0.23µm Gate Length Modfets on InAIAs/InGaAs/InP Heterostructure Grown by Movpe

M. Tong; A. Ketterson; K. Nummila; I. Adesida; L. Aina; M. Mattingly

doi:10.1049/el:19910894

0.23µm Gate Length Modfets on InAIAs/InGaAs/InP Heterostructure Grown by Movpe

M. Tong, A. Ketterson, K. Nummila, I. Adesida, L. Aina, M. Mattingly

Research output: Contribution to journal › Article › peer-review

Abstract

Modulation-doped field effect transistors (MODFETs) with 0.23µm fan gate lengths have been fabricated on an InAIAs/InGaAs/InP heterostructure grown by metal organic vapour phase epitaxy (MOVPE/MOCVD). Extrinsic DC transconductance as high as 800mS/mm, and unity current gain cutoff frequency f₁of over 120 GHz at room temperature have been achieved. These g_mand f₁values compare favourably with the best devices of similar gate length grown by molecular-beam epitaxy (MBE) and are the highest values reported for any device grown by MOVPE.

Original language	English (US)
Pages (from-to)	1426-1427
Number of pages	2
Journal	Electronics Letters
Volume	27
Issue number	16
DOIs	https://doi.org/10.1049/el:19910894
State	Published - Feb 1 1991
Externally published	Yes

Keywords

Semiconductor devices and material
Transistors

ASJC Scopus subject areas

Electrical and Electronic Engineering

Online availability

10.1049/el:19910894

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abstract = "Modulation-doped field effect transistors (MODFETs) with 0.23µm fan gate lengths have been fabricated on an InAIAs/InGaAs/InP heterostructure grown by metal organic vapour phase epitaxy (MOVPE/MOCVD). Extrinsic DC transconductance as high as 800mS/mm, and unity current gain cutoff frequency f1of over 120 GHz at room temperature have been achieved. These gmand f1values compare favourably with the best devices of similar gate length grown by molecular-beam epitaxy (MBE) and are the highest values reported for any device grown by MOVPE.",

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author = "M. Tong and A. Ketterson and K. Nummila and I. Adesida and L. Aina and M. Mattingly",

year = "1991",

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T1 - 0.23µm Gate Length Modfets on InAIAs/InGaAs/InP Heterostructure Grown by Movpe

AU - Tong, M.

AU - Ketterson, A.

AU - Nummila, K.

AU - Adesida, I.

AU - Aina, L.

AU - Mattingly, M.

PY - 1991/2/1

Y1 - 1991/2/1

N2 - Modulation-doped field effect transistors (MODFETs) with 0.23µm fan gate lengths have been fabricated on an InAIAs/InGaAs/InP heterostructure grown by metal organic vapour phase epitaxy (MOVPE/MOCVD). Extrinsic DC transconductance as high as 800mS/mm, and unity current gain cutoff frequency f1of over 120 GHz at room temperature have been achieved. These gmand f1values compare favourably with the best devices of similar gate length grown by molecular-beam epitaxy (MBE) and are the highest values reported for any device grown by MOVPE.

AB - Modulation-doped field effect transistors (MODFETs) with 0.23µm fan gate lengths have been fabricated on an InAIAs/InGaAs/InP heterostructure grown by metal organic vapour phase epitaxy (MOVPE/MOCVD). Extrinsic DC transconductance as high as 800mS/mm, and unity current gain cutoff frequency f1of over 120 GHz at room temperature have been achieved. These gmand f1values compare favourably with the best devices of similar gate length grown by molecular-beam epitaxy (MBE) and are the highest values reported for any device grown by MOVPE.

KW - Semiconductor devices and material

KW - Transistors

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0.23µm Gate Length Modfets on InAIAs/InGaAs/InP Heterostructure Grown by Movpe

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