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    High-performance high-κ/metal gates for 45nm CMOS and beyond with gate-first processing

    Chudzik, M., Doris, B., Mo, R., Sleight, J., Cartier, E., Dewan, C., Park, D., Bu, H., Natzle, W., Yan, W., Ouyang, C., Henson, K., Boyd, D., Callegari, S., Carter, R., Casarotto, D., Gribelyuk, M., Hargrove, M., He, W., Kim, Y., & 17 othersLinder, B., Moumen, N., Paruchuri, V. K., Stathis, J., Steen, M., Vayshenker, A., Wang, X., Zafar, S., Ando, T., Iijima, R., Takayanagi, M., Narayanan, V., Wise, R., Zhang, Y., Divakaruni, R., Khare, M. & Chen, T. C., 2007, In: Digest of Technical Papers - Symposium on VLSI Technology. p. 194-195 2 p., 4339689.

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