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Wenjuan Zhu

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  • 2024

    Modeling of Content addressable memory using 2D Reconfigurable Transistors

    Tunga, A., Kang, J., Zhao, Z., Shukla, A., Zhu, W. & Rakheja, S., 2024, DRC 2024 - 82nd Device Research Conference. Institute of Electrical and Electronics Engineers Inc., (Device Research Conference - Conference Digest, DRC).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • 2023

    High-Temperature Electronics Using β- Ga203 FETs and AIGaN/GaN HEMTs

    Islam, A. E., Grupen, M., Hughes, G., Popp, A., Sepelak, N. P., Leedy, K. D., Asel, T., Zhu, W., Miesle, A. T., Liddy, K. J., Neal, A., Poling, B., Lee, H., Dryden, D. M., Mou, S., Chabak, K., Walker, D. E., Crespo, A., Heller, E. & Green, A. J., 2023, NAECON 2023 - IEEE National Aerospace and Electronics Conference. Institute of Electrical and Electronics Engineers Inc., p. 263-268 6 p. (Proceedings of the IEEE National Aerospace Electronics Conference, NAECON).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • β-Ga2O3FinFETs by MacEtch: temperature dependent I-V characteristics

    Ren, Z., Huang, H. C., Lee, H., Chan, C., Roberts, H. C., Wu, X., Wassem, A., Zhu, W. & Li, X., 2023, 2023 Device Research Conference, DRC 2023. Institute of Electrical and Electronics Engineers Inc., (Device Research Conference - Conference Digest, DRC; vol. 2023-June).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • 2022

    Nanoscale Devices Based on Two-dimensional and Ferroelectric Materials

    Zhao, Z., Xu, K., Liu, J., Jiang, W., Ryu, H., Rakheja, S., Low, T. & Zhu, W., 2022, 2022 Device Research Conference, DRC 2022. Institute of Electrical and Electronics Engineers Inc., (Device Research Conference - Conference Digest, DRC; vol. 2022-June).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • 2019

    Ferroelectric Tunneling Junctions for Neurosynaptic Computing

    Ryu, H., Wu, H., Rao, F. & Zhu, W., Jun 2019, 2019 Device Research Conference, DRC 2019. Institute of Electrical and Electronics Engineers Inc., p. 191-192 2 p. 9046340. (Device Research Conference - Conference Digest, DRC; vol. 2019-June).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • 2018

    Ferroelectric aluminum-doped hafnium oxide for memory applications

    Ryu, H., Xu, K., Guo, J. & Zhu, W., Aug 20 2018, 2018 76th Device Research Conference, DRC 2018. Institute of Electrical and Electronics Engineers Inc., 8442244. (Device Research Conference - Conference Digest, DRC; vol. 2018-June).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • HetCore: TFET-CMOS hetero-Device architecture for CPUs and GPUs

    Gopireddy, B., Skarlatos, D., Zhu, W. & Torrellas, J., Jul 19 2018, Proceedings - 2018 ACM/IEEE 45th Annual International Symposium on Computer Architecture, ISCA 2018. Institute of Electrical and Electronics Engineers Inc., p. 802-815 14 p. 8416874. (Proceedings - International Symposium on Computer Architecture).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Nanoscale Devices Based on Two-dimensional Materials and Ferroelectric Materials

    Yao, Z., Ryu, H., Xu, K., Liu, J., Cai, Y., Yan, Y. & Zhu, W., Dec 5 2018, 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings. Tang, T.-A., Ye, F. & Jiang, Y.-L. (eds.). Institute of Electrical and Electronics Engineers Inc., 8564988. (2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • 2011

    Record high RF performance for epitaxial graphene transistors

    Wu, Y. Q., Farmer, D. B., Valdes-Garcia, A., Zhu, W. J., Jenkins, K. A., Dimitrakopoulos, C., Avouris, P. & Lin, Y. M., 2011, 2011 International Electron Devices Meeting, IEDM 2011. p. 23.8.1-23.8.3 6131601. (Technical Digest - International Electron Devices Meeting, IEDM).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • 2010

