0.23µm Gate Length Modfets on InAIAs/InGaAs/InP Heterostructure Grown by Movpe

M. Tong, A. Ketterson, K. Nummila, I. Adesida, L. Aina, M. Mattingly

Research output: Contribution to journalArticlepeer-review

Abstract

Modulation-doped field effect transistors (MODFETs) with 0.23µm fan gate lengths have been fabricated on an InAIAs/InGaAs/InP heterostructure grown by metal organic vapour phase epitaxy (MOVPE/MOCVD). Extrinsic DC transconductance as high as 800mS/mm, and unity current gain cutoff frequency f1of over 120 GHz at room temperature have been achieved. These gmand f1values compare favourably with the best devices of similar gate length grown by molecular-beam epitaxy (MBE) and are the highest values reported for any device grown by MOVPE.

Original languageEnglish (US)
Pages (from-to)1426-1427
Number of pages2
JournalElectronics Letters
Volume27
Issue number16
DOIs
StatePublished - Feb 1 1991

Keywords

  • Semiconductor devices and material
  • Transistors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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