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Research Output

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Conference article
2007

Type-it GaAsSb/InP DHBTs with record fT = 670 GHz and simultaneous fT, fMAX > 400 GHz

Snodgrass, W., Wu, B. R., Cheng, K. Y. & Feng, M., Dec 1 2007, In : Technical Digest - International Electron Devices Meeting, IEDM. p. 663-666 4 p., 4419031.

Research output: Contribution to journalConference article

2005

10Gbps operation of a metamorphic InGaP buffered in0.53Ga 0.47As p-i-n photodetector grown on GaAs substrate

Liao, Y. S., Lin, G. R., Lin, C. K., Chu, Y. S., Kuo, H. C. & Feng, M., Dec 1 2005, In : Proceedings of SPIE - The International Society for Optical Engineering. 6020, 602023.

Research output: Contribution to journalConference article

300 GHz InP DHBT large signal model including current blocking effect and validated by Gilbert multiplier circuits

Lai, J. W., Caruth, D., Chuang, Y. J., Cimino, K., Elder, R., Jansen, D., Stroili, F., Le, M. & Feng, M., Dec 1 2005, In : Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC. p. 61-64 4 p., D.2.

Research output: Contribution to journalConference article

2004

Current status of GaN heterojunction bipolar transistors

Feng, M., Price, R. K., Chan, R., Chung, T., Dupuis, R. D., Keogh, D. M., Li, J. C., Conway, A. M., Qiao, D., Raychaudhuri, S. & Asbeck, P. M., Dec 1 2004, In : Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting. p. 26-31 6 p., 1.1.

Research output: Contribution to journalConference article

Low noise, and high gain wideband amplifier using SiGe HBT technology

Chan, R. & Feng, M., Sep 20 2004, In : IEEE MTT-S International Microwave Symposium Digest. 1, p. 21-24 4 p.

Research output: Contribution to journalConference article

Over 500 GHz InP Heterojunction Bipolar Transistors

Feng, M., Hafez, W. & Lai, J. W., Dec 1 2004, In : Conference Proceedings - International Conference on Indium Phosphide and Related Materials. p. 653-658 6 p.

Research output: Contribution to journalConference article

2000

Impact of 1/f noise in Ka-band InGaP/GaAs HBT frequency sources

Heins, M. S., Juneja, T., Caruth, D., Hattendorf, M. & Feng, M., Dec 11 2000, In : IEEE MTT-S International Microwave Symposium Digest. 2, p. 1209-1212 4 p.

Research output: Contribution to journalConference article

InGaP/GaAs HBT/PIN technology for 20 Gb/s and 40 Gb/s OEICs

Mu, J. H. & Feng, M., Dec 1 2000, In : Proceedings of SPIE - The International Society for Optical Engineering. 4111, p. 182-191 10 p.

Research output: Contribution to journalConference article

Low-cost 38 and 77 GHz CPW MMICs using ion-implanted GaAs MESFETs

Caruth, D. C., Shimon, R. L., Heins, M. S., Hsia, H., Tang, Z., Shen, S. C., Becher, D., Huang, J. J. & Feng, M., Dec 11 2000, In : IEEE MTT-S International Microwave Symposium Digest. 2, p. 995-998 4 p.

Research output: Contribution to journalConference article

Low cost GaAs MESFET and InP HFET technologies for 40 Gb/s OEICs

Mu, J., Tang, Z., Becher, D., Shen, S. C. & Feng, M., Dec 1 2000, In : Proceedings of SPIE - The International Society for Optical Engineering. 4111, p. 171-181 11 p.

Research output: Contribution to journalConference article

Very wide-band 14 Bit, 1 GS/s track-and-hold amplifier

Seo, D., Weil, A. & Feng, M., Jan 1 2000, In : Proceedings - IEEE International Symposium on Circuits and Systems. 5

Research output: Contribution to journalConference article

1999

Activation of silicon ion-implanted gallium nitride by furnace annealing

Dupuis, R. D., Eiting, C. J., Grudowski, P. A., Hsia, H., Tang, Z., Becher, D., Kuo, H., Stillman, G. E. & Feng, M., Mar 1999, In : Journal of Electronic Materials. 28, 3, p. 319-324 6 p.

