TY - GEN
T1 - μ-Porous Silicon (μPS) gas sensor based on interdigitated μ-electrodes (IDμE's)
AU - Valera, Enrique
AU - Casais, Olga
AU - Vetter, Michael
AU - Rodríguez, Ángel
PY - 2007
Y1 - 2007
N2 - A μ-porous silicon (μPS) gas sensor based on interdigitated μ-electrodes (IDuE's) has been designed and developed. μPS obtained by means of electrochemical anodization of a p-type silicon (c-Si) wafer was used as active layer. The μPS layers are supported by the bulk of the c-Si wafer. Interdigitated μ-electrodes, which work as transducers, were deposited on the uPS surface by means of gold evaporation using shadow mask technique. Different IDμE's, with different geometries and dimensions have been deposited. Additionally, different conditions of μPS formation, as i.e. electrolyte concentration, current density and anodization time, were used in order to obtain different actives layers with different absorption capabilities. Clear responses to organic vapors such us ethanol have been obtained.
AB - A μ-porous silicon (μPS) gas sensor based on interdigitated μ-electrodes (IDuE's) has been designed and developed. μPS obtained by means of electrochemical anodization of a p-type silicon (c-Si) wafer was used as active layer. The μPS layers are supported by the bulk of the c-Si wafer. Interdigitated μ-electrodes, which work as transducers, were deposited on the uPS surface by means of gold evaporation using shadow mask technique. Different IDμE's, with different geometries and dimensions have been deposited. Additionally, different conditions of μPS formation, as i.e. electrolyte concentration, current density and anodization time, were used in order to obtain different actives layers with different absorption capabilities. Clear responses to organic vapors such us ethanol have been obtained.
KW - Gas sensors
KW - Interdigitated μ-electrodes
KW - μ-porous silicon
UR - http://www.scopus.com/inward/record.url?scp=35148842629&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=35148842629&partnerID=8YFLogxK
U2 - 10.1109/SCED.2007.384026
DO - 10.1109/SCED.2007.384026
M3 - Conference contribution
AN - SCOPUS:35148842629
SN - 1424408687
SN - 9781424408689
T3 - 2007 Spanish Conference on Electron Devices, Proceedings
SP - 197
EP - 200
BT - 2007 Spanish Conference on Electron Devices, Proceedings
T2 - 2007 Spanish Conference on Electron Devices, SCED
Y2 - 31 January 2007 through 2 February 2007
ER -