Keyphrases
Metal-assisted Chemical Etching
89%
Self-rolled-up
56%
Nanowires
39%
Gallium Arsenide
37%
Metal-organic Chemical Vapor Deposition (MOCVD)
36%
GaAs Nanowires
33%
Microtube
29%
Strain-induced
25%
III-V
25%
Planar Nanowires
24%
Rolled-up
24%
SiNx
20%
High Aspect Ratio
19%
Chemical Etching
18%
Three-dimensional (3D)
17%
Er3+
16%
Photoluminescence
16%
Self-aligned
15%
Porous Silicon
15%
Ridge Waveguide
14%
Ga2O3
14%
Photoluminescence Spectra
14%
On chip
14%
Nanomembrane
13%
Optical Properties
13%
Self-rolling
13%
Nanowire Arrays
13%
Etching Rate
12%
Room Temperature
12%
III-V Nanowires
12%
Monolithically Integrated
12%
Inductors
12%
InGaAs
12%
Radio-frequency Integrated Circuit (RF IC)
11%
Nanostructures
11%
Semiconductors
11%
Miniaturization
11%
Photoluminescence Spectroscopy
11%
Silicon Nitride
10%
Silicon Nanowire Arrays
10%
Nanowire Growth
10%
Epitaxial
10%
NWFET
10%
GaN Films
10%
Semiconductor Nanowires
10%
3D Architecture
10%
Fabrication Methods
10%
Light-emitting Diodes
9%
Nanotechnology
9%
MOSFET
9%
Material Science
Nanowire
100%
Gallium Arsenide
73%
Silicon
55%
Nanocrystalline Material
36%
Epitaxy
30%
Electronic Circuit
29%
Film
27%
Photoluminescence
27%
Chemical Vapor Deposition
23%
Light-Emitting Diode
19%
Waveguide
18%
Field Effect Transistor
18%
Transistor
18%
Solar Cell
16%
Porous Silicon
15%
Density
14%
Quantum Dot
13%
Optical Property
13%
Heterojunction
13%
Indium Gallium Arsenide
13%
Capacitor
13%
Cathodoluminescence
12%
Nanotube
11%
Photonic Crystal
11%
Silicon Nitride
11%
Monolayers
10%
Metal-Oxide-Semiconductor Field-Effect Transistor
10%
Reactive Ion Etching
10%
Wet Etching
9%
Thin Films
9%
Conductive Film
9%
III-V Semiconductor
8%
Self Assembly
8%
Resonator
8%
Anisotropic Etching
7%
Crystalline Material
7%
Oxide Compound
7%
Electron Mobility
7%
Photovoltaics
7%
Capacitance
7%
Indium
7%
Nitride Compound
7%
Lithography
7%
Finite Element Method
6%
Doping (Additives)
6%
Aluminum Nitride
6%
Oxidant
6%
Heteroepitaxy
6%
Aluminium Gallium Arsenide
6%
Gallium
6%
Engineering
Nanowires
68%
Gallium Arsenide
51%
Microtube
29%
Chemical Vapor Deposition
19%
Vapor Deposition
19%
Radio Frequency
17%
Integrated Circuit
14%
Field-Effect Transistor
13%
Conductive
12%
Nitride
11%
Nanotube
11%
Light-Emitting Diode
10%
Metal-Oxide-Semiconductor Field-Effect Transistor
10%
Excitation Spectrum
10%
Membrane Technology
10%
Nanoscale
9%
Defects
9%
Solar Cell
8%
Indium Gallium Arsenide
8%
Rolling Direction
8%
Thin Films
8%
Energy Engineering
8%
Quantum Dot
7%
Cross Section
7%
Room Temperature
7%
Finite Element Method
6%
Quantum Well
6%
One Dimensional
6%
Power Electronics
6%
Metal Organic Chemical Vapor Deposition
6%
Photovoltaics
6%
Actuation
5%
Energy Gap
5%
Photonics
5%
Power Inductors
5%
High Aspect Ratio
5%
Silicon Solar Cell
5%
Terahertz
5%
Resistive
5%
Related Defect
5%
Internet of Things
5%
Cyber-Physical Systems
5%
Porous Silicon
5%