β -Ga2O3FinFETs with ultra-low hysteresis by plasma-free metal-assisted chemical etching

Hsien Chih Huang; Zhongjie Ren; A. F.M. Anhar Uddin Bhuiyan; Zixuan Feng; Zhendong Yang; Xixi Luo; Alex Q. Huang; Andrew Green; Kelson Chabak; Hongping Zhao; Xiuling Li

doi:10.1063/5.0096490

β -Ga₂O₃FinFETs with ultra-low hysteresis by plasma-free metal-assisted chemical etching

Hsien Chih Huang, Zhongjie Ren, A. F.M. Anhar Uddin Bhuiyan, Zixuan Feng, Zhendong Yang, Xixi Luo, Alex Q. Huang, Andrew Green, Kelson Chabak, Hongping Zhao, Xiuling Li

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

In this work, β-Ga2O3 fin field-effect transistors (FinFETs) with metalorganic chemical vapor deposition grown epitaxial Si-doped channel layer on (010) semi-insulating β-Ga2O3 substrates are demonstrated. β-Ga2O3 fin channels with smooth sidewalls are produced by the plasma-free metal-assisted chemical etching (MacEtch) method. A specific on-resistance (Ron,sp) of 6.5 mω·cm2 and a 370 V breakdown voltage are achieved. In addition, these MacEtch-formed FinFETs demonstrate DC transfer characteristics with near zero (9.7 mV) hysteresis. The effect of channel orientation on threshold voltage, subthreshold swing, hysteresis, and breakdown voltages is also characterized. The FinFET with channel perpendicular to the [102] direction is found to exhibit the lowest subthreshold swing and hysteresis.

Original language	English (US)
Article number	052102
Journal	Applied Physics Letters
Volume	121
Issue number	5
DOIs	https://doi.org/10.1063/5.0096490
State	Published - Aug 1 2022

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/5.0096490

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Cite this

@article{b968d4512a664d1d834c31b66ec54657,

title = "β -Ga2O3FinFETs with ultra-low hysteresis by plasma-free metal-assisted chemical etching",

abstract = "In this work, β-Ga2O3 fin field-effect transistors (FinFETs) with metalorganic chemical vapor deposition grown epitaxial Si-doped channel layer on (010) semi-insulating β-Ga2O3 substrates are demonstrated. β-Ga2O3 fin channels with smooth sidewalls are produced by the plasma-free metal-assisted chemical etching (MacEtch) method. A specific on-resistance (Ron,sp) of 6.5 mω·cm2 and a 370 V breakdown voltage are achieved. In addition, these MacEtch-formed FinFETs demonstrate DC transfer characteristics with near zero (9.7 mV) hysteresis. The effect of channel orientation on threshold voltage, subthreshold swing, hysteresis, and breakdown voltages is also characterized. The FinFET with channel perpendicular to the [102] direction is found to exhibit the lowest subthreshold swing and hysteresis.",

author = "Huang, {Hsien Chih} and Zhongjie Ren and {Anhar Uddin Bhuiyan}, {A. F.M.} and Zixuan Feng and Zhendong Yang and Xixi Luo and Huang, {Alex Q.} and Andrew Green and Kelson Chabak and Hongping Zhao and Xiuling Li",

note = "This material is based upon work supported in part by the National Science Foundation under Grant Nos. 1809946 and 1810041.",

year = "2022",

month = aug,

day = "1",

doi = "10.1063/5.0096490",

language = "English (US)",

volume = "121",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - β -Ga2O3FinFETs with ultra-low hysteresis by plasma-free metal-assisted chemical etching

AU - Huang, Hsien Chih

AU - Ren, Zhongjie

AU - Anhar Uddin Bhuiyan, A. F.M.

AU - Feng, Zixuan

AU - Yang, Zhendong

AU - Luo, Xixi

AU - Huang, Alex Q.

AU - Green, Andrew

AU - Chabak, Kelson

AU - Zhao, Hongping

AU - Li, Xiuling

N1 - This material is based upon work supported in part by the National Science Foundation under Grant Nos. 1809946 and 1810041.

PY - 2022/8/1

Y1 - 2022/8/1

N2 - In this work, β-Ga2O3 fin field-effect transistors (FinFETs) with metalorganic chemical vapor deposition grown epitaxial Si-doped channel layer on (010) semi-insulating β-Ga2O3 substrates are demonstrated. β-Ga2O3 fin channels with smooth sidewalls are produced by the plasma-free metal-assisted chemical etching (MacEtch) method. A specific on-resistance (Ron,sp) of 6.5 mω·cm2 and a 370 V breakdown voltage are achieved. In addition, these MacEtch-formed FinFETs demonstrate DC transfer characteristics with near zero (9.7 mV) hysteresis. The effect of channel orientation on threshold voltage, subthreshold swing, hysteresis, and breakdown voltages is also characterized. The FinFET with channel perpendicular to the [102] direction is found to exhibit the lowest subthreshold swing and hysteresis.

AB - In this work, β-Ga2O3 fin field-effect transistors (FinFETs) with metalorganic chemical vapor deposition grown epitaxial Si-doped channel layer on (010) semi-insulating β-Ga2O3 substrates are demonstrated. β-Ga2O3 fin channels with smooth sidewalls are produced by the plasma-free metal-assisted chemical etching (MacEtch) method. A specific on-resistance (Ron,sp) of 6.5 mω·cm2 and a 370 V breakdown voltage are achieved. In addition, these MacEtch-formed FinFETs demonstrate DC transfer characteristics with near zero (9.7 mV) hysteresis. The effect of channel orientation on threshold voltage, subthreshold swing, hysteresis, and breakdown voltages is also characterized. The FinFET with channel perpendicular to the [102] direction is found to exhibit the lowest subthreshold swing and hysteresis.

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