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Research Output 1991 2019

1991

Nonbulk convergence of solvent spectral shifts in doped molecular clusters

Li, X., Hahn, M. Y., El-Shall, M. S. & Whetten, R. L., Jan 1 1991, In : Journal of physical chemistry. 95, 22, p. 8524-8528 5 p.

Research output: Contribution to journalArticle

molecular clusters
Molecules
shift
Benzene
liabilities

Spectroscopic signatures of structural aufbau in (benzene)n; n=7-19

Easter, D. C., Li, X. & Whetten, R. L., Jan 1 1991, In : The Journal of Chemical Physics. 95, 9, p. 6362-6370 9 p.

Research output: Contribution to journalArticle

Helium
Benzene
Ionization
Photons
benzene
1992

Complete statistical thermodynamics of the cluster solid-liquid transition

Cheng, H. P., Li, X., Whetten, R. L. & Berry, R. S., Jan 1 1992, In : Physical Review A. 46, 2, p. 791-800 10 p.

Research output: Contribution to journalArticle

thermodynamics
liquids
Boltzmann distribution
histograms
distribution functions

Photon-stimulated ejection of atoms from alkali-halide nanocrystals

Li, X., Beck, R. D. & Whetten, R. L., Jan 1 1992, In : Physical review letters. 68, 23, p. 3420-3423 4 p.

Research output: Contribution to journalArticle

alkali halides
ejection
nanocrystals
photons
surface defects

Stability islands for doubly charged clusters below the kinetic critical size

Li, X. & Whetten, R. L., Aug 28 1992, In : Chemical Physics Letters. 196, 6, p. 535-540 6 p.

Research output: Contribution to journalArticle

Alkali halides
Photons
Irradiation
Kinetics
kinetics
1993

Ultraviolet absorption bands of [Csn+1In]+ (n<14) clusters

Li, X. & Whetten, R. L., Mar 1 1993, In : Zeitschrift für Physik D Atoms, Molecules and Clusters. 26, 1, p. 198-200 3 p.

Research output: Contribution to journalArticle

ultraviolet absorption
charge transfer
absorption spectra
alkali halides
optical spectrum

Ultraviolet absorption bands of ionic compound clusters: Onset of crystalline structures in [Csn+1In]+, n=1-13

Li, X. & Whetten, R. L., Jan 1 1993, In : The Journal of Chemical Physics. 98, 8, p. 6170-6175 6 p.

Research output: Contribution to journalArticle

ultraviolet absorption
Nanocrystals
Absorption spectra
Crystalline materials
absorption spectra
1995

A new buffer layer for MOCVD growth of GaN on sapphire

Li, X., Forbes, D. V., Gu, S. Q., Turnbull, D. A., Bishop, S. G. & Coleman, J. J., Nov 1 1995, In : Journal of Electronic Materials. 24, 11, p. 1711-1714 4 p.

Research output: Contribution to journalArticle

Aluminum Oxide
Metallorganic chemical vapor deposition
Buffer layers
Sapphire
metalorganic chemical vapor deposition
1996

Alkylation of Si surfaces using a two-step halogenation/Grignard route

Bansal, A., Li, X., Lauermann, I., Lewis, N. S., Yi, S. I. & Weinberg, W. H., Jul 31 1996, In : Journal of the American Chemical Society. 118, 30, p. 7225-7226 2 p.

Research output: Contribution to journalArticle

Halogenation
Alkylation

Correlation of surface morphology and optical properties of GaN by conventional and selective-area MOCVD

Li, X., Jones, A. M., Roh, S. D., Turnbull, D. A., Reuter, E. E., Gu, S. Q., Bishop, S. G. & Coleman, J. J., Jan 1 1996, In : Materials Research Society Symposium - Proceedings. 395, p. 943-948 6 p.

