Material Science
Aluminum
15%
Aluminum Oxide
16%
Atomic Force Microscopy
8%
Band Offset
5%
Boron Nitride
7%
Capacitance
12%
Capacitor
14%
Carrier Concentration
10%
Charge Trapping
5%
Chemical Vapor Deposition
23%
Contact Resistance
7%
Density
27%
Dielectric Material
67%
Electron Energy Loss Spectrometry
6%
Electron Mobility
21%
Electronic Circuit
21%
Electronic Property
14%
Ferroelectric Material
64%
Ferroelectricity
12%
Field Effect Transistor
48%
Film
27%
Graphene
100%
Hafnium
41%
Heterojunction
41%
Metal-Oxide-Semiconductor Field-Effect Transistor
12%
Molybdenum
13%
Monolayers
46%
Multilayer
6%
Neuromorphic Computing
5%
Nitride Compound
13%
Optical Device
9%
Optical Property
5%
Oxide Compound
58%
Oxynitride
6%
Photosensor
7%
Physical Property
17%
Scanning Transmission Electron Microscopy
6%
Schottky Barrier
11%
Silicate
9%
Silicon
16%
Silicon Dioxide
6%
Silicon Nitride
14%
Surface (Surface Science)
23%
Thermal Stability
7%
Thin Films
15%
Transistor
85%
Transition Metal Dichalcogenide
33%
Tungsten
14%
Two-Dimensional Material
20%
Zirconia
9%
Keyphrases
AlGaN-GaN
16%
Aluminum Doping
14%
Aluminum Oxide
18%
Atomic Layer Deposition
12%
Band Gap
26%
Bilayer Graphene
17%
Black Phosphorus
23%
Channel Mobility
12%
Chemical Vapor Deposition
20%
Current Transport
14%
Cutoff Wavenumbers
12%
Device-independent
32%
Dielectric
30%
Doped Hafnium Oxide
19%
Electrical Properties
13%
Electronic Devices
31%
Electronic Properties
13%
Ferroelectric Materials
16%
Field-effect Transistors
22%
Ga2O3
12%
GaN HEMT
12%
Gate Dielectric
41%
Graphene
76%
Heterojunction
14%
Heterostructure
19%
HfO2
30%
HgCdTe
12%
High Electron Mobility Transistor
24%
High Performance
15%
High Temperature
27%
High Temperature Electronics
12%
High Temperature Operation
13%
Molybdenite
25%
Monolayer Molybdenum Disulfide
13%
MOSFET
14%
P-type
13%
Photonic Devices
12%
Physical Properties
17%
Reconfigurable Transistor
18%
Reflectance Spectra
12%
Room Temperature
15%
Silica
16%
Silicon Nitride
15%
Temperature Effect
13%
Transistor
37%
Transition Metal Dichalcogenides
17%
Tunnel Field-effect Transistor
14%
Two Dimensional Materials
16%
Ultrathin
21%
WSe2
18%
Engineering
2D Material
9%
Annealing Temperature
6%
Atomic Layer Deposition
12%
Band Gap
10%
Barrier Height
6%
Carrier Concentration
6%
Carrier Mobility
5%
Chemical Vapor Deposition
15%
Control Gate
8%
Current Drain
13%
Degradation Mechanism
5%
Dielectrics
35%
Electric Field
6%
Energy Band Diagram
5%
Engineering
9%
Epitaxial Graphene
5%
Field Effect Transistor
7%
Field-Effect Transistor
27%
Gate Dielectric
29%
Gate Length
10%
Gate Oxide
8%
Gate Stack
9%
Gate Voltage
5%
Graphene
60%
Heterostructures
12%
High Temperature Operations
14%
Inverter
9%
Ion Implantation
5%
Layer Graphene
7%
Logic Circuit
8%
Low-Temperature
5%
Metal-Oxide-Semiconductor Field-Effect Transistor
16%
Molybdenum Disulfide
18%
Monolayers
17%
Nitride
19%
Oxide-Nitride-Oxide
8%
Performance Degradation
8%
Photocurrent
14%
Polysilicon
6%
Radio Frequency
17%
Reflectance Spectrum
12%
Room Temperature
9%
Schottky Barrier
14%
Silicon Dioxide
5%
Thin Films
5%
Transition Metal Dichalcogenide
9%
Transport Mechanism
5%
Tunnel
8%
Two Dimensional
19%
Vapor Deposition
15%
