Joseph W Lyding

Sengupta, D. K., Malin, J. L., Jackson, S. I., Fang, W., Wu, W., Kuo, H. C., Rowe, C., Chuang, S. L., Hsieh, K. C., Tucker, J. R., Lyding, J. W., Feng, M., Stillman, G. E. & Liu, H. C., Dec 1 1996, In : Materials Research Society Symposium - Proceedings. 421, p. 203-208 6 p.

Research output: Contribution to journal › Conference article

Quantum well infrared photodetectors

quantum well infrared photodetectors

Molecular beams

molecular beams

Gases

Depth dependence of dopant induced features on the Si(100)2×1:H surface and its application for three dimensional dopant profiling

Liu, L., Yu, J. & Lyding, J. W., Jan 1 2002, In : Materials Research Society Symposium - Proceedings. 699, p. 207-211 5 p.

Research output: Contribution to journal › Conference article

scanning tunneling microscopy

Doping (additives)

Scanning tunneling microscopy

arsenic

ultrahigh vacuum

Deuterium process of CMOS devices: New phenomena and dramatic improvement

Chen, Z., Lee, J., Lyding, J. W. & Hess, K., Jan 1 1998, In : Digest of Technical Papers - Symposium on VLSI Technology. p. 180-181 2 p.

Research output: Contribution to journal › Conference article

Deuterium

Degradation

Electric potential

Temperature

Effects of gallium arsenide passivation on scanning tunneling microscope excited luminescence

Reuter, E. E., Gu, S. Q., Bohn, P. W., Dorsten, J. F., Abeln, G. C., Lyding, J. W. & Bishop, S. G., Dec 1 1995, In : Materials Research Society Symposium - Proceedings. 380, p. 119-124 6 p.

Research output: Contribution to journal › Conference article

Gallium arsenide

Passivation

passivity

gallium

Luminescence

ENFORCED SEGREGATED STACKING IN METALLOMACROCYCLIC 'METALS. ' NEW INFORMATION ON PHTHALOCYANINE DONOR-ACCEPTOR INTERACTIONS.

Inabe, T., Kannewurf, C. R., Lyding, J. W., Moguel, M. K. & Marks, T. J., Jan 1 1982, In : Molecular crystals and liquid crystals. 93, 1-4, p. 355-367 13 p.

Research output: Contribution to journal › Conference article

Metals

Doping (additives)

brackets

Optical conductivity

conductivity

Fundamental connection between hydrogen/deuterium desorption at silicon surfaces in ultrahigh vacuum and at oxide/silicon interfaces in metal-oxide-semiconductor devices

Cheng, K., Lee, J., Chen, Z., Shah, S. A., Hess, K., Leburton, J. P. & Lyding, J. W., Jul 1 2001, In : Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19, 4, p. 1119-1123 5 p.

Research output: Contribution to journal › Conference article

MOS devices

Silicon oxides

Ultrahigh vacuum

Deuterium

silicon oxides

High-performance chip reliability from short-time-tests Statistical models for optical interconnect and HCl/TDDB/NBTI deep-submicron transistor failures

Haggag, A., McMahon, W., Hess, K., Cheng, K., Lee, J. & Lyding, J., Jan 1 2001, In : Annual Proceedings - Reliability Physics (Symposium). p. 271-279 9 p.

Research output: Contribution to journal › Conference article

Optical interconnects

Transistors

Degradation

Defects

Bragg gratings

Hydrogen-related extrinsic oxide trap generation in thin gate oxide film during negative-bias temperature instability stress

Lee, J. S., Lyding, J. W. & Hess, K., Jul 12 2004, In : Annual Proceedings - Reliability Physics (Symposium). p. 685-686 2 p.

Research output: Contribution to journal › Conference article

Oxide films

Deuterium

Hydrogen

Oxides

Annealing

Hydrogen-related extrinsic oxide trap generation in thin gate oxide film during negative-bias temperature instability stress

Lee, J. S., Lyding, J. W. & Hess, K., Jan 1 2004, In : IEEE International Reliability Physics Symposium Proceedings. 2004-January, January, p. 685-686 2 p., 1315451.

Research output: Contribution to journal › Conference article

Oxide films

Deuterium

Hydrogen

Oxides

Annealing

Implications of atomic-level manipulation on the Si(100) surface: From enhanced CMOS reliability to molecular nanoelectronics

Hersam, M. C., Lee, J., Guisinger, N. P. & Lyding, J. W., May 2000, In : Superlattices and Microstructures. 27, 5, p. 583-591 9 p.

