1978 …2019
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Research Output 1978 2019

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Article
2019
Photonics
Transistors
Lasers
Optical receivers
Wafer bonding
2018

Direct and photon-assisted tunneling in resonant-cavity quantum-well light-emitting transistors

Qiu, J., Wang, C. Y., Feng, M. & Holonyak, N., Dec 21 2018, In : Journal of Applied Physics. 124, 23, 234501.

Research output: Contribution to journalArticle

cavity resonators
transistors
quantum wells
photons
accumulators

Oxide-Confined VCSELs for High-Speed Optical Interconnects

Feng, M., Wu, C. H. & Holonyak, N., Jun 2018, In : IEEE Journal of Quantum Electronics. 54, 3, 8319410.

Research output: Contribution to journalArticle

optical interconnects
Optical interconnects
Surface emitting lasers
high speed
Bit error rate

Tunneling Modulation of Transistor Lasers: Theory and Experiment

Feng, M., Qiu, J. & Holonyak, N., Apr 2018, In : IEEE Journal of Quantum Electronics. 54, 2, 2000514.

Research output: Contribution to journalArticle

Laser theory
Transistors
transistors
Modulation
Photons
2017

Electro-optical hysteresis and bistability in the ring-cavity tunneling-collector transistor laser

Feng, M., Holonyak, N., Wu, M. K. & Tan, F., Apr 21 2017, In : Journal of Applied Physics. 121, 15, 153103.

Research output: Contribution to journalArticle

variable cycle engines
accumulators
logic
transistors
hysteresis

High-speed visible light communication using GaN-based light-emitting diodes with photonic crystals

Yin, Y. F., Lan, W. Y., Lin, T. C., Wang, C., Feng, M. & Huang, J. J., Jan 15 2017, In : Journal of Lightwave Technology. 35, 2, p. 258-264 7 p., 7762808.

Research output: Contribution to journalArticle

optical communication
light emitting diodes
high speed
photonics
crystals

Resonance-free optical response of a vertical cavity transistor laser

Feng, M., Wu, C. H., Wu, M. K., Wu, C. H. & Holonyak, N., Sep 18 2017, In : Applied Physics Letters. 111, 12, 121106.

Research output: Contribution to journalArticle

transistors
bandwidth
optical resonance
cavities
bit error rate

Room temperature operation of electro-optical bistability in the edge-emitting tunneling-collector transistor laser

Feng, M., Holonyak, N. & Wang, C. Y., Sep 14 2017, In : Journal of Applied Physics. 122, 10, 103102.

Research output: Contribution to journalArticle

optical bistability
accumulators
transistors
switches
photons
2016

Intra-cavity photon-assisted tunneling collector-base voltage-mediated electron-hole spontaneous-stimulated recombination transistor laser

Feng, M., Qiu, J., Wang, C. Y. & Holonyak, N., Feb 28 2016, In : Journal of Applied Physics. 119, 8, 084502.

Research output: Contribution to journalArticle

accumulators
transistors
cavities
photons
electric potential

Microwave extraction method of radiative recombination and photon lifetimes up to 85 °C on 50 Gb/s oxide-vertical cavity surface emitting laser

Wang, C. Y., Liu, M., Feng, M. & Holonyak, N., Dec 14 2016, In : Journal of Applied Physics. 120, 22, 223103.

Research output: Contribution to journalArticle

radiative recombination
surface emitting lasers
microwaves
life (durability)
cavities

Tunneling modulation of a quantum-well transistor laser

Feng, M., Qiu, J., Wang, C. Y. & Holonyak, N., Nov 28 2016, In : Journal of Applied Physics. 120, 20, 204501.

Research output: Contribution to journalArticle

accumulators
transistors
quantum wells
modulation
lasers
2015

Metamorphosis of the transistor into a laser

Feng, M. & Holonyak, N., Jan 1 2015, In : EPL. 109, 1

Research output: Contribution to journalArticle

transistors
lasers
bipolar transistors
accumulators
heterojunctions

Optical pulse generation in a transistor laser via intra-cavity photon-assisted tunneling and excess base carrier redistribution

Feng, M., Iverson, E. W., Wang, C. Y. & Holonyak, N., Nov 2 2015, In : Applied Physics Letters. 107, 18, 181108.