Research output: Contribution to journalConference article

Metallorganic chemical vapor deposition
Epitaxial growth
epitaxy
metalorganic chemical vapor deposition
Surface morphology

Effect of e-beam irradiation on a p-n junction GaN light emitting diode

Li, X., Gu, S. Q., Reuter, E. E., Verdeyen, J. T., Bishop, S. G. & Coleman, J. J., Sep 1 1996, In : Journal of Applied Physics. 80, 5, p. 2687-2690 4 p.

Research output: Contribution to journalArticle

junction diodes
p-n junctions
electroluminescence
light emitting diodes
irradiation

Time-dependent study of low energy electron beam irradiation of Mg-doped GaN grown by metalorganic chemical vapor deposition

Li, X. & Coleman, J. J., Sep 9 1996, In : Applied Physics Letters. 69, 11, p. 1605-1607 3 p.

Research output: Contribution to journalArticle

metalorganic chemical vapor deposition
electron beams
irradiation
annealing
energy
1997

Characteristics of GaN stripes grown by selective-area metalorganic chemical vapor deposition

Li, X., Jones, A. M., Roh, S. D., Turnbull, D. A., Bishop, S. G. & Coleman, J. J., Mar 1997, In : Journal of Electronic Materials. 26, 3, p. 306-310 5 p.

Research output: Contribution to journalArticle

Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
Cathodoluminescence
Aluminum Oxide
Substrates

Characterization of As-grown and ion-implanted GaN by photoluminescence and photoluminescence excitation spectroscopy

Kim, S., Rhee, S. J., Turnbull, D. A., Reuter, E. E., Li, X., Coleman, J. J. & Bishop, S. G., Jan 1 1997, In : LEOS Summer Topical Meeting. p. 52-53 2 p.

Research output: Contribution to journalConference article

Photoluminescence
Spectroscopy
photoluminescence
Ions
spectroscopy

Depth-resolved and excitation power dependent cathodoluminescence study of GaN films grown by metalorganic chemical vapor deposition

Li, X. & Coleman, J. J., Jan 27 1997, In : Applied Physics Letters. 70, 4, p. 438-440 3 p.

Research output: Contribution to journalArticle

cathodoluminescence
metalorganic chemical vapor deposition
luminescence
excitation
spectroscopy

Observation of multiple Er3+ sites in Er-implanted GaN by site-selective photoluminescence excitation spectroscopy

Kim, S., Rhee, S. J., Turnbull, D. A., Reuter, E. E., Li, X., Coleman, J. J. & Bishop, S. G., Jul 14 1997, In : Applied Physics Letters. 71, 2, p. 231-233 3 p.

Research output: Contribution to journalArticle

photoluminescence
spectroscopy
excitation
metalorganic chemical vapor deposition
optical absorption

On the incorporation of arsenic (As) in GaN films by conventional MOCVD

Li, X., Kim, S., Bishop, S. G. & Coleman, J. J., Jan 1 1997, In : LEOS Summer Topical Meeting. 1 p.

Research output: Contribution to journalConference article

Metallorganic chemical vapor deposition
Arsenic
arsenic
metalorganic chemical vapor deposition
Excitons

Photoluminescence quenching spectroscopy of trap-mediated Er3+ excitation mechanisms in Er-implanted GaN

Rhee, S. J., Kim, S., Li, X., Coleman, J. J. & Bishop, S. G., Dec 1 1997, In : Materials Research Society Symposium - Proceedings. 482, p. 667-672 6 p.

Research output: Contribution to journalConference article

Quenching
Photoluminescence
quenching
traps
Spectroscopy

Site-selective photoluminescence excitation and photoluminescence spectroscopy of Er-implanted wurtzite GaN

Kim, S., Rhee, S. J., Turnbull, D. A., Li, X., Coleman, J. J. & Bishop, S. G., Jan 1 1997, In : Materials Research Society Symposium - Proceedings. 468, p. 131-136 6 p.

Research output: Contribution to journalConference article

Photoluminescence spectroscopy
wurtzite
Photoluminescence
photoluminescence
spectroscopy

Surface photoabsorption monitoring of the growth of GaAs and InGaAs at 650°C by MOCVD

Kim, Y. D., Nakamura, F., Yoon, E., Forbes, D. V., Li, X. & Coleman, J. J., Oct 1997, In : Journal of Electronic Materials. 26, 10, p. 1164-1168 5 p.

Research output: Contribution to journalArticle

Metallorganic chemical vapor deposition
photoabsorption
Semiconductor quantum wells
metalorganic chemical vapor deposition
Photoluminescence

Trap-mediated excitation of Er 3+ photoluminescence in Er-implanted GaN

Kim, S., Rhee, S. J., Turnbull, D. A., Li, X., Coleman, J. J., Bishop, S. G. & Klein, P. B., Nov 3 1997, In : Applied Physics Letters. 71, 18, p. 2662-2664 3 p.

Research output: Contribution to journalArticle

traps
photoluminescence
excitation
pumping
quenching
1998

Excitation mechanisms of multiple Er 3+ sites in Er-Implanted GaN

Kim, S., Rhee, S. J., Li, X., Coleman, J. J., Bishop, S. G. & Klein, P. B., Apr 1998, In : Journal of Electronic Materials. 27, 4, p. 246-254 9 p.

Research output: Contribution to journalArticle

Photoluminescence
photoluminescence
Absorption spectra
excitation
Defects

GaN epitaxial lateral overgrowth and optical characterization

Li, X., Bishop, S. G. & Coleman, J. J., Dec 1 1998, In : Applied Physics Letters. 73, 9, p. 1179-1181 3 p.

Research output: Contribution to journalArticle

cathodoluminescence
metalorganic chemical vapor deposition
atmospheric pressure
excitons
optical properties

Photoluminescence and photoluminescence excitation spectroscopy of multiple sites in Nd-implanted GaN

Kim, S., Rhee, S., Li, X., Coleman, J. & Bishop, S., Jan 1 1998, In : Physical Review B - Condensed Matter and Materials Physics. 57, 23, p. 14588-14591 4 p.

Research output: Contribution to journalArticle

Photoluminescence
Spectroscopy
photoluminescence
spectroscopy
excitation

The incorporation of arsenic in GaN by metalorganic chemical vapor deposition

Li, X., Kim, S., Reuter, E. E., Bishop, S. G. & Coleman, J. J., Dec 1 1998, In : Applied Physics Letters. 72, 16, p. 1990-1992 3 p.

Research output: Contribution to journalArticle

arsenic
metalorganic chemical vapor deposition
cathodoluminescence
luminescence
impurities
1999

Annealing studies of photoluminescence spectra from multiple Er3+ centers in Er-implanted GaN

Kim, S., Rhee, S. J., Li, X., Coleman, J. J. & Bishop, S. G., Mar 1999, In : Journal of Electronic Materials. 28, 3, p. 266-274 9 p.

Research output: Contribution to journalConference article

Photoluminescence
Annealing
photoluminescence
annealing
Energy gap

GaN: from selective area to epitaxial lateral overgrowth

Li, X., Bishop, S. G. & Coleman, J. J., Dec 1 1999, In : Materials Research Society Symposium - Proceedings. 537

Research output: Contribution to journalConference article

Cathodoluminescence
cathodoluminescence
Topography
topography
Optical properties

GaN: From selective area to epitaxial lateral overgrowth

Li, X., Bishop, S. G. & Coleman, J. J., Dec 1 1999, In : MRS Internet Journal of Nitride Semiconductor Research. 4, SUPPL. 1

Research output: Contribution to journalArticle

Cathodoluminescence
Topography
Optical properties
Imaging techniques
Substrates

Impurity states are the origin of yellow-band emission in GaN structures produced by epitaxial lateral overgrowth

Li, X., Bohn, P. W. & Coleman, J. J., Dec 1 1999, In : Applied Physics Letters. 75, 26, p. 4049-4051 3 p.