Research output: Contribution to journalConference article

GaAs and InP-based HBT technology for 100 GHz applications

Ahmari, D. A., Hartmann, Q. J., Feng, M. & Stillman, G. E., Jan 1 1999, In : Proceedings of SPIE - The International Society for Optical Engineering. 3795, p. 528-541 14 p.

Research output: Contribution to journalConference article

W-band InGaP/GaAs HBT MMIC frequency sources

Heins, M. S., Juneja, T., Fendrich, J. A., Mu, J., Scott, D., Yang, Q., Hattendorf, M., Stillman, G. E. & Feng, M., Dec 1 1999, In : IEEE MTT-S International Microwave Symposium Digest. 1, p. 239-242 4 p.

Research output: Contribution to journalConference article

1998

Intermixed quantum well photodetectors for long wavelength detection

Sengupta, D. K., Curtis, A. P., Malin, J. I., Kuo, H. C., Hseih, K. C., Feng, M., Stillman, G. E., Kar, A., Mazumder, J., Liu, H. C. & Wang, W. I., Dec 1 1998, In : Proceedings of SPIE - The International Society for Optical Engineering. 3211, p. 138-142 5 p.

Research output: Contribution to journalConference article

1997

Accurate passive component models in coplanar waveguide for 50 GHz MMICs

Shimon, R., Scherrer, D., Caruth, D., Middleton, J., Hsia, H. & Feng, M., Jan 1 1997, In : IEEE MTT-S International Microwave Symposium Digest. 2, p. 769-772 4 p.

Research output: Contribution to journalConference article

Effects of annealing on the performance of InP/InGaAs HBTs grown by LP-MOCVD

Hartmann, Q. J., Fresina, M. T., Ahmari, D. A., Stockman, S. A., Baker, J. E., Barlage, D., Hwangbo, H., Yung, A., Feng, M. & Stillman, G. E., Jan 1 1997, In : Conference Proceedings - International Conference on Indium Phosphide and Related Materials. p. 505-508 4 p.

Research output: Contribution to journalConference article

Growth and characterization of interfaces in p-type InGaAs/InP quantum-well infrared photodetectors with ultra-thin quantum wells

Sengupta, D. K., Kim, S., Horton, T., Kuo, H. C., Thomas, S., Jackson, S. L., Curtis, A. P., Bishop, S. G., Feng, M., Stillman, G. E., Chang, Y. C. & Liu, H. C., Jan 1 1997, In : Materials Research Society Symposium - Proceedings. 450, p. 225-230 6 p.

Research output: Contribution to journalConference article

Low phase noise Ka-band VCOs using InGaP/GaAs HBTs and coplanar waveguide

Heins, M. S., Barlage, D. W., Fresina, M. T., Ahmari, D. A., Hartmann, Q. J., Stillman, G. E. & Feng, M., Jan 1 1997, In : IEEE MTT-S International Microwave Symposium Digest. 1, p. 255-258 4 p.

Research output: Contribution to journalConference article

1996

Comparison of n- and p-type InGaAs/InP quantum well infrared photodetectors

Sengupta, D. K., Malin, J. L., Jackson, S. I., Fang, W., Wu, W., Kuo, H. C., Rowe, C., Chuang, S. L., Hsieh, K. C., Tucker, J. R., Lyding, J. W., Feng, M., Stillman, G. E. & Liu, H. C., Dec 1 1996, In : Materials Research Society Symposium - Proceedings. 421, p. 203-208 6 p.

Research output: Contribution to journalConference article

Design and fabrication of low-power 1-Gb/s OEIC receivers

Chang, W. H., Airola, D. D. & Feng, M., Jan 30 1996, In : Proceedings of SPIE - The International Society for Optical Engineering. 10284, p. 244-266 23 p., 102840D.

Research output: Contribution to journalConference article

Growth and characterization of high-speed InP/InGaAs bipolar transistors using N+-InP containing layers

Thomas, S., Martino, C. A., Fresina, M. T., Ahmari, D. A., Barlage, D. W., Chang, W. H., Feng, M. & Stillman, G. E., Jan 1 1996, In : Conference Proceedings - International Conference on Indium Phosphide and Related Materials. p. 141-144 4 p.

