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Fingerprint Fingerprint is based on mining the text of the expert's scholarly documents to create an index of weighted terms, which defines the key subjects of each individual researcher.

  • 1 Similar Profiles
Graphite Chemical Compounds
Graphene Engineering & Materials Science
graphene Physics & Astronomy
Gate dielectrics Engineering & Materials Science
Hafnium oxides Engineering & Materials Science
Field effect transistors Engineering & Materials Science
molybdenum disulfides Physics & Astronomy
Plasmons Chemical Compounds

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Research Output 1996 2019

  • 52 Article
  • 11 Conference contribution
  • 3 Conference article
  • 1 Review article

Exploring New Metal Electrodes for Ferroelectric Aluminum-Doped Hafnium Oxide

Ryu, H., Xu, K., Kim, J., Kang, S., Guo, J. & Zhu, W., May 1 2019, In : IEEE Transactions on Electron Devices. 66, 5, p. 2359-2364 6 p., 8682093.

Research output: Contribution to journalArticle

Open Access
Hafnium oxides
Aluminum
Ferroelectric materials
Remanence
Metals

A general and simple method for evaluating the electrical transport performance of graphene by the van der Pauw–Hall measurement

Qing, F., Shu, Y., Qing, L., Niu, Y., Guo, H., Zhang, S., Liu, C., Shen, C., Zhang, W., Mao, S. S., Zhu, W. & Li, X., Nov 30 2018, In : Science Bulletin. 63, 22, p. 1521-1526 6 p.

Research output: Contribution to journalArticle

graphene
carrier mobility
field effect transistors
transport properties
vacuum

Atomic layer deposition of Al 2 O 3 and TiO 2 on MoS 2 surfaces

Kropp, J. A., Cai, Y., Yao, Z., Zhu, W. & Gougousi, T., Nov 1 2018, In : Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 36, 6, 06A101.

Research output: Contribution to journalArticle

Atomic layer deposition
atomic layer epitaxy
Chemical vapor deposition
vapor deposition
Film growth

Dielectric-induced interface states in black phosphorus and tungsten diselenide capacitors

Liu, J., Zhou, Y. & Zhu, W., Jul 2 2018, In : Applied Physics Letters. 113, 1, 013103.

Research output: Contribution to journalArticle

phosphorus
capacitors
tungsten
boron nitrides
minority carriers

Esaki Diodes Based on 2-D/3-D Heterojunctions

Xu, K., Cai, Y. & Zhu, W., Oct 1 2018, In : IEEE Transactions on Electron Devices. 65, 10, p. 4155-4159 5 p., 8466017.

Research output: Contribution to journalArticle

Heterojunctions
Diodes
Monolayers
Silicon
Doping (additives)