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Research Output 1971 2019

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Paper
2019

Analysis of high Mg-incorporation into GaN via PAMBE modulation doping and molecular dynamics simulations

Ismail, F. H., Landi, M., Kelly, F. P. & Kim, K., Jan 1 2019.

Research output: Contribution to conferencePaper

Molecular dynamics
Doping (additives)
Modulation
Computer simulation
Secondary ion mass spectrometry

Development of GaN vertical high-power devices enabled by plasma-assisted molecular beam epitaxy

Kelly, F. P., Vesto, R. E., Sarker, P., Ismail, F. H. & Kim, K., Jan 1 2019.

Research output: Contribution to conferencePaper

Reactive ion etching
Power electronics
Molecular beam epitaxy
Doping (additives)
Plasmas

GaN high-performance low-leakage p-Islet MPS diodes enabled by PAMBE-based selective area growth

Sarker, P., Kelly, F. P., Vesto, R. E., Ismail, F. H. & Kim, K., Jan 1 2019.

Research output: Contribution to conferencePaper

Diodes
Defects
Reactive ion etching
Ion implantation
Leakage currents