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2020

850-nm Single-Mode Vertical-Cavity Surface-Emitting Lasers for 40 Gb/s Error-Free Transmission up to 500 m in OM4 Fiber

Peng, C. Y., Qiu, J., Huang, T. Y., Wu, C. H., Feng, M. & Wu, C. H., Jan 2020, In : IEEE Electron Device Letters. 41, 1, p. 84-86 3 p., 8901217.

Research output: Contribution to journalArticle

Comparison of High-Speed PAM4 and QAM-OFDM Data Transmission Using Single-Mode VCSEL in OM5 and OM4 MMF Links

Huang, C. Y., Wang, H. Y., Wu, C. H., Cheng, C. H., Tsai, C. T., Wu, C. H., Feng, M. & Lin, G. R., Jul 1 2020, In : IEEE Journal of Selected Topics in Quantum Electronics. 26, 4, 8662674.

Research output: Contribution to journalArticle

Comparison on OM5-MMF and OM4-MMF Data Links with 32-GBaud PAM-4 Modulated Few-Mode VCSEL at 850 nm

Huang, C. Y., Wang, H. Y., Wu, C. H., Lo, W. C., Tsai, C. T., Wu, C. H., Feng, M. & Lin, G. R., Feb 1 2020, In : Journal of Lightwave Technology. 38, 3, p. 573-582 10 p., 8839077.

Research output: Contribution to journalArticle

2019
2018

Direct and photon-assisted tunneling in resonant-cavity quantum-well light-emitting transistors

Qiu, J., Wang, C. Y., Feng, M. & Holonyak, N., Dec 21 2018, In : Journal of Applied Physics. 124, 23, 234501.

Research output: Contribution to journalArticle

Oxide-Confined VCSELs for High-Speed Optical Interconnects

Feng, M., Wu, C. H. & Holonyak, N., Jun 2018, In : IEEE Journal of Quantum Electronics. 54, 3, 8319410.

Research output: Contribution to journalArticle

Tunneling Modulation of Transistor Lasers: Theory and Experiment

Feng, M., Qiu, J. & Holonyak, N., Apr 2018, In : IEEE Journal of Quantum Electronics. 54, 2, 2000514.

Research output: Contribution to journalArticle

2017

Electro-optical hysteresis and bistability in the ring-cavity tunneling-collector transistor laser

Feng, M., Holonyak, N., Wu, M. K. & Tan, F., Apr 21 2017, In : Journal of Applied Physics. 121, 15, 153103.

Research output: Contribution to journalArticle

High-speed visible light communication using GaN-based light-emitting diodes with photonic crystals

Yin, Y. F., Lan, W. Y., Lin, T. C., Wang, C., Feng, M. & Huang, J. J., Jan 15 2017, In : Journal of Lightwave Technology. 35, 2, p. 258-264 7 p., 7762808.

Research output: Contribution to journalArticle

Resonance-free optical response of a vertical cavity transistor laser

Feng, M., Wu, C. H., Wu, M. K., Wu, C. H. & Holonyak, N., Sep 18 2017, In : Applied Physics Letters. 111, 12, 121106.

Research output: Contribution to journalArticle

Room temperature operation of electro-optical bistability in the edge-emitting tunneling-collector transistor laser

Feng, M., Holonyak, N. & Wang, C. Y., Sep 14 2017, In : Journal of Applied Physics. 122, 10, 103102.

Research output: Contribution to journalArticle

2016

Intra-cavity photon-assisted tunneling collector-base voltage-mediated electron-hole spontaneous-stimulated recombination transistor laser

Feng, M., Qiu, J., Wang, C. Y. & Holonyak, N., Feb 28 2016, In : Journal of Applied Physics. 119, 8, 084502.

Research output: Contribution to journalArticle

Microwave extraction method of radiative recombination and photon lifetimes up to 85 °C on 50 Gb/s oxide-vertical cavity surface emitting laser

Wang, C. Y., Liu, M., Feng, M. & Holonyak, N., Dec 14 2016, In : Journal of Applied Physics. 120, 22, 223103.

Research output: Contribution to journalArticle

Tunneling modulation of a quantum-well transistor laser

Feng, M., Qiu, J., Wang, C. Y. & Holonyak, N., Nov 28 2016, In : Journal of Applied Physics. 120, 20, 204501.

Research output: Contribution to journalArticle

2015

Metamorphosis of the transistor into a laser

Feng, M. & Holonyak, N., Jan 1 2015, In : EPL. 109, 1

Research output: Contribution to journalArticle

Optical pulse generation in a transistor laser via intra-cavity photon-assisted tunneling and excess base carrier redistribution

Feng, M., Iverson, E. W., Wang, C. Y. & Holonyak, N., Nov 2 2015, In : Applied Physics Letters. 107, 18, 181108.

