@inproceedings{caf4880ec357402f91fbdf68d9c8981d,
title = "β-Ga2O3FinFETs by MacEtch: temperature dependent I-V characteristics",
abstract = "The high temperature performance of electronic devices using the emerging material, \beta-Ga2O3, is important for the high-power applications under extreme environments. In this work, the high aspect-ratio \beta-Ga2O3 FinFETs were tested above room temperature up to 298°C in vacuum for the first time. The hysteresis remained relatively stable (0.1 ∼ 0.35 V) for the 50°C to 150 °C measurements while it was exponentially increased when the temperature exceeded 150 °C and eventually reached 4.59V at 298°C. In addition, the specific on-resistance (R{on, sp}) and subthreshold swing (SS) increased gradually with high temperature. This high temperature studies performed here can contribute to the future development of high performance 3-dimensional \beta-Ga2O3 electron devices.",
author = "Zhongjie Ren and Huang, {Hsien Chih} and Hanwool Lee and Clarence Chan and Roberts, {Henry C.} and Xihang Wu and Aadil Wassem and Wenjuan Zhu and Xiuling Li",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 Device Research Conference, DRC 2023 ; Conference date: 25-06-2023 Through 28-06-2023",
year = "2023",
doi = "10.1109/DRC58590.2023.10186924",
language = "English (US)",
series = "Device Research Conference - Conference Digest, DRC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2023 Device Research Conference, DRC 2023",
address = "United States",
}