0.13 μm gate-length In0.52Al0.48As/In0.53Ga0.47As metamorphic HEMTs on GaAs substrate

D. C. Dumka; G. Cueva; W. E. Hoke; P. J. Lemonias; Ilesanmi Adesida

0.13 μm gate-length In_0.52Al_0.48As/In_0.53Ga_0.47As metamorphic HEMTs on GaAs substrate

D. C. Dumka, G. Cueva, W. E. Hoke, P. J. Lemonias, Ilesanmi Adesida

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Research output: Contribution to conference › Paper › peer-review

Abstract

Several 0.13 μm gate-length InAlAs/InGaAs MM-HEMTs were fabricated on GaAs substrate. DC and RF performance of the devices were measured. The resultant devices exhibit a record unity current gain cut-off frequency of 235 GHz.

Original language	English (US)
Pages	83-84
Number of pages	2
State	Published - 2000
Event	58th Device Research Conference (58th DRC) - Denver, CO, USA Duration: Jun 19 2000 → Jun 21 2000

Other

Other	58th Device Research Conference (58th DRC)
City	Denver, CO, USA
Period	6/19/00 → 6/21/00

ASJC Scopus subject areas

Engineering(all)

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Cite this

@conference{9389c928a81e4bca988688715c08b06f,

title = "0.13 μm gate-length In0.52Al0.48As/In0.53Ga0.47As metamorphic HEMTs on GaAs substrate",

abstract = "Several 0.13 μm gate-length InAlAs/InGaAs MM-HEMTs were fabricated on GaAs substrate. DC and RF performance of the devices were measured. The resultant devices exhibit a record unity current gain cut-off frequency of 235 GHz.",

author = "Dumka, {D. C.} and G. Cueva and Hoke, {W. E.} and Lemonias, {P. J.} and Ilesanmi Adesida",

year = "2000",

language = "English (US)",

pages = "83--84",

note = "58th Device Research Conference (58th DRC) ; Conference date: 19-06-2000 Through 21-06-2000",

}

TY - CONF

T1 - 0.13 μm gate-length In0.52Al0.48As/In0.53Ga0.47As metamorphic HEMTs on GaAs substrate

AU - Dumka, D. C.

AU - Cueva, G.

AU - Hoke, W. E.

AU - Lemonias, P. J.

AU - Adesida, Ilesanmi

PY - 2000

Y1 - 2000

N2 - Several 0.13 μm gate-length InAlAs/InGaAs MM-HEMTs were fabricated on GaAs substrate. DC and RF performance of the devices were measured. The resultant devices exhibit a record unity current gain cut-off frequency of 235 GHz.

AB - Several 0.13 μm gate-length InAlAs/InGaAs MM-HEMTs were fabricated on GaAs substrate. DC and RF performance of the devices were measured. The resultant devices exhibit a record unity current gain cut-off frequency of 235 GHz.

UR - http://www.scopus.com/inward/record.url?scp=0033652721&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033652721&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0033652721

SP - 83

EP - 84

T2 - 58th Device Research Conference (58th DRC)

Y2 - 19 June 2000 through 21 June 2000

ER -