Research output: Contribution to journalArticle

Single quantum-well transistor lasers operating error-free at 22 Gb/s

Bambery, R., Wang, C. Y., Tan, F., Feng, M. & Holonyak, N., Mar 15 2015, In : IEEE Photonics Technology Letters. 27, 6, p. 600-603 4 p., 7004784.

Research output: Contribution to journalArticle

2014

0.5 THz performance of a type-II DHBT with a doping-graded and constant-composition GaAsSb base

Xu, H., Wu, B., Iverson, E. W., Low, T. S. & Feng, M., Jan 1 2014, In : IEEE Electron Device Letters. 35, 1, p. 24-26 3 p., 6678780.

Research output: Contribution to journalArticle

780 nm oxide-confined VCSEL with 13.5 Gb/s error-free data transmission

Liu, M., Wu, M. K., Tan, F., Bambery, R., Feng, M. & Holonyak, N., Apr 1 2014, In : IEEE Photonics Technology Letters. 26, 7, p. 702-705 4 p., 6728712.

Research output: Contribution to journalArticle

850 nm oxide-VCSEL with low relative intensity noise and 40 Gb/s error free data transmission

Tan, F., Wu, M. K., Liu, M., Feng, M. & Holonyak, N., Feb 1 2014, In : IEEE Photonics Technology Letters. 26, 3, p. 289-292 4 p., 6589110.

Research output: Contribution to journalArticle

Effect of the energy barrier in the base of the transistor laser on the recombination lifetime

Bambery, R., Wang, C., Dallesasse, J. M., Feng, M. & Holonyak, N., Jan 1 2014, In : Applied Physics Letters. 104, 8, 081117.

Research output: Contribution to journalArticle

Low power operation of a vertical cavity transistor laser via the reduction of collector offset voltage

Wu, M. K., Liu, M., Bambery, R., Feng, M. & Holonyak, N., May 15 2014, In : IEEE Photonics Technology Letters. 26, 10, p. 1003-1006 4 p., 6777534.

Research output: Contribution to journalArticle

Transistor laser with 13.5-Gb/s error-free data transmission

Tan, F., Bambery, R., Feng, M. & Holonyak, N., Aug 1 2014, In : IEEE Photonics Technology Letters. 26, 15, p. 1542-1545 4 p., 6827167.

Research output: Contribution to journalArticle

2013

50Th anniversary of the light-emitting diode (led): An ultimate lamp [scanning the issue]

Craford, M. G., Dupuis, R. D., Feng, M., Kish, F. A. & Laskar, J., Jan 1 2013, In : Proceedings of the IEEE. 101, 10, p. 2154-2157 4 p., 6600904.

Research output: Contribution to journalArticle

Composition-graded AlInP/AlGaAsSb/InP type-II DHBTs with f T/fMAX = 450/510GHz

Xu, H., Iverson, E. W., Liao, C. C., Cheng, K. Y. & Feng, M., Jan 1 2013, In : IEEE Electron Device Letters. 34, 1, p. 33-35 3 p., 6361454.

Research output: Contribution to journalArticle

Lateral feeding design and selective oxidation process in vertical cavity transistor laser

Liu, M., Wu, M. K., Feng, M. & Holonyak, N., Oct 28 2013, In : Journal of Applied Physics. 114, 16, 163104.

Research output: Contribution to journalArticle

Relative intensity noise in high speed microcavity laser

Tan, F., Wu, M. K., Liu, M., Feng, M. & Holonyak, N., Oct 21 2013, In : Applied Physics Letters. 103, 14, 141116.

Research output: Contribution to journalArticle

Selective oxidization cavity confinement for low threshold vertical cavity transistor laser

Wu, M. K., Liu, M., Tan, F., Feng, M. & Holonyak, N., Jul 1 2013, In : Applied Physics Letters. 103, 1, 011104.

Research output: Contribution to journalArticle

The effect of ground and first excited state transitions on transistor laser relative intensity noise

Tan, F., Xu, W., Huang, X., Feng, M. & Holonyak, N., Feb 25 2013, In : Applied Physics Letters. 102, 8, 081103.

Research output: Contribution to journalArticle

The transistor laser: Theory and experiment

Then, H. W., Feng, M. & Holonyak, N., Jan 1 2013, In : Proceedings of the IEEE. 101, 10, p. 2271-2298 28 p., 6587527.

Research output: Contribution to journalArticle

Voltage and current modulation at 20 Gb/s of a transistor laser at room temperature

Bambery, R., Tan, F., Feng, M., Dallesasse, J. M. & Holonyak, N., May 3 2013, In : IEEE Photonics Technology Letters. 25, 9, p. 859-862 4 p., 6480788.

Research output: Contribution to journalArticle

2012

Physical origins of nonlinearity in InP double heterojunction bipolar transistors

Xu, H., Iverson, E. W., Cheng, K. Y. & Feng, M., Mar 12 2012, In : Applied Physics Letters. 100, 11, 113508.

