0.25-µm Gate Millimeter-Wave Ion-Implanted GaAs MESFET’s

G. W. Wang, Milton Feng, C. L. Lau, C. Ito, Thomas R. Lepkowski

Research output: Contribution to journalArticle

Abstract

Querter-micrometer gate ion-implanted GaAs MESFET’s which demonstrate device performance comparable to AlGaAs/InGaAs pseudomorphic HEMT’s have been successfully fabricated on 3-in-diameter GaAs substrates. The MESFET’s show a peak extrinsic transconductance of 480 mS/mm with a high channel current of 720 mA/ mm. From 5-parameter measurements, the MESFET’s show a peak current-gain cutoff frequency ftof 68 GHz with an average ft of 62 GHz across the wafer. The 0.25-µm gate MESFET’s also exhibit a maximum-available-gain cutoff frequency fmax greater than 100 GHz. These results are the first demonstration of potential volume production of highperformance ion-implanted MESFET’s for millimeter-wave application.

Original languageEnglish (US)
Pages (from-to)186-188
Number of pages3
JournalIEEE Electron Device Letters
Volume10
Issue number5
DOIs
StatePublished - May 1989
Externally publishedYes

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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