Research output: Contribution to journalArticle

accumulators
transistors
cavities
photons
pulses

Single quantum-well transistor lasers operating error-free at 22 Gb/s

Bambery, R., Wang, C. Y., Tan, F., Feng, M. & Holonyak, N., Mar 15 2015, In : IEEE Photonics Technology Letters. 27, 6, p. 600-603 4 p., 7004784.

Research output: Contribution to journalArticle

Semiconductor quantum wells
Transistors
transistors
quantum wells
Binary sequences
2014

0.5 THz performance of a type-II DHBT with a doping-graded and constant-composition GaAsSb base

Xu, H., Wu, B., Iverson, E. W., Low, T. S. & Feng, M., Jan 1 2014, In : IEEE Electron Device Letters. 35, 1, p. 24-26 3 p., 6678780.

Research output: Contribution to journalArticle

Heterojunction bipolar transistors
Molecular beam epitaxy
Doping (additives)
Chemical analysis

780 nm oxide-confined VCSEL with 13.5 Gb/s error-free data transmission

Liu, M., Wu, M. K., Tan, F., Bambery, R., Feng, M. & Holonyak, N., Apr 1 2014, In : IEEE Photonics Technology Letters. 26, 7, p. 702-705 4 p., 6728712.

Research output: Contribution to journalArticle

Surface emitting lasers
data transmission
surface emitting lasers
threshold currents
Data communication systems

850 nm oxide-VCSEL with low relative intensity noise and 40 Gb/s error free data transmission

Tan, F., Wu, M. K., Liu, M., Feng, M. & Holonyak, N., Feb 1 2014, In : IEEE Photonics Technology Letters. 26, 3, p. 289-292 4 p., 6589110.

Research output: Contribution to journalArticle

noise intensity
Surface emitting lasers
data transmission
Data communication systems
Oxides

Effect of the energy barrier in the base of the transistor laser on the recombination lifetime

Bambery, R., Wang, C., Dallesasse, J. M., Feng, M. & Holonyak, N., Jan 1 2014, In : Applied Physics Letters. 104, 8, 81117.

Research output: Contribution to journalArticle

transistors
life (durability)
frequency response
lasers
minority carriers

Low power operation of a vertical cavity transistor laser via the reduction of collector offset voltage

Wu, M. K., Liu, M., Bambery, R., Feng, M. & Holonyak, N., May 15 2014, In : IEEE Photonics Technology Letters. 26, 10, p. 1003-1006 4 p., 6777534.

Research output: Contribution to journalArticle

accumulators
Transistors
emitters
transistors
cavities

Transistor laser with 13.5-Gb/s error-free data transmission

Tan, F., Bambery, R., Feng, M. & Holonyak, N., Aug 1 2014, In : IEEE Photonics Technology Letters. 26, 15, p. 1542-1545 4 p., 6827167.

Research output: Contribution to journalArticle

variable cycle engines
data transmission
Data communication systems
Transistors
transistors
2013

50Th anniversary of the light-emitting diode (led): An ultimate lamp [scanning the issue]

Craford, M. G., Dupuis, R. D., Feng, M., Kish, F. A. & Laskar, J., Sep 30 2013, In : Proceedings of the IEEE. 101, 10, p. 2154-2157 4 p., 6600904.

Research output: Contribution to journalArticle

Electric lamps
Light emitting diodes
Scanning
Industry

Composition-graded AlInP/AlGaAsSb/InP type-II DHBTs with f T/fMAX = 450/510GHz

Xu, H., Iverson, E. W., Liao, C. C., Cheng, K. Y. & Feng, M., Jan 1 2013, In : IEEE Electron Device Letters. 34, 1, p. 33-35 3 p., 6361454.

Research output: Contribution to journalArticle

Heterojunction bipolar transistors
Chemical analysis
Molecular beam epitaxy
Electric fields
5,5'-dihydroxy-4,4'-bitryptamine

Lateral feeding design and selective oxidation process in vertical cavity transistor laser

Liu, M., Wu, M. K., Feng, M. & Holonyak, N., Oct 28 2013, In : Journal of Applied Physics. 114, 16, 163104.

Research output: Contribution to journalArticle

transistors
oxidation
cavities
thresholds
lasers

Relative intensity noise in high speed microcavity laser

Tan, F., Wu, M. K., Liu, M., Feng, M. & Holonyak, N., Oct 21 2013, In : Applied Physics Letters. 103, 14, 141116.

Research output: Contribution to journalArticle

noise intensity
thermal noise
high speed
surface emitting lasers
cavities

Selective oxidization cavity confinement for low threshold vertical cavity transistor laser

Wu, M. K., Liu, M., Tan, F., Feng, M. & Holonyak, N., Jul 1 2013, In : Applied Physics Letters. 103, 1, 011104.

Research output: Contribution to journalArticle

transistors
variable cycle engines
cavities
thresholds
lasers

The effect of ground and first excited state transitions on transistor laser relative intensity noise

Tan, F., Xu, W., Huang, X., Feng, M. & Holonyak, N., Feb 25 2013, In : Applied Physics Letters. 102, 8, 081103.

Research output: Contribution to journalArticle

noise intensity
transistors
excitation
lasers
noise measurement

The transistor laser: Theory and experiment

Then, H. W., Feng, M. & Holonyak, N., Sep 2 2013, In : Proceedings of the IEEE. 101, 10, p. 2271-2298 28 p., 6587527.

Research output: Contribution to journalArticle

Laser theory
Transistors
Lasers
Semiconductor quantum wells
Experiments

Voltage and current modulation at 20 Gb/s of a transistor laser at room temperature

Bambery, R., Tan, F., Feng, M., Dallesasse, J. M. & Holonyak, N., May 3 2013, In : IEEE Photonics Technology Letters. 25, 9, p. 859-862 4 p., 6480788.

Research output: Contribution to journalArticle

Transistors
transistors
Modulation
modulation
Lasers
2012

Physical origins of nonlinearity in InP double heterojunction bipolar transistors

Xu, H., Iverson, E. W., Cheng, K. Y. & Feng, M., Mar 12 2012, In : Applied Physics Letters. 100, 11, 113508.

Research output: Contribution to journalArticle

bipolar transistors
heterojunctions
nonlinearity
energy bands
alignment

Relative intensity noise of a quantum well transistor laser

Tan, F., Bambery, R., Feng, M. & Holonyak, N., Oct 8 2012, In : Applied Physics Letters. 101, 15, 151118.

Research output: Contribution to journalArticle

noise intensity
transistors
quantum wells
lasers
shot noise

Surface emission vertical cavity transistor laser

Wu, M. K., Feng, M. & Holonyak, N., Jul 23 2012, In : IEEE Photonics Technology Letters. 24, 15, p. 1346-1348 3 p., 6214571.

Research output: Contribution to journalArticle

Transistors
transistors
cavities
Lasers
lasers

Transistor laser optical and electrical linearity enhancement with collector current feedback

Then, H. W., Tan, F., Feng, M. & Holonyak, N., May 28 2012, In : Applied Physics Letters. 100, 22, 221104.

Research output: Contribution to journalArticle

accumulators
linearity
transistors
augmentation
quantum wells

Transistor laser power stabilization using direct collector current feedback control

Iverson, E. W. & Feng, M., Jan 1 2012, In : IEEE Photonics Technology Letters. 24, 1, p. 4-6 3 p., 6043864.

Research output: Contribution to journalArticle

Electric current control
feedback control
accumulators
Feedback control
Transistors

Voltage modulation of a vertical cavity transistor laser via intra-cavity photon-assisted tunneling

Wu, M. K., Feng, M. & Holonyak, N., Aug 20 2012, In : Applied Physics Letters. 101, 8, 081102.

Research output: Contribution to journalArticle

accumulators
transistors
modulation
cavities
photons
2011
power efficiency
power amplifiers
Power amplifiers
Inductance
CMOS

Bandfilling and photon-assisted tunneling in a quantum-well transistor laser

Feng, M., Bambery, R. & Holonyak, N., Mar 21 2011, In : Applied Physics Letters. 98, 12, 123505.

Research output: Contribution to journalArticle

accumulators
transistors
quantum wells
photons
lasers

Base charge accumulation and push-out effects on nonlinearity of Type-I InP/InGaAs/InP and Type-I/II AlInP/GaAsSb/InP double heterojunction bipolar transistors

Cheng, K. Y., Xu, H., Stuenkel, M. E., Iverson, E. W., Liao, C. C., Yang, K. W., Feng, M. & Cheng, K. Y., Dec 1 2011, In : Journal of Applied Physics. 110, 11, 113703.

Research output: Contribution to journalArticle

bipolar transistors
accumulators
heterojunctions
nonlinearity
alignment

Doping-dependent device functionality of InP/InAlGaAs long-wavelength light-emitting transistors

Huang, Y., Ryou, J. H., Dupuis, R. D., Dixon, F., Feng, M., Holonyak, N. & Kuciauskas, D., Sep 5 2011, In : Applied Physics Letters. 99, 10, 103502.

