1978 …2019
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Research Output 1978 2019

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Letter
2004

Polyimide passivated AlGaN-GaN HFETs with 7.65 W/mm at 18 GHz

Hampson, M. D., Shen, S. C., Schwindt, R. S., Price, R. K., Chowdhury, U., Wong, M. M., Gang Zhu, T., Yoo, D., Dupuis, R. D. & Feng, M., May 1 2004, In : IEEE Electron Device Letters. 25, 5, p. 238-240 3 p.

Research output: Contribution to journalLetter

Surface states
Passivation
Polyimides
Organic Chemicals
Wave power
2003

Improved performance of AlGaN/GaN heterojunction field-effect transistors using delta doping and a binary barrier

Wong, M. M., Chowdhury, U., Sicault, D., Becher, D. T., Denyszyn, J. C., Choi, J. H., Zhu, T. G., Feng, M. & Dupuis, R. D., Apr 1 2003, In : Japanese Journal of Applied Physics, Part 2: Letters. 42, 4 A

Research output: Contribution to journalLetter

Field effect transistors
Heterojunctions
heterojunctions
field effect transistors
Doping (additives)

Low-power high-speed operation of submicron InP-InGaAs SHBTs at 1 mA

Hafez, W., Lai, J. W. & Feng, M., Jul 1 2003, In : IEEE Electron Device Letters. 24, 7, p. 427-429 3 p.

Research output: Contribution to journalLetter

Heterojunction bipolar transistors
Transistors
Networks (circuits)

Vertical scaling of 0.25-μm emitter InP/InGaAs single heterojunction bipolar transistors with fT of 452 GHz

Hafez, W., Lai, J. W. & Feng, M., Jul 1 2003, In : IEEE Electron Device Letters. 24, 7, p. 436-438 3 p.

Research output: Contribution to journalLetter

Heterojunction bipolar transistors
Cutoff frequency
Transistors
Current density