Research output: Contribution to journalConference article

InGaP/GaAs HBT with novel layer structure for emitter ledge fabrication

Fresina, M. T., Hartmann, Q. J., Thomas, S., Ahmari, D. A., Caruth, D., Feng, M. & Stillman, G. E., Dec 1 1996, In : Technical Digest - International Electron Devices Meeting. p. 207-210 4 p.

Research output: Contribution to journalConference article

Long wavelength shifting and broadening of quantum well infrared photodetector response via rapid thermal annealing

Sengupta, D. K., Fang, W., Malin, J. I., Kuo, H. C., Horton, T., Curtis, A., Gardner, N. F., Flachsbart, B., Wohlmuth, W., Turnbull, D., Chuang, S. L., Hsieh, K. C., Cheng, K. Y., Adesida, I., Feng, M. & et al, A., Jan 1 1996, In : Materials Research Society Symposium - Proceedings. 421, p. 355-360 6 p.

Research output: Contribution to journalConference article

1995

Development of an integrated detector for NMR microscopy

Stocker, J. E., Peck, T. L., Franke, S. J., Kruse, J., Feng, M. & Magin, R. L., Dec 1 1995, In : Annual International Conference of the IEEE Engineering in Medicine and Biology - Proceedings. 17, 1, p. 843-844 2 p.

Research output: Contribution to journalConference article

1994

Cryogenic on-wafer microwave characterization of GaAs MESFETs and superconducting coplanar resonance and transmission lines structures

Kruse, J., Schweinfurth, R. A., Gao, F., Scherrert, D., Barlaget, D., Platt, C. E., Van Harlingen, D. J. & Feng, M., Jan 4 1994, In : Proceedings of SPIE - The International Society for Optical Engineering. 2156, p. 152-159 8 p.

Research output: Contribution to journalConference article

Design and fabrication of short wavelength four-channel MSM-MESFET based OEIC receivers

Shih, C. G., Wang, J. S., Chang, W. H., Barlage, D. & Feng, M., Dec 1 1994, In : LEOS Summer Topical Meeting. p. 45-46 2 p.

Research output: Contribution to journalConference article

Monolithic gallium arsenide receiver for NMR microscopy

Peck, T. L., Franke, S. J., Feng, M., Kruse, J. & Magin, R. L., Dec 1 1994, In : Annual International Conference of the IEEE Engineering in Medicine and Biology - Proceedings. 16, pt 2, p. 976-977 2 p.

Research output: Contribution to journalConference article

1990

44 GHz hybrid low noise amplifiers using ion-implanted InxGa1-xAs MESFETs

Lau, C. L., Feng, M., Wang, G. W., Lepkowski, T., Chang, Y., Ito, C., Dunn, V., Hodges, N. & Schellenberg, J., Jan 1 1990, In : IEEE MTT-S International Microwave Symposium Digest. 1, p. 431-433 3 p.

Research output: Contribution to journalConference article

1989

Heterojunction ion-implanted FET's (HIFET's)

Wang, G. W., Feng, M., Liaw, Y. P., Kaliski, R., Lau, C. L., Chang, Y. & Ito, C., Nov 1 1989, In : IEEE Transactions on Electron Devices. 36, 11 pt 1, 1 p.

Research output: Contribution to journalConference article

MMIC phase shifters and amplifiers for millimeter-wavelength active arrays

Dunn, V. E., Hodges, N. E., Sy, O. A., Alyassini, W., Feng, M. & Chang, Y. C., Dec 1 1989, In : IEEE MTT-S International Microwave Symposium Digest. 1, p. 127-130 4 p.

Research output: Contribution to journalConference article

1983

60 GHz GaAs FET AMPLIFIER.

Watkins, E. T., Schellenberg, J. M., Hackett, L. H., Yamasaki, H. & Feng, M., Dec 1 1983, In : IEEE MTT-S International Microwave Symposium Digest. p. 145-147 3 p.

Research output: Contribution to journalConference article

1979

IMPURITY DEPENDENCE OF DISTRIBUTION COEFFICIENTS IN THE LPE GROWTH OF InGaAsP.

Feng, M., Tashima, M. M., Cook, L. W. & Stillman, G. E., Jan 1 1979, In : Institute of Physics Conference Series. 45, p. 61-70 10 p.

Research output: Contribution to journalConference article