Research output: Contribution to journalArticle

transistors
wavelengths
zinc
quantum wells
carrier lifetime

Energy efficient microcavity lasers with 20 and 40 Gb/s data transmission

Tan, F., Wu, C. H., Feng, M. & Holonyak, N., May 9 2011, In : Applied Physics Letters. 98, 19, 191107.

Research output: Contribution to journalArticle

data transmission
surface emitting lasers
apertures
bandwidth
photon density

Hot electron injection effect on the microwave performance of type-I/II AlInP/GaAsSb/InP double-heterojunction bipolar transistors

Cheng, K. Y. D., Liao, C. C., Xu, H., Cheng, K. Y. N. & Feng, M., Jun 13 2011, In : Applied Physics Letters. 98, 24, 242103.

Research output: Contribution to journalArticle

bipolar transistors
hot electrons
heterojunctions
emitters
injection

InP/InAlGaAs light-emitting transistors and transistor lasers with a carbon-doped base layer

Huang, Y., Ryou, J. H., Dupuis, R. D., Dixon, F., Feng, M. & Holonyak, N., Mar 15 2011, In : Journal of Applied Physics. 109, 6, 063106.

Research output: Contribution to journalArticle

transistors
carbon
lasers
threshold currents
carbon lasers

Temperature dependence of a high-performance narrow-stripe (1 μm) single quantum-well transistor laser

Feng, M., Holonyak, N. & James, A., Jan 31 2011, In : Applied Physics Letters. 98, 5, 051107.

Research output: Contribution to journalArticle

transistors
quantum wells
temperature dependence
radiative recombination
confining

The effect of microcavity laser recombination lifetime on microwave bandwidth and eye-diagram signal integrity

Wu, C. H., Tan, F., Wu, M. K., Feng, M. & Holonyak, N., Mar 1 2011, In : Journal of Applied Physics. 109, 5, 053112.

Research output: Contribution to journalArticle

integrity
diagrams
bandwidth
modulation
microwaves

The Metamorphosis of the Transistor into a Laser

Feng, M. & Holonyak, N., Mar 2011, Optics and Photonics News, 22, 3, p. 45-49 5 p.

Research output: Contribution to specialist publicationArticle

Transistors
transistors
Lasers
lasers
optical communication

Transistor laser with simultaneous electrical and optical output at 20 and 40 Gb/s data rate modulation

Tan, F., Bambery, R., Feng, M. & Holonyak, N., Aug 8 2011, In : Applied Physics Letters. 99, 6, 061105.

Research output: Contribution to journalArticle

transistors
modulation
output
laser cavities
lasers
2010

Design and operation of distributed feedback transistor lasers

Dixon, F., Feng, M. & Holonyak, N., Nov 1 2010, In : Journal of Applied Physics. 108, 9, 093109.

Research output: Contribution to journalArticle

transistors
lasers
continuous wave lasers
bipolar transistors
threshold currents

Distributed feedback transistor laser

Dixon, F., Feng, M. & Holonyak, N., Jun 14 2010, In : Applied Physics Letters. 96, 24, 241103.

Research output: Contribution to journalArticle

transistors
continuous wave lasers
bipolar transistors
threshold currents
confining

Drifting-dipole noise (DDN) model of MOSFETs for microwave circuit design

Nguyen, G. D. & Feng, M., Dec 1 2010, In : IEEE Transactions on Microwave Theory and Techniques. 58, 12 PART 1, p. 3433-3443 11 p., 5595520.

Research output: Contribution to journalArticle

Microwave circuits
microwave circuits
field effect transistors
dipoles
Carrier mobility

Microwave characterization of Purcell enhancement in a microcavity laser

Then, H. W., Wu, C. H., Feng, M. & Holonyak, N., Apr 12 2010, In : Applied Physics Letters. 96, 13, 131107.

Research output: Contribution to journalArticle

microwaves
augmentation
output
surface emitting lasers
frequency response

Microwave circuit model of the three-port transistor laser

Then, H. W., Feng, M. & Holonyak, N., May 1 2010, In : Journal of Applied Physics. 107, 9, 094509.

Research output: Contribution to journalArticle

microwave circuits
transistors
lasers
Kirchhoff law
quantum wells