Devices Meeting, 2004 IEDM
Y2 - 13 December 2004 through 15 December 2004
ER -