Wei He

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Conference article
High-performance high-κ/metal gates for 45nm CMOS and beyond with gate-first processing
Chudzik, M., Doris, B., Mo, R., Sleight, J., Cartier, E., Dewan, C., Park, D., Bu, H., Natzle, W., Yan, W., Ouyang, C., Henson, K., Boyd, D., Callegari, S., Carter, R., Casarotto, D., Gribelyuk, M., Hargrove, M., He, W., Kim, Y., & 17 othersLinder, B., Moumen, N., Paruchuri, V. K., Stathis, J., Steen, M., Vayshenker, A., Wang, X., Zafar, S., Ando, T., Iijima, R., Takayanagi, M., Narayanan, V., Wise, R., Zhang, Y., Divakaruni, R., Khare, M. & Chen, T. C., 2007, In: Digest of Technical Papers - Symposium on VLSI Technology. p. 194-195 2 p., 4339689.
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