    Current transport, gate dielectrics and band gap engineering in graphene devices

    Zhu, W., Perebeinos, V., Neumayer, D., Freitag, M., Jenkins, K., Zhu, Y. & Avouris, P., 2010, ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. p. 1214-1217 4 p. 5667607. (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • 2008

    High performance and highly stable ultra-thin oxynitride for CMOS applications

    Zhu, W., Shepard, J., He, W., Ray, A., Ronsheim, P., Schepis, D., Mocuta, D. & Leobandung, E., 2008, ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. p. 223-226 4 p. 4734512. (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • 2006

    A comparison of electrical and physical properties of MOCVD hafnium silicate thin films deposited using various silicon precursors

    Jamison, P., Copel, M., Chudzik, M., Frank, M. M., Linder, B. P., Jammy, R. & Zhu, W., 2006, Gate Stack Scaling: Materials Selection, Role of Interfaces, and Reliability Implications. Materials Research Society, p. 95-99 5 p. (Materials Research Society Symposium Proceedings; vol. 917).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • 2005

    High performance 65 nm SOI technology with dual stress liner and low capacitance SRAM cell

    Leobandung, E., Nayakama, H., Mocuta, D., Miyamoto, K., Angyal, M., Meer, H. V., McStay, K., Ahsan, I., Allen, S., Azuma, A., Belyansky, M., Bentum, R. V., Cheng, J., Chidambarrao, D., Dirahoui, B., Fukasawa, M., Gerhardt, M., Gribelyuk, M., Halle, S. & Harifuchi, H. & 62 others, Harmon, D., Heaps-Nelson, J., Hichri, H., Ida, K., Inohara, M., Inoue, K., Jenkins, K., Kawamura, T., Kim, B., Ku, S. K., Kumar, M., Lane, S., Liebmann, L., Logan, R., Melville, I., Miyashita, K., Mocuta, A., O'Neil, P., Ng, M. F., Nogami, T., Nomura, A., Norris, C., Nowak, E., Ono, M., Panda, S., Penny, C., Radens, C., Ramachandran, R., Ray, A., Rhee, S. H., Ryan, D., Shinohara, T., Sudo, G., Sugaya, F., Strane, J., Tan, Y., Tsou, L., Wang, L., Wirbeleit, F., Wu, S., Yamashita, T., Yan, H., Ye, Q., Yoneyama, D., Zamdmer, N., Zhong, H., Zhu, H., Zhu, W., Agnello, P., Bukofsky, S., Bronner, G., Crabbé, E., Freeman, G., Huang, S. F., Ivers, T., Kuroda, H., McHerron, D., Pellerin, J., Toyoshima, Y., Subbanna, S., Kepler, N. & Su, L., 2005, 2005 Symposium on VLSI Technology, Digest of Technical Papers. p. 126-127 2 p. 1469238. (Digest of Technical Papers - Symposium on VLSI Technology; vol. 2005).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Synthesis and control of ultra thin gate oxides for the 90 and 65 NM nodes

    Shepard, J. F., Chou, A., Chudzik, M., Collins, C., Freiler, M., He, W., Kirsch, P., Loebl, A., Mo, R., Ronsheim, P., Rottenkolber, E. & Zhu, W., 2005, 13th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2005. p. 31-35 5 p. 1613681. (13th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2005).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • 2003

    Structure and stability of alternative gate dielectrics for Si CMOS

    Stemmer, S., Yang, Y., Li, Y., Foran, B., Lysaght, P. S., Gisby, J. A., Taylor, J. R., Streiffer, S. K., Fuoss, P., Seifert, S., Zhu, W. & Ma, T. P., 2003, 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 60-61 2 p. 1271995. (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • 2001

    Low-voltage, fast-programming P-channel flash memory with JVD tunneling nitride

    She, M., King, T. J., Hu, C., Zhu, W., Luo, Z., Han, J. P. & Ma, T. P., 2001, 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 641-644 4 p. 984603. (2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution