1978 …2019
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Research Output 1978 2019

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Conference article
2007

Type-it GaAsSb/InP DHBTs with record fT = 670 GHz and simultaneous fT, fMAX > 400 GHz

Snodgrass, W., Wu, B. R., Cheng, K. Y. & Feng, M., Dec 1 2007, In : Technical Digest - International Electron Devices Meeting, IEDM. p. 663-666 4 p., 4419031.

Research output: Contribution to journalConference article

Heterojunction bipolar transistors
Electric breakdown
accumulators
electrical faults
Transistors
2005

10Gbps operation of a metamorphic InGaP buffered in0.53Ga 0.47As p-i-n photodetector grown on GaAs substrate

Liao, Y. S., Lin, G. R., Lin, C. K., Chu, Y. S., Kuo, H. C. & Feng, M., Dec 1 2005, In : Proceedings of SPIE - The International Society for Optical Engineering. 6020, 602023.

Research output: Contribution to journalConference article

Photodetector
Gallium Arsenide
Photodetectors
photometers
Substrate

300 GHz InP DHBT large signal model including current blocking effect and validated by Gilbert multiplier circuits

Lai, J. W., Caruth, D., Chuang, Y. J., Cimino, K., Elder, R., Jansen, D., Stroili, F., Le, M. & Feng, M., Dec 1 2005, In : Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC. p. 61-64 4 p., D.2.

Research output: Contribution to journalConference article

Networks (circuits)
Bipolar transistors
Heterojunction bipolar transistors
Integrated circuits
Modulation
2004

Current status of GaN heterojunction bipolar transistors

Feng, M., Price, R. K., Chan, R., Chung, T., Dupuis, R. D., Keogh, D. M., Li, J. C., Conway, A. M., Qiao, D., Raychaudhuri, S. & Asbeck, P. M., Dec 1 2004, In : Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting. p. 26-31 6 p., 1.1.

Research output: Contribution to journalConference article

Heterojunction bipolar transistors
Power amplifiers
Dry etching
Ohmic contacts
Metallorganic chemical vapor deposition

Low noise, and high gain wideband amplifier using SiGe HBT technology

Chan, R. & Feng, M., Sep 20 2004, In : IEEE MTT-S International Microwave Symposium Digest. 1, p. 21-24 4 p.

Research output: Contribution to journalConference article

Broadband amplifiers
Intermodulation
Low noise amplifiers
Heterojunction bipolar transistors
Noise figure

Over 500 GHz InP Heterojunction Bipolar Transistors

Feng, M., Hafez, W. & Lai, J. W., Dec 1 2004, In : Conference Proceedings - International Conference on Indium Phosphide and Related Materials. p. 653-658 6 p.

Research output: Contribution to journalConference article

Heterojunction bipolar transistors
Cutoff frequency
Electric breakdown
Scalability
Current density
2000

Impact of 1/f noise in Ka-band InGaP/GaAs HBT frequency sources

Heins, M. S., Juneja, T., Caruth, D., Hattendorf, M. & Feng, M., Dec 11 2000, In : IEEE MTT-S International Microwave Symposium Digest. 2, p. 1209-1212 4 p.

Research output: Contribution to journalConference article

Heterojunction bipolar transistors
Networks (circuits)
Variable frequency oscillators
Phase noise
voltage controlled oscillators

InGaP/GaAs HBT/PIN technology for 20 Gb/s and 40 Gb/s OEICs

Mu, J. H. & Feng, M., Dec 1 2000, In : Proceedings of SPIE - The International Society for Optical Engineering. 4111, p. 182-191 10 p.

Research output: Contribution to journalConference article

Integrated optoelectronics
Photodetector
Heterojunction bipolar transistors
Gallium Arsenide
photometers

Low-cost 38 and 77 GHz CPW MMICs using ion-implanted GaAs MESFETs

Caruth, D. C., Shimon, R. L., Heins, M. S., Hsia, H., Tang, Z., Shen, S. C., Becher, D., Huang, J. J. & Feng, M., Dec 11 2000, In : IEEE MTT-S International Microwave Symposium Digest. 2, p. 995-998 4 p.

Research output: Contribution to journalConference article

Monolithic microwave integrated circuits
field effect transistors
amplifiers
Frequency doublers
voltage controlled oscillators

Low cost GaAs MESFET and InP HFET technologies for 40 Gb/s OEICs

Mu, J., Tang, Z., Becher, D., Shen, S. C. & Feng, M., Dec 1 2000, In : Proceedings of SPIE - The International Society for Optical Engineering. 4111, p. 171-181 11 p.

