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Research Output

1991

Nonbulk convergence of solvent spectral shifts in doped molecular clusters

Li, X., Hahn, M. Y., El-Shall, M. S. & Whetten, R. L., Jan 1 1991, In : Journal of physical chemistry. 95, 22, p. 8524-8528 5 p.

Research output: Contribution to journalArticle

Spectroscopic signatures of structural aufbau in (benzene)n; n=7-19

Easter, D. C., Li, X. & Whetten, R. L., Jan 1 1991, In : The Journal of Chemical Physics. 95, 9, p. 6362-6370 9 p.

Research output: Contribution to journalArticle

1992

Complete statistical thermodynamics of the cluster solid-liquid transition

Cheng, H. P., Li, X., Whetten, R. L. & Berry, R. S., Jan 1 1992, In : Physical Review A. 46, 2, p. 791-800 10 p.

Research output: Contribution to journalArticle

Photon-stimulated ejection of atoms from alkali-halide nanocrystals

Li, X., Beck, R. D. & Whetten, R. L., Jan 1 1992, In : Physical review letters. 68, 23, p. 3420-3423 4 p.

Research output: Contribution to journalArticle

Stability islands for doubly charged clusters below the kinetic critical size

Li, X. & Whetten, R. L., Aug 28 1992, In : Chemical Physics Letters. 196, 6, p. 535-540 6 p.

Research output: Contribution to journalArticle

1993

Ultraviolet absorption bands of [Csn+1In]+ (n<14) clusters

Li, X. & Whetten, R. L., Mar 1 1993, In : Zeitschrift für Physik D Atoms, Molecules and Clusters. 26, 1, p. 198-200 3 p.

Research output: Contribution to journalArticle

Ultraviolet absorption bands of ionic compound clusters: Onset of crystalline structures in [Csn+1In]+, n=1-13

Li, X. & Whetten, R. L., Jan 1 1993, In : The Journal of Chemical Physics. 98, 8, p. 6170-6175 6 p.

Research output: Contribution to journalArticle

1995

A new buffer layer for MOCVD growth of GaN on sapphire

Li, X., Forbes, D. V., Gu, S. Q., Turnbull, D. A., Bishop, S. G. & Coleman, J. J., Nov 1 1995, In : Journal of Electronic Materials. 24, 11, p. 1711-1714 4 p.

Research output: Contribution to journalArticle

1996

Alkylation of Si surfaces using a two-step halogenation/Grignard route

Bansal, A., Li, X., Lauermann, I., Lewis, N. S., Yi, S. I. & Weinberg, W. H., Jul 31 1996, In : Journal of the American Chemical Society. 118, 30, p. 7225-7226 2 p.

Research output: Contribution to journalArticle

Correlation of surface morphology and optical properties of GaN by conventional and selective-area MOCVD

Li, X., Jones, A. M., Roh, S. D., Turnbull, D. A., Reuter, E. E., Gu, S. Q., Bishop, S. G. & Coleman, J. J., Jan 1 1996, In : Materials Research Society Symposium - Proceedings. 395, p. 943-948 6 p.

Research output: Contribution to journalConference article

Effect of e-beam irradiation on a p-n junction GaN light emitting diode

Li, X., Gu, S. Q., Reuter, E. E., Verdeyen, J. T., Bishop, S. G. & Coleman, J. J., Sep 1 1996, In : Journal of Applied Physics. 80, 5, p. 2687-2690 4 p.

Research output: Contribution to journalArticle

Time-dependent study of low energy electron beam irradiation of Mg-doped GaN grown by metalorganic chemical vapor deposition

Li, X. & Coleman, J. J., Sep 9 1996, In : Applied Physics Letters. 69, 11, p. 1605-1607 3 p.

Research output: Contribution to journalArticle

1997

Characteristics of GaN stripes grown by selective-area metalorganic chemical vapor deposition

Li, X., Jones, A. M., Roh, S. D., Turnbull, D. A., Bishop, S. G. & Coleman, J. J., Mar 1997, In : Journal of Electronic Materials. 26, 3, p. 306-310 5 p.

