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Rongming Chu

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  • AlGaN/GaN Sidewall Gated HEMTs

    Guan, R., Xiong, Y., Zheng, X., Huang, Y. S., Speck, J. S., Jackson, T. N. & Chu, R., 2026, (Accepted/In press) In: IEEE Electron Device Letters.

    Research output: Contribution to journal › Article › peer-review

  • Design and 800 °C operation of an ohmic contact to AlGaN/GaN heterostructures

    Chiu, C. W., Visvkarma, A. K., Banner, N. S., Xiong, Y., Liu, B., Mouck, D. R., Lyle, L. A. M., Chu, R. & Mohney, S. E., Mar 1 2026, In: Materials Science in Semiconductor Processing. 203, 110263.

    Research output: Contribution to journal › Article › peer-review

  • GaN Digital IC Operating Up to 800 °C Temperature

    Xiong, Y., Visvkarma, A. K., Guan, R., Gaona, J. N. J., Chen, Z., Banner, N. S., Chiu, C. W., Zheng, X., Mohney, S. E., Jackson, T. N. & Chu, R., 2026, In: IEEE Transactions on Electron Devices. 73, 3, p. 1259-1265 7 p.

    Research output: Contribution to journal › Article › peer-review

  • Revealing Bulk Trap Distributions in GaN MESFETs Through Re-Defined AC-GmCharacterization Method under Irradiation and Stress

    Zhang, B., Zhao, X., Cornigli, D., Song, J., Du, Y., Villena, M. A., Nardi, F., Lunardelli, V., Larcher, L., Thareja, G., Chu, R. & Roy, T., 2026, 2026 IEEE International Reliability Physics Symposium, IRPS 2026. Institute of Electrical and Electronics Engineers Inc., (IEEE International Reliability Physics Symposium Proceedings).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Single event effect sensitivity of GaN devices with femtosecond pulsed laser probing

    Adler, J., Du, Y., Song, J., Stepanoff, S., Khachatrian, A., Chu, R., Wolfe, D. E., Pearton, S. J., Ren, F. & Haque, A., Jul 3 2026, In: Journal of Physics D: Applied Physics. 59, 26, 265102.

    Research output: Contribution to journal › Article › peer-review

    Open Access
View all 116 Research outputs