Research output: Contribution to journalConference article

Integrated optoelectronics
Gallium Arsenide
field effect transistors
Ions
Implant

Very wide-band 14 Bit, 1 GS/s track-and-hold amplifier

Seo, D., Weil, A. & Feng, M., Jan 1 2000, In : Proceedings - IEEE International Symposium on Circuits and Systems. 5

Research output: Contribution to journalConference article

Sampling
Bandwidth
Capacitance
Networks (circuits)
Heterojunction bipolar transistors
1999

Activation of silicon ion-implanted gallium nitride by furnace annealing

Dupuis, R. D., Eiting, C. J., Grudowski, P. A., Hsia, H., Tang, Z., Becher, D., Kuo, H., Stillman, G. E. & Feng, M., Mar 1999, In : Journal of Electronic Materials. 28, 3, p. 319-324 6 p.

Research output: Contribution to journalConference article

Gallium nitride
gallium nitrides
Silicon
furnaces
Furnaces

W-band InGaP/GaAs HBT MMIC frequency sources

Heins, M. S., Juneja, T., Fendrich, J. A., Mu, J., Scott, D., Yang, Q., Hattendorf, M., Stillman, G. E. & Feng, M., Dec 1 1999, In : IEEE MTT-S International Microwave Symposium Digest. 1, p. 239-242 4 p.

Research output: Contribution to journalConference article

voltage controlled oscillators
Variable frequency oscillators
Monolithic microwave integrated circuits
Heterojunction bipolar transistors
Phase noise
1998

Intermixed quantum well photodetectors for long wavelength detection

Sengupta, D. K., Curtis, A. P., Malin, J. I., Kuo, H. C., Hseih, K. C., Feng, M., Stillman, G. E., Kar, A., Mazumder, J., Liu, H. C. & Wang, W. I., Dec 1 1998, In : Proceedings of SPIE - The International Society for Optical Engineering. 3211, p. 138-142 5 p.

Research output: Contribution to journalConference article

Photodetector
Quantum Well
Photodetectors
Annealing
quantum well infrared photodetectors
1997

Accurate passive component models in coplanar waveguide for 50 GHz MMICs

Shimon, R., Scherrer, D., Caruth, D., Middleton, J., Hsia, H. & Feng, M., Jan 1 1997, In : IEEE MTT-S International Microwave Symposium Digest. 2, p. 769-772 4 p.

Research output: Contribution to journalConference article

Coplanar waveguides
Monolithic microwave integrated circuits
Scattering parameters
waveguides
Networks (circuits)

Effects of annealing on the performance of InP/InGaAs HBTs grown by LP-MOCVD

Hartmann, Q. J., Fresina, M. T., Ahmari, D. A., Stockman, S. A., Baker, J. E., Barlage, D., Hwangbo, H., Yung, A., Feng, M. & Stillman, G. E., Jan 1 1997, In : Conference Proceedings - International Conference on Indium Phosphide and Related Materials. p. 505-508 4 p.

Research output: Contribution to journalConference article

Metallorganic chemical vapor deposition
Heterojunction bipolar transistors
Hydrogen
Annealing
Hole concentration

Growth and characterization of interfaces in p-type InGaAs/InP quantum-well infrared photodetectors with ultra-thin quantum wells

Sengupta, D. K., Kim, S., Horton, T., Kuo, H. C., Thomas, S., Jackson, S. L., Curtis, A. P., Bishop, S. G., Feng, M., Stillman, G. E., Chang, Y. C. & Liu, H. C., Jan 1 1997, In : Materials Research Society Symposium - Proceedings. 450, p. 225-230 6 p.

Research output: Contribution to journalConference article

Quantum well infrared photodetectors
Gas source molecular beam epitaxy
quantum well infrared photodetectors
Scanning tunneling microscopy
Photocurrents

Low phase noise Ka-band VCOs using InGaP/GaAs HBTs and coplanar waveguide

Heins, M. S., Barlage, D. W., Fresina, M. T., Ahmari, D. A., Hartmann, Q. J., Stillman, G. E. & Feng, M., Jan 1 1997, In : IEEE MTT-S International Microwave Symposium Digest. 1, p. 255-258 4 p.

Research output: Contribution to journalConference article

voltage controlled oscillators
Coplanar waveguides
Variable frequency oscillators
Heterojunction bipolar transistors
Phase noise
1996

Comparison of n- and p-type InGaAs/InP quantum well infrared photodetectors

Sengupta, D. K., Malin, J. L., Jackson, S. I., Fang, W., Wu, W., Kuo, H. C., Rowe, C., Chuang, S. L., Hsieh, K. C., Tucker, J. R., Lyding, J. W., Feng, M., Stillman, G. E. & Liu, H. C., Dec 1 1996, In : Materials Research Society Symposium - Proceedings. 421, p. 203-208 6 p.

Research output: Contribution to journalConference article

Quantum well infrared photodetectors
quantum well infrared photodetectors
Molecular beams
molecular beams
Gases

Growth and characterization of high-speed InP/InGaAs bipolar transistors using N+-InP containing layers

Thomas, S., Martino, C. A., Fresina, M. T., Ahmari, D. A., Barlage, D. W., Chang, W. H., Feng, M. & Stillman, G. E., Jan 1 1996, In : Conference Proceedings - International Conference on Indium Phosphide and Related Materials. p. 141-144 4 p.

Research output: Contribution to journalConference article

Bipolar transistors
Heterojunction bipolar transistors
Chemical beam epitaxy
Cutoff frequency
Doping (additives)

InGaP/GaAs HBT with novel layer structure for emitter ledge fabrication

Fresina, M. T., Hartmann, Q. J., Thomas, S., Ahmari, D. A., Caruth, D., Feng, M. & Stillman, G. E., Dec 1 1996, In : Technical Digest - International Electron Devices Meeting. p. 207-210 4 p.

Research output: Contribution to journalConference article

ledges
Heterojunction bipolar transistors
emitters
Fabrication
fabrication

Long wavelength shifting and broadening of quantum well infrared photodetector response via rapid thermal annealing

Sengupta, D. K., Fang, W., Malin, J. I., Kuo, H. C., Horton, T., Curtis, A., Gardner, N. F., Flachsbart, B., Wohlmuth, W., Turnbull, D., Chuang, S. L., Hsieh, K. C., Cheng, K. Y., Adesida, I., Feng, M. & et al, A., Dec 1 1996, In : Materials Research Society Symposium - Proceedings. 421, p. 355-360 6 p.

Research output: Contribution to journalConference article

Quantum well infrared photodetectors
quantum well infrared photodetectors
Rapid thermal annealing
Detectors
Wavelength
1995

Development of an integrated detector for NMR microscopy

Stocker, J. E., Peck, T. L., Franke, S. J., Kruse, J., Feng, M. & Magin, R. L., Dec 1 1995, In : Annual International Conference of the IEEE Engineering in Medicine and Biology - Proceedings. 17, 1, p. 843-844 2 p.

Research output: Contribution to journalConference article

Noise
Microscopy
Microscopic examination
Magnetic Resonance Spectroscopy
Nuclear magnetic resonance
1994

Design and fabrication of short wavelength four-channel MSM-MESFET based OEIC receivers

Shih, C. G., Wang, J. S., Chang, W. H., Barlage, D. & Feng, M., Dec 1 1994, In : LEOS Summer Topical Meeting. p. 45-46 2 p.

Research output: Contribution to journalConference article

MSM (semiconductors)
Integrated optoelectronics
Crosstalk
Testbeds
Optoelectronic devices

Monolithic gallium arsenide receiver for NMR microscopy

Peck, T. L., Franke, S. J., Feng, M., Kruse, J. & Magin, R. L., Dec 1 1994, In : Annual International Conference of the IEEE Engineering in Medicine and Biology - Proceedings. 16, pt 2, p. 976-977 2 p.

Research output: Contribution to journalConference article

Gallium arsenide
Microscopy
Microscopic examination
Nuclear magnetic resonance
Electric Impedance
1990

44 GHz hybrid low noise amplifiers using ion-implanted InxGa1-xAs MESFETs

Lau, C. L., Feng, M., Wang, G. W., Lepkowski, T., Chang, Y., Ito, C., Dunn, V., Hodges, N. & Schellenberg, J., Jan 1 1990, In : IEEE MTT-S International Microwave Symposium Digest. 1, p. 431-433 3 p.

Research output: Contribution to journalConference article

Low noise amplifiers
low noise
field effect transistors
amplifiers
Ions
1989

Heterojunction ion-implanted FET's (HIFET's)

Wang, G. W., Feng, M., Liaw, Y. P., Kaliski, R., Lau, C. L., Chang, Y. & Ito, C., Nov 1 1989, In : IEEE Transactions on Electron Devices. 36, 11 pt 1, 1 p.

Research output: Contribution to journalConference article

Field effect transistors
Heterojunctions
Drain current
Ions
Microwaves

MMIC phase shifters and amplifiers for millimeter-wavelength active arrays

Dunn, V. E., Hodges, N. E., Sy, O. A., Alyassini, W., Feng, M. & Chang, Y. C., Dec 1 1989, In : IEEE MTT-S International Microwave Symposium Digest. 1, p. 127-130 4 p.

Research output: Contribution to journalConference article

microwave circuits
Phase shifters
Monolithic microwave integrated circuits
integrated circuits
amplifiers
1979

IMPURITY DEPENDENCE OF DISTRIBUTION COEFFICIENTS IN THE LPE GROWTH OF InGaAsP.

Feng, M., Tashima, M. M., Cook, L. W. & Stillman, G. E., Jan 1 1979, In : Institute of Physics Conference Series. 45, p. 61-70 10 p.

Research output: Contribution to journalConference article

impurities
coefficients
homojunctions
causes