Research output: Contribution to journalArticle

Characterization of As-grown and ion-implanted GaN by photoluminescence and photoluminescence excitation spectroscopy

Kim, S., Rhee, S. J., Turnbull, D. A., Reuter, E. E., Li, X., Coleman, J. J. & Bishop, S. G., Jan 1 1997, In : LEOS Summer Topical Meeting. p. 52-53 2 p.

Research output: Contribution to journalConference article

Depth-resolved and excitation power dependent cathodoluminescence study of GaN films grown by metalorganic chemical vapor deposition

Li, X. & Coleman, J. J., Jan 27 1997, In : Applied Physics Letters. 70, 4, p. 438-440 3 p.

Research output: Contribution to journalArticle

Observation of multiple Er3+ sites in Er-implanted GaN by site-selective photoluminescence excitation spectroscopy

Kim, S., Rhee, S. J., Turnbull, D. A., Reuter, E. E., Li, X., Coleman, J. J. & Bishop, S. G., Jul 14 1997, In : Applied Physics Letters. 71, 2, p. 231-233 3 p.

Research output: Contribution to journalArticle

On the incorporation of arsenic (As) in GaN films by conventional MOCVD

Li, X., Kim, S., Bishop, S. G. & Coleman, J. J., Jan 1 1997, In : LEOS Summer Topical Meeting. 1 p.

Research output: Contribution to journalConference article

Photoluminescence quenching spectroscopy of trap-mediated Er3+ excitation mechanisms in Er-implanted GaN

Rhee, S. J., Kim, S., Li, X., Coleman, J. J. & Bishop, S. G., Dec 1 1997, In : Materials Research Society Symposium - Proceedings. 482, p. 667-672 6 p.

Research output: Contribution to journalConference article

Site-selective photoluminescence excitation and photoluminescence spectroscopy of Er-implanted wurtzite GaN

Kim, S., Rhee, S. J., Turnbull, D. A., Li, X., Coleman, J. J. & Bishop, S. G., Jan 1 1997, In : Materials Research Society Symposium - Proceedings. 468, p. 131-136 6 p.

Research output: Contribution to journalConference article

Surface photoabsorption monitoring of the growth of GaAs and InGaAs at 650°C by MOCVD

Kim, Y. D., Nakamura, F., Yoon, E., Forbes, D. V., Li, X. & Coleman, J. J., Oct 1997, In : Journal of Electronic Materials. 26, 10, p. 1164-1168 5 p.

Research output: Contribution to journalArticle

Trap-mediated excitation of Er3+ photoluminescence in Er-implanted GaN

Kim, S., Rhee, S. J., Turnbull, D. A., Li, X., Coleman, J. J., Bishop, S. G. & Klein, P. B., Nov 3 1997, In : Applied Physics Letters. 71, 18, p. 2662-2664 3 p.

Research output: Contribution to journalArticle

1998

Excitation mechanisms of multiple Er3+ sites in Er-Implanted GaN

Kim, S., Rhee, S. J., Li, X., Coleman, J. J., Bishop, S. G. & Klein, P. B., Apr 1998, In : Journal of Electronic Materials. 27, 4, p. 246-254 9 p.

Research output: Contribution to journalArticle

GaN epitaxial lateral overgrowth and optical characterization

Li, X., Bishop, S. G. & Coleman, J. J., Dec 1 1998, In : Applied Physics Letters. 73, 9, p. 1179-1181 3 p.

Research output: Contribution to journalArticle

Photoluminescence and photoluminescence excitation spectroscopy of multiple sites in Nd-implanted GaN

Kim, S., Rhee, S., Li, X., Coleman, J. & Bishop, S., Jan 1 1998, In : Physical Review B - Condensed Matter and Materials Physics. 57, 23, p. 14588-14591 4 p.