Research output: Contribution to journalArticle

impurities
pyramids
light emission
ridges
apexes

Photoluminescence and photoluminescence excitation spectroscopy of in situ Er-doped and Er-implanted GaN films grown by hydride vapor phase epitaxy

Kim, S., Li, X., Coleman, J. J., Zhang, R., Hansen, D. M., Kuech, T. F. & Bishop, S. G., Dec 1 1999, In : Materials Research Society Symposium - Proceedings. 537

Research output: Contribution to journalArticle

Vapor phase epitaxy
Hydrides
vapor phase epitaxy
hydrides
Photoluminescence

Photoluminescence and photoluminescence excitation spectroscopy of in situ Er-doped and Er-implanted GaN films grown by hydride vapor phase epitaxy

Kim, S., Li, X., Coleman, J. J., Zhang, R., Hansen, D. M., Kuech, T. F. & Bishop, S. G., Dec 1 1999, In : MRS Internet Journal of Nitride Semiconductor Research. 4, SUPPL. 1

Research output: Contribution to journalArticle

Vapor phase epitaxy
Hydrides
Photoluminescence
Spectroscopy
Organic Chemicals
microcrystals
arsenic
luminescence
oxides
x ray analysis
2000

Arsenic oxide microcrystals in anodically processed GaAs electrochemical growth, spectroscopy, and morphology

Li, X. & Bohn, P. W., May 1 2000, In : Journal of the Electrochemical Society. 147, 5, p. 1740-1746 7 p.

Research output: Contribution to journalArticle

Microcrystals
microcrystals
Arsenic
arsenic
Oxides

Metal-assisted chemical etching in HF/H2O2 produces porous silicon

Li, X. & Bonn, P. W., Oct 16 2000, In : Applied Physics Letters. 77, 16, p. 2572-2574 3 p.

Research output: Contribution to journalArticle

porous silicon
etching
metals
metal coatings
submerging

Selective enhancement of 1540 nm Er3+ emission centers in Er-implanted GaN by Mg codoping

Kim, S., Rhee, S. J., Li, X., Coleman, J. J. & Bishop, S. G., Apr 24 2000, In : Applied Physics Letters. 76, 17, p. 2403-2405 3 p.

Research output: Contribution to journalArticle

photoluminescence
augmentation
excitation
traps
pumps

Spatially resolved band-edge emission from partially coalesced GaN pyramids prepared by epitaxial lateral overgrowth

Li, X., Bohn, P. W., Kim, J., White, J. O. & Coleman, J. J., May 22 2000, In : Applied Physics Letters. 76, 21, p. 3031-3033 3 p.

Research output: Contribution to journalArticle

pyramids
cathodoluminescence
metalorganic chemical vapor deposition
luminescence
Raman spectra
2001
Porous silicon
Silicon
silicon
Amplification
amplification

Effects of material growth technique and Mg doping on Er3+ photoluminescence in Er-implanted GaN

Kim, S., Henry, R. L., Wickenden, A. E., Koleske, D. D., Rhee, S. J., White, J. O., Myoung, J. M., Kim, K., Li, X., Coleman, J. J. & Bishop, S. G., Jul 1 2001, In : Journal of Applied Physics. 90, 1, p. 252-259 8 p.

Research output: Contribution to journalArticle

photoluminescence
excitation
defects
vapor phase epitaxy
hydrides

Experimental factors controlling analyte ion generation in laser desorption/ionization mass spectrometry on porous silicon

Kruse, R. A., Li, X., Bohn, P. W. & Sweedler, J. V., Aug 1 2001, In : Analytical chemistry. 73, 15, p. 3639-3645 7 p.

Research output: Contribution to journalArticle

Porous silicon
Ionization
Mass spectrometry
Desorption
Ions

Spectroscopic studies of the modification of crystalline si(111) surfaces with covalently-attached alkyl chains using a chlorination/alkylation method

Bansal, A., Li, X., Yi, S. I., Weinberg, W. H. & Lewis, N. S., Oct 25 2001, In : Journal of Physical Chemistry B. 105, 42, p. 10266-10277 12 p.

