Abstract
Several 0.13 μm gate-length InAlAs/InGaAs MM-HEMTs were fabricated on GaAs substrate. DC and RF performance of the devices were measured. The resultant devices exhibit a record unity current gain cut-off frequency of 235 GHz.
Original language | English (US) |
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Pages | 83-84 |
Number of pages | 2 |
State | Published - 2000 |
Event | 58th Device Research Conference (58th DRC) - Denver, CO, USA Duration: Jun 19 2000 → Jun 21 2000 |
Other
Other | 58th Device Research Conference (58th DRC) |
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City | Denver, CO, USA |
Period | 6/19/00 → 6/21/00 |
ASJC Scopus subject areas
- General Engineering