Research output: Contribution to journalArticle

The incorporation of arsenic in GaN by metalorganic chemical vapor deposition

Li, X., Kim, S., Reuter, E. E., Bishop, S. G. & Coleman, J. J., Dec 1 1998, In : Applied Physics Letters. 72, 16, p. 1990-1992 3 p.

Research output: Contribution to journalArticle

1999

Annealing studies of photoluminescence spectra from multiple Er3+ centers in Er-implanted GaN

Kim, S., Rhee, S. J., Li, X., Coleman, J. J. & Bishop, S. G., Mar 1999, In : Journal of Electronic Materials. 28, 3, p. 266-274 9 p.

Research output: Contribution to journalConference article

GaN: From selective area to epitaxial lateral overgrowth

Li, X., Bishop, S. G. & Coleman, J. J., Dec 1 1999, In : MRS Internet Journal of Nitride Semiconductor Research. 4, SUPPL. 1

Research output: Contribution to journalArticle

GaN: from selective area to epitaxial lateral overgrowth

Li, X., Bishop, S. G. & Coleman, J. J., Dec 1 1999, In : Materials Research Society Symposium - Proceedings. 537

Research output: Contribution to journalConference article

Impurity states are the origin of yellow-band emission in GaN structures produced by epitaxial lateral overgrowth

Li, X., Bohn, P. W. & Coleman, J. J., Dec 1 1999, In : Applied Physics Letters. 75, 26, p. 4049-4051 3 p.

Research output: Contribution to journalArticle

Photoluminescence and photoluminescence excitation spectroscopy of in situ Er-doped and Er-implanted GaN films grown by hydride vapor phase epitaxy

Kim, S., Li, X., Coleman, J. J., Zhang, R., Hansen, D. M., Kuech, T. F. & Bishop, S. G., Dec 1 1999, In : MRS Internet Journal of Nitride Semiconductor Research. 4, SUPPL. 1, p. 7d

Research output: Contribution to journalArticle

Photoluminescence and photoluminescence excitation spectroscopy of in situ Er-doped and Er-implanted GaN films grown by hydride vapor phase epitaxy

Kim, S., Li, X., Coleman, J. J., Zhang, R., Hansen, D. M., Kuech, T. F. & Bishop, S. G., Dec 1 1999, In : Materials Research Society Symposium - Proceedings. 537, p. G11.4

Research output: Contribution to journalConference article

2000

Arsenic oxide microcrystals in anodically processed GaAs electrochemical growth, spectroscopy, and morphology

Li, X. & Bohn, P. W., May 1 2000, In : Journal of the Electrochemical Society. 147, 5, p. 1740-1746 7 p.

Research output: Contribution to journalArticle

Metal-assisted chemical etching in HF/H2O2 produces porous silicon

Li, X. & Bonn, P. W., Oct 16 2000, In : Applied Physics Letters. 77, 16, p. 2572-2574 3 p.

Research output: Contribution to journalArticle

Selective enhancement of 1540 nm Er3+ emission centers in Er-implanted GaN by Mg codoping

Kim, S., Rhee, S. J., Li, X., Coleman, J. J. & Bishop, S. G., Apr 24 2000, In : Applied Physics Letters. 76, 17, p. 2403-2405 3 p.

Research output: Contribution to journalArticle

Spatially resolved band-edge emission from partially coalesced GaN pyramids prepared by epitaxial lateral overgrowth

Li, X., Bohn, P. W., Kim, J., White, J. O. & Coleman, J. J., May 22 2000, In : Applied Physics Letters. 76, 21, p. 3031-3033 3 p.

Research output: Contribution to journalArticle

2001

Effects of material growth technique and Mg doping on Er3+ photoluminescence in Er-implanted GaN

Kim, S., Henry, R. L., Wickenden, A. E., Koleske, D. D., Rhee, S. J., White, J. O., Myoung, J. M., Kim, K., Li, X., Coleman, J. J. & Bishop, S. G., Jul 1 2001, In : Journal of Applied Physics. 90, 1, p. 252-259 8 p.

