Keyphrases
Transistor Laser
66%
Ion Implantation
53%
Gallium Arsenide
50%
InGaAs
45%
Vertical-cavity Surface-emitting Laser (VCSEL)
42%
GaAs MESFET
36%
MESFET
36%
Quantum Well
33%
Heterojunction Bipolar Transistors
30%
Light-emitting Transistors
24%
Base Region
20%
Transistor
19%
InGaP
18%
GaAsSb
18%
Noise Figure
16%
Metal-organic Chemical Vapor Deposition (MOCVD)
16%
Fmax
16%
Oxide VCSEL
16%
Gate Length
15%
GaAs Substrate
15%
Annealing
15%
Quantum Well Infrared Photodetector
14%
Associated Gain
13%
InP HBT
12%
Low Noise
12%
850 Nm VCSEL
12%
Room Temperature
12%
Heterojunction
12%
Double Heterojunction Bipolar Transistor
12%
Semiconductors
11%
Recombination
11%
Reliable Data Transmission
11%
4-level Pulse Amplitude Modulation (PAM-4)
10%
High Performance
10%
Temperature Effect
10%
Error-free Transmission
10%
Photon-assisted Tunneling
10%
Current Gain Cutoff Frequency
10%
Modulation Bandwidth
10%
Noise Performance
10%
Recombination Lifetime
9%
Single Heterojunction Bipolar Transistor
9%
Low Power
9%
3-dB Bandwidth
9%
Submicron
9%
Electrical Signal
9%
Cut-off Frequency
9%
Light-emitting
9%
Oxides
8%
Optical Output
8%
Engineering
Gallium Arsenide
100%
Heterojunctions
69%
Bipolar Transistor
53%
Indium Gallium Arsenide
48%
Quantum Well
46%
Emitting Light
31%
Transmissions
29%
Current Gain
28%
Photodetector
23%
Cutoff Frequency
20%
Base Region
20%
Emitting Laser
19%
Field-Effect Transistor
19%
Cavity Surface
19%
Noise Figure
18%
Gate Length
15%
Gaas Substrate
15%
Integrated Optoelectronics
14%
Tunnel Construction
13%
Amplifier
13%
Recombination Lifetime
13%
Room Temperature
12%
Aluminium Gallium Arsenide
12%
Field Effect Transistor
11%
Electrical Signal
11%
Monolithic Microwave Integrated Circuits
11%
Ion Implantation
10%
Data Rate
9%
Chemical Vapor Deposition
9%
Vapor Deposition
9%
Current Threshold
9%
Millimeter Wave
9%
Light Emission
9%
Energy Engineering
9%
Noise Performance
9%
Photodiode
9%
Output Power
8%
Device Performance
7%
Current Collector
7%
Optical Link
7%
Optical Bandwidth
7%
Scattering Parameters
7%
Base Layer
6%
Integrated Circuit
6%
Data Link
6%
Microelectromechanical System
6%
Low Noise Amplifier
6%
Ka-Band
6%
Limitations
6%
Responsivity
6%