Keyphrases
Transistor Laser
67%
Ion Implantation
53%
Gallium Arsenide
51%
InGaAs
45%
Vertical-cavity Surface-emitting Laser (VCSEL)
44%
GaAs MESFET
36%
MESFET
36%
Quantum Well
34%
Heterojunction Bipolar Transistors
30%
Light-emitting Transistors
25%
Base Region
21%
Transistor
20%
InGaP
18%
GaAsSb
18%
Oxide VCSEL
17%
Noise Figure
16%
Metal-organic Chemical Vapor Deposition (MOCVD)
16%
Fmax
16%
Gate Length
16%
GaAs Substrate
15%
Annealing
15%
Quantum Well Infrared Photodetector
14%
Associated Gain
13%
Room Temperature
12%
InP HBT
12%
Low Noise
12%
850 Nm VCSEL
12%
4-level Pulse Amplitude Modulation (PAM-4)
12%
Heterojunction
12%
Double Heterojunction Bipolar Transistor
12%
Semiconductors
12%
Recombination
11%
Reliable Data Transmission
11%
High Performance
11%
Temperature Effect
10%
Error-free Transmission
10%
Photon-assisted Tunneling
10%
Current Gain Cutoff Frequency
10%
Modulation Bandwidth
10%
Noise Performance
10%
Recombination Lifetime
10%
Single Heterojunction Bipolar Transistor
9%
Low Power
9%
3-dB Bandwidth
9%
Submicron
9%
Electrical Signal
9%
Cut-off Frequency
9%
Light-emitting
9%
Oxides
9%
Optical Output
8%
Engineering
Gallium Arsenide
100%
Heterojunctions
68%
Bipolar Transistor
54%
Indium Gallium Arsenide
49%
Quantum Well
47%
Emitting Light
32%
Current Gain
28%
Cutoff Frequency
20%
Emitting Laser
20%
Base Region
20%
Cavity Surface
20%
Field-Effect Transistor
19%
Noise Figure
18%
Gate Length
15%
Gaas Substrate
15%
Integrated Optoelectronics
14%
Amplifier
13%
Recombination Lifetime
13%
Tunnel Construction
13%
Room Temperature
13%
Photodetector
13%
Aluminium Gallium Arsenide
12%
Photometer
12%
Electrical Signal
11%
Monolithic Microwave Integrated Circuits
11%
Field Effect Transistor
11%
Data Rate
11%
Ion Implantation
10%
Current Threshold
10%
Millimeter Wave
9%
Chemical Vapor Deposition
9%
Vapor Deposition
9%
Light Emission
9%
Noise Performance
9%
Output Power
8%
Optical Bandwidth
8%
Photodiode
8%
Device Performance
8%
Current Collector
8%
Optical Link
7%
Data Link
7%
Base Layer
6%
Integrated Circuit
6%
Scattering Parameters
6%
Microelectromechanical System
6%
Low Noise Amplifier
6%
Ka-Band
6%
Stimulated Emission
6%
Tunnel
6%
Fiber Link
6%
