0.2 μm T-gate InAlAs/InGaAs MODFET with FT = 170 GHz

I. Adesida; A. Ketterson; J. Laskar; S. Agarwala; T. Brock; J. Kolodzey; H. Morkoc

doi:10.1016/0167-9317(90)90075-5

0.2 μm T-gate InAlAs/InGaAs MODFET with F_T = 170 GHz

I. Adesida, A. Ketterson, J. Laskar, S. Agarwala, T. Brock, J. Kolodzey, H. Morkoc

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Abstract

0.2 μm T-gate MODFETs have been fabricated and characterized in a planar-doped, lattice-matched InAlAs/InGaAs/InP heterostructure. Extrinsic dc tranconductance as high as 704 mS/mm with very good pinch-off characteristics have been obtained in these depletion-mode devices. A unity current gain cut-off frequency, f_T, of 170 GHz is reported for 100 μm-wide MODFETs. This is the highest f_T ever reported for MODFETs with this gate length in any material system.

Original language	English (US)
Pages (from-to)	69-72
Number of pages	4
Journal	Microelectronic Engineering
Volume	11
Issue number	1-4
DOIs	https://doi.org/10.1016/0167-9317(90)90075-5
State	Published - Apr 1990

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/0167-9317(90)90075-5

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Cite this

@article{aa81d804af864bf89ede22bd8482f57c,

title = "0.2 μm T-gate InAlAs/InGaAs MODFET with FT = 170 GHz",

abstract = "0.2 μm T-gate MODFETs have been fabricated and characterized in a planar-doped, lattice-matched InAlAs/InGaAs/InP heterostructure. Extrinsic dc tranconductance as high as 704 mS/mm with very good pinch-off characteristics have been obtained in these depletion-mode devices. A unity current gain cut-off frequency, fT, of 170 GHz is reported for 100 μm-wide MODFETs. This is the highest fT ever reported for MODFETs with this gate length in any material system.",

author = "I. Adesida and A. Ketterson and J. Laskar and S. Agarwala and T. Brock and J. Kolodzey and H. Morkoc",

note = "Funding Information: The technical contributionso f J. Hughes, A. Pawlowski, and E. Andideh are gratefully acknowledged. This work was supported by NSF Grant ECD 89-43166, JSEP Grant NO0014 -C-014 9 and AFOSR Grant 89-0239.",

year = "1990",

month = apr,

doi = "10.1016/0167-9317(90)90075-5",

language = "English (US)",

volume = "11",

pages = "69--72",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

number = "1-4",

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TY - JOUR

T1 - 0.2 μm T-gate InAlAs/InGaAs MODFET with FT = 170 GHz

AU - Adesida, I.

AU - Ketterson, A.

AU - Laskar, J.

AU - Agarwala, S.

AU - Brock, T.

AU - Kolodzey, J.

AU - Morkoc, H.

N1 - Funding Information: The technical contributionso f J. Hughes, A. Pawlowski, and E. Andideh are gratefully acknowledged. This work was supported by NSF Grant ECD 89-43166, JSEP Grant NO0014 -C-014 9 and AFOSR Grant 89-0239.

PY - 1990/4

Y1 - 1990/4

N2 - 0.2 μm T-gate MODFETs have been fabricated and characterized in a planar-doped, lattice-matched InAlAs/InGaAs/InP heterostructure. Extrinsic dc tranconductance as high as 704 mS/mm with very good pinch-off characteristics have been obtained in these depletion-mode devices. A unity current gain cut-off frequency, fT, of 170 GHz is reported for 100 μm-wide MODFETs. This is the highest fT ever reported for MODFETs with this gate length in any material system.

AB - 0.2 μm T-gate MODFETs have been fabricated and characterized in a planar-doped, lattice-matched InAlAs/InGaAs/InP heterostructure. Extrinsic dc tranconductance as high as 704 mS/mm with very good pinch-off characteristics have been obtained in these depletion-mode devices. A unity current gain cut-off frequency, fT, of 170 GHz is reported for 100 μm-wide MODFETs. This is the highest fT ever reported for MODFETs with this gate length in any material system.

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