Research output: Contribution to journalArticle

chlorination
Chlorination
Halogenation
alkylation
Alkylation

Temperature dependence of photoluminescence spectra from multiple Er3+ sites in Er-implanted undoped and Mg-doped GaN

Kim, S., Rhee, S. J., White, J. O., Mitofsky, A. M., Li, X., Papen, G. C., Coleman, J. J. & Bishop, S. G., Apr 24 2001, In : Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 81, 1-3, p. 136-139 4 p.

Research output: Contribution to journalArticle

Photoluminescence
photoluminescence
temperature dependence
Photoluminescence spectroscopy
Temperature
2002

In-plane bandgap control in porous GaN through electroless wet chemical etching

Li, X., Kim, Y. W., Bohn, P. W. & Adesida, I., Feb 11 2002, In : Applied Physics Letters. 80, 6, p. 980-982 3 p.

Research output: Contribution to journalArticle

etching
cathodoluminescence
light emission
reagents
wire

In-plane control of morphology and tunable photoluminescence in porous silicon produced by metal-assisted electroless chemical etching

Chattopadhyay, S., Li, X. & Bohn, P. W., May 1 2002, In : Journal of Applied Physics. 91, 9, p. 6134-6140 7 p.

Research output: Contribution to journalArticle

porous silicon
etching
luminescence
photoluminescence
metals
2005

Fabrication and characterization of InGaP/GaAs heterojunction bipolar transistors on GOI substrates

Thomas, S. G., Johnson, E. S., Tracy, C., Maniar, P., Li, X., Roof, B., Hartmann, Q. & Ahmari, D. A., Jul 1 2005, In : IEEE Electron Device Letters. 26, 7, p. 438-440 3 p.

Research output: Contribution to journalArticle

Germanium
Heterojunction bipolar transistors
Fabrication
Substrates
Epitaxial layers
2006

Perspectives on the design and control of multiscale systems

Braatz, R. D., Alkire, R. C., Seebauer, E., Rusli, E., Gunawan, R., Drews, T. O., Li, X. & He, Y., Mar 1 2006, In : Journal of Process Control. 16, 3, p. 193-204 12 p.

Research output: Contribution to journalArticle

Length Scale
Ab Initio Calculations
Parameter Sensitivity
Bayesian Estimation
Experimental design
2008

3D nanoscale pattern formation in porous silicon

Chun, I. S., Chow, E. K. & Li, X., Jan 1 2008, Conference on Lasers and Electro-Optics, CLEO 2008. Optical Society of America, (Optics InfoBase Conference Papers).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Porous silicon
porous silicon
Metals
metals
Etching

3D Nanoscale pattern formation in porous silicon

Chun, I. S., Chow, E. K. & Li, X., Sep 15 2008, 2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS. 4551902. (2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Porous silicon
Metals
Etching
Processing

Controlled assembly and dispersion of strain-induced InGaAs/GaAs nanotubes

Chun, I. S. & Li, X., Jul 1 2008, In : IEEE Transactions on Nanotechnology. 7, 4, p. 493-495 3 p.

Research output: Contribution to journalArticle

Nanotubes
Substrates
Nanotechnology
Crystal orientation
Wheels

Engineered large area fabrication of ordered InGaAs-GaAs nanotube arrays

Ik, S. C., Verma, V. B. & Li, X., Dec 1 2008, Nanotubes and Related Nanostructures. Vol. 1057. p. 12-17 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nanotubes
nanotubes
Semiconductor materials
Fabrication
fabrication

InGaAs/GaAs 3D architecture formation by strain-induced self-rolling with lithographically defined rectangular stripe arrays

Chun, I. S., Verma, V. B., Elarde, V. C., Kim, S. W., Zuo, J-M., Coleman, J. J. & Li, X., Apr 1 2008, In : Journal of Crystal Growth. 310, 7-9, p. 2353-2358 6 p.

Research output: Contribution to journalArticle

Nanomechanics
Semiconductor materials
Nanophotonics
Nanoelectronics
Metallorganic chemical vapor deposition