Research output: Contribution to journalArticle

Experimental factors controlling analyte ion generation in laser desorption/ionization mass spectrometry on porous silicon

Kruse, R. A., Li, X., Bohn, P. W. & Sweedler, J. V., Aug 1 2001, In : Analytical chemistry. 73, 15, p. 3639-3645 7 p.

Research output: Contribution to journalArticle

Spectroscopic studies of the modification of crystalline si(111) surfaces with covalently-attached alkyl chains using a chlorination/alkylation method

Bansal, A., Li, X., Yi, S. I., Weinberg, W. H. & Lewis, N. S., Oct 25 2001, In : Journal of Physical Chemistry B. 105, 42, p. 10266-10277 12 p.

Research output: Contribution to journalArticle

Temperature dependence of photoluminescence spectra from multiple Er3+ sites in Er-implanted undoped and Mg-doped GaN

Kim, S., Rhee, S. J., White, J. O., Mitofsky, A. M., Li, X., Papen, G. C., Coleman, J. J. & Bishop, S. G., Apr 24 2001, In : Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 81, 1-3, p. 136-139 4 p.

Research output: Contribution to journalArticle

2002

In-plane bandgap control in porous GaN through electroless wet chemical etching

Li, X., Kim, Y. W., Bohn, P. W. & Adesida, I., Feb 11 2002, In : Applied Physics Letters. 80, 6, p. 980-982 3 p.

Research output: Contribution to journalArticle

In-plane control of morphology and tunable photoluminescence in porous silicon produced by metal-assisted electroless chemical etching

Chattopadhyay, S., Li, X. & Bohn, P. W., May 1 2002, In : Journal of Applied Physics. 91, 9, p. 6134-6140 7 p.

Research output: Contribution to journalArticle

2005

Fabrication and characterization of InGaP/GaAs heterojunction bipolar transistors on GOI substrates

Thomas, S. G., Johnson, E. S., Tracy, C., Maniar, P., Li, X., Roof, B., Hartmann, Q. & Ahmari, D. A., Jul 1 2005, In : IEEE Electron Device Letters. 26, 7, p. 438-440 3 p.

Research output: Contribution to journalArticle

2006

Perspectives on the design and control of multiscale systems

Braatz, R. D., Alkire, R. C., Seebauer, E., Rusli, E., Gunawan, R., Drews, T. O., Li, X. & He, Y., Mar 1 2006, In : Journal of Process Control. 16, 3, p. 193-204 12 p.

Research output: Contribution to journalArticle

2008

3D nanoscale pattern formation in porous silicon

Chun, I. S., Chow, E. K. & Li, X., Jan 1 2008, Conference on Lasers and Electro-Optics, CLEO 2008. Optical Society of America, (Optics InfoBase Conference Papers).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3D Nanoscale pattern formation in porous silicon

Chun, I. S., Chow, E. K. & Li, X., Sep 15 2008, 2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS. 4551902. (2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Controlled assembly and dispersion of strain-induced InGaAs/GaAs nanotubes

Chun, I. S. & Li, X., Jul 1 2008, In : IEEE Transactions on Nanotechnology. 7, 4, p. 493-495 3 p.

Research output: Contribution to journalArticle

Engineered large area fabrication of ordered InGaAs-GaAs nanotube arrays

Ik, S. C., Verma, V. B. & Li, X., Dec 1 2008, Nanotubes and Related Nanostructures. Vol. 1057. p. 12-17 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

InGaAs/GaAs 3D architecture formation by strain-induced self-rolling with lithographically defined rectangular stripe arrays

Chun, I. S., Verma, V. B., Elarde, V. C., Kim, S. W., Zuo, J-M., Coleman, J. J. & Li, X., Apr 1 2008, In : Journal of Crystal Growth. 310, 7-9, p. 2353-2358 6 p.

Research output: Contribution to journalArticle