Research output: Contribution to journal › Conference article

Nanoelectronics

manipulators

Desorption

CMOS

Metals

Interface characterization in an InP/InGaAs resonant tunneling diode by scanning tunneling microscopy

Skala, S. L., Wu, W., Tucker, J. R., Lyding, J. W., Seabaugh, A., Beam, E. A. & Jovanovic, D., Mar 1 1995, In : Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 13, 2, p. 660-663 4 p.

Research output: Contribution to journal › Conference article

Resonant tunneling diodes

resonant tunneling diodes

Scanning tunneling microscopy

scanning tunneling microscopy

Surface roughness

Isolating, imaging, and electrically characterizing individual organic molecules on the Si(100) surface with the scanning tunneling microscope

Hersam, M. C., Guisinger, N. P. & Lyding, J. W., Jul 1 2000, In : Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 18, 4 I, p. 1349-1353 5 p.

Research output: Contribution to journal › Conference article

Microscopes

microscopes

Scanning

Imaging techniques

Molecules

Manufacturing multi-level metal CMOS with deuterium for improved hot carrier reliability

Kizilyalli, I. C., Abeln, G., Chen, Z., Weber, G., Register, F., Harris, E., Chetlur, S., Higashi, G., Schofieled, M., Sen, S., Kotzias, B., Roy, P. K., Lyding, J. & Hess, K., Dec 1 1998, In : Proceedings of SPIE - The International Society for Optical Engineering. 3506, p. 141-146 6 p.

Research output: Contribution to journal › Conference article

Hot carriers

Deuterium

deuterium

CMOS

manufacturing

Scanning tunneling microscope-based nanolithography for electronic device fabrication

Lyding, J. W., Brockenbrough, R. T., Fay, P. J., Tucker, J. R., Hess, K. & Higman, T. K., Oct 3 1993, In : Proceedings of SPIE - The International Society for Optical Engineering. 10310, p. 111-126 16 p., 1031008.

Research output: Contribution to journal › Conference article

Nanolithography

Microscope

Scanning

Fabrication

Microscopes

Scanning tunneling microscopy observation of single dangling bonds on the Si(100)2×1:H surface

Liu, L., Yu, J. & Lyding, J. W., Jan 1 2002, In : Materials Research Society Symposium - Proceedings. 705, p. 187-192 6 p.

Research output: Contribution to journal › Conference article

Dangling bonds

Scanning tunneling microscopy

scanning tunneling microscopy

ultrahigh vacuum

lithography

Silicon-based molecular nanotechnology

Hersam, M. C., Guisinger, N. P. & Lyding, J. W., Jun 1 2000, In : Nanotechnology. 11, 2, p. 70-76 7 p.

Research output: Contribution to journal › Conference article

Silicon

nanotechnology

Nanotechnology

Molecules

silicon

Simulation of Si-SiO₂ defect generation in CMOS chips: From atomistic structure to chip failure rates

Hess, K., Haggag, A., McMahon, W., Fischer, B., Cheng, K., Lee, J. & Lyding, J. W., Dec 1 2000, In : Technical Digest - International Electron Devices Meeting. p. 93-95 3 p.

Research output: Contribution to journal › Conference article

CMOS

chips

Degradation

Defects

time dependence

Theory of channel hot-carrier degradation in MOSFETs

Hess, K., Register, L. F., McMahon, W., Tuttle, B., Aktas, O., Ravaioli, U., Lyding, J. W. & Kizilyalli, I. C., Dec 1 1999, In : Physica B: Condensed Matter. 272, 1-4, p. 527-531 5 p.

Research output: Contribution to journal › Conference article

Hot carriers

MOSFET devices

metal oxide semiconductors

field effect transistors

degradation

Ultrahigh vacuum-scanning tunneling microscopy nanofabrication and hydrogen/deuterium desorption from silicon surfaces: Implications for complementary metal oxide semiconductor technology

Lyding, J. W., Hess, K., Abeln, G. C., Thompson, D. S., Moore, J. S., Hersam, M. C., Foley, E. T., Lee, J., Chen, Z., Hwang, S. T., Choi, H., Avouris, P. & Kizilyalli, I. C., Jan 1 1998, In : Applied Surface Science. 130-132, p. 221-230 10 p.

Research output: Contribution to journal › Conference article

Deuterium

Ultrahigh vacuum

Scanning tunneling microscopy

Silicon

Nanotechnology