Research output: Contribution to journalArticle

Relative intensity noise of a quantum well transistor laser

Tan, F., Bambery, R., Feng, M. & Holonyak, N., Oct 8 2012, In : Applied Physics Letters. 101, 15, 151118.

Research output: Contribution to journalArticle

Surface emission vertical cavity transistor laser

Wu, M. K., Feng, M. & Holonyak, N., Jul 23 2012, In : IEEE Photonics Technology Letters. 24, 15, p. 1346-1348 3 p., 6214571.

Research output: Contribution to journalArticle

Transistor laser optical and electrical linearity enhancement with collector current feedback

Then, H. W., Tan, F., Feng, M. & Holonyak, N., May 28 2012, In : Applied Physics Letters. 100, 22, 221104.

Research output: Contribution to journalArticle

Transistor laser power stabilization using direct collector current feedback control

Iverson, E. W. & Feng, M., Jan 1 2012, In : IEEE Photonics Technology Letters. 24, 1, p. 4-6 3 p., 6043864.

Research output: Contribution to journalArticle

Voltage modulation of a vertical cavity transistor laser via intra-cavity photon-assisted tunneling

Wu, M. K., Feng, M. & Holonyak, N., Aug 20 2012, In : Applied Physics Letters. 101, 8, 081102.

Research output: Contribution to journalArticle

2011

Bandfilling and photon-assisted tunneling in a quantum-well transistor laser

Feng, M., Bambery, R. & Holonyak, N., Mar 21 2011, In : Applied Physics Letters. 98, 12, 123505.

Research output: Contribution to journalArticle

Base charge accumulation and push-out effects on nonlinearity of Type-I InP/InGaAs/InP and Type-I/II AlInP/GaAsSb/InP double heterojunction bipolar transistors

Cheng, K. Y., Xu, H., Stuenkel, M. E., Iverson, E. W., Liao, C. C., Yang, K. W., Feng, M. & Cheng, K. Y., Dec 1 2011, In : Journal of Applied Physics. 110, 11, 113703.

Research output: Contribution to journalArticle

Doping-dependent device functionality of InP/InAlGaAs long-wavelength light-emitting transistors

Huang, Y., Ryou, J. H., Dupuis, R. D., Dixon, F., Feng, M., Holonyak, N. & Kuciauskas, D., Sep 5 2011, In : Applied Physics Letters. 99, 10, 103502.

Research output: Contribution to journalArticle

Energy efficient microcavity lasers with 20 and 40 Gb/s data transmission

Tan, F., Wu, C. H., Feng, M. & Holonyak, N., May 9 2011, In : Applied Physics Letters. 98, 19, 191107.

Research output: Contribution to journalArticle

Hot electron injection effect on the microwave performance of type-I/II AlInP/GaAsSb/InP double-heterojunction bipolar transistors

Cheng, K. Y. D., Liao, C. C., Xu, H., Cheng, K. Y. N. & Feng, M., Jun 13 2011, In : Applied Physics Letters. 98, 24, 242103.

Research output: Contribution to journalArticle

InP/InAlGaAs light-emitting transistors and transistor lasers with a carbon-doped base layer

Huang, Y., Ryou, J. H., Dupuis, R. D., Dixon, F., Feng, M. & Holonyak, N., Mar 15 2011, In : Journal of Applied Physics. 109, 6, 063106.

Research output: Contribution to journalArticle

Temperature dependence of a high-performance narrow-stripe (1 μm) single quantum-well transistor laser

Feng, M., Holonyak, N. & James, A., Jan 31 2011, In : Applied Physics Letters. 98, 5, 051107.

Research output: Contribution to journalArticle

The effect of microcavity laser recombination lifetime on microwave bandwidth and eye-diagram signal integrity

Wu, C. H., Tan, F., Wu, M. K., Feng, M. & Holonyak, N., Mar 1 2011, In : Journal of Applied Physics. 109, 5, 053112.

Research output: Contribution to journalArticle

The Metamorphosis of the Transistor into a Laser

Feng, M. & Holonyak, N., Mar 2011, Optics and Photonics News, 22, 3, p. 45-49 5 p.

Research output: Contribution to specialist publicationArticle

Transistor laser with simultaneous electrical and optical output at 20 and 40 Gb/s data rate modulation

Tan, F., Bambery, R., Feng, M. & Holonyak, N., Aug 8 2011, In : Applied Physics Letters. 99, 6, 061105.

Research output: Contribution to journalArticle

2010

Design and operation of distributed feedback transistor lasers

Dixon, F., Feng, M. & Holonyak, N., Nov 1 2010, In : Journal of Applied Physics. 108, 9, 093109.

Research output: Contribution to journalArticle

Distributed feedback transistor laser

Dixon, F., Feng, M. & Holonyak, N., Jun 14 2010, In : Applied Physics Letters. 96, 24, 241103.

Research